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Preparation method for single-phase P type cuprous oxide thin film

A technology of cuprous oxide and thin film, which is applied in the field of photocatalytic materials, can solve the problem that it is difficult to obtain a single equality, and achieve the effects of uniform growth, large film forming area and high deposition rate

Inactive Publication Date: 2017-09-05
UNIV OF SHANGHAI FOR SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the influence of various factors, the reported Cu 2 O thin films usually have Cu and CuO components, even if pure Cu 2 O, it is also difficult to obtain single-phase Cu 2 o
[0005] In summary, the current Cu 2 O thin film preparation method, the resulting Cu 2 O thin film will have miscellaneous Cu and CuO components, which will affect its application

Method used

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  • Preparation method for single-phase P type cuprous oxide thin film

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Comparison scheme
Effect test

Embodiment 1

[0024] A method for preparing a single-phase P-type cuprous oxide film, comprising the following steps:

[0025] (1) Cleaning of quartz substrate

[0026] Control the temperature at 0°C, and use pure acetone, absolute ethanol, and deionized water to clean the quartz substrate with ultrasonic waves for 5 minutes in sequence;

[0027] (2) Place the cleaned quartz substrate in step (1) on the coating fixture and fix it;

[0028] (3) Put the copper film material in the graphite crucible, and place the gun baffle of the vacuum coating machine between the quartz substrate and the copper film material;

[0029] The purity of described copper film material is 99.99%;

[0030] (4) Using the vacuum electron beam evaporation method, at room temperature, control the vacuum chamber pressure of the vacuum coating machine to 5.0×10 -4 -7×10 -4 Pa, first pre-evaporate the copper film material for 10 minutes, then adjust the beam current of the vacuum coating machine, deposit a metal copp...

Embodiment 2

[0052] A method for preparing a single-phase P-type cuprous oxide film, comprising the following steps:

[0053] (1) Cleaning of quartz substrate

[0054] Control the temperature at 0°C, and use pure acetone, absolute ethanol, and deionized water to clean the quartz substrate with ultrasonic waves for 10 minutes in sequence;

[0055] (2) Place the cleaned quartz substrate in step (1) on the coating fixture and fix it;

[0056] (3) Put the copper film material in the graphite crucible, and place the gun baffle of the vacuum coating machine between the quartz substrate and the copper film material;

[0057] The purity of described copper film material is 99.99%;

[0058] (4) Using the vacuum electron beam evaporation method, at room temperature, control the vacuum chamber pressure of the vacuum coating machine to 5.0×10 -4 -7×10 -4 Pa, first pre-evaporate the copper film material for 7 minutes, then adjust the beam current of the vacuum coating machine, deposit a metal copp...

Embodiment 3

[0061] A method for preparing a single-phase P-type cuprous oxide film, comprising the following steps:

[0062] (1) Cleaning of quartz substrate

[0063] Control the temperature at 0°C, and use pure acetone, absolute ethanol, and deionized water to perform ultrasonic cleaning on the quartz substrate for 20 minutes;

[0064] (2) Place the cleaned quartz substrate in step (1) on the coating fixture and fix it;

[0065] (3) Put the copper film material in the graphite crucible, and place the gun baffle of the vacuum coating machine between the quartz substrate and the copper film material;

[0066] The purity of described copper film material is 99.99%;

[0067] (4) Using the vacuum electron beam evaporation method, at room temperature, control the vacuum chamber pressure of the vacuum coating machine to 5.0×10 -4 -7×10 -4 Pa, first pre-evaporate the copper film material for 5 minutes, then adjust the beam current of the vacuum coating machine, deposit a metal copper film o...

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Abstract

The invention discloses a preparation method for a single-phase P type cuprous oxide thin film. A washed quartz base is fixed to a film-coating fixture at a room temperature by adopting a vacuum electron beam evaporation method, and a metallic copper thin film is deposited under 5.0 * 10<-4> - 7 * 10<-4> Pa; and then the quartz base deposited with the metallic copper thin film is placed in a muffle furnace, thermal oxidation treatment is conducted in an atmospheric environment, and the single-phase P type cuprous oxide thin film is acquired, wherein the optimized thickness of the thin film is 50-150 nm. According to the preparation method for the single-phase P type cuprous oxide thin film, the vacuum electron beam evaporation method and the precise control of the temperature of the follow-up thermal oxidation treatment are combined together, the cuprous oxide thin film prepared by the preparation method is single phase, high in deposition rate and large in film-forming area, the uniform growth of the thin film is achieved, and the thin film can serve as a photocatalytic oxidizing material with a very high application prospect.

Description

technical field [0001] The invention relates to a preparation method of a single-phase P-type cuprous oxide thin film, belonging to the field of photocatalytic materials. Background technique [0002] With the continuous advancement of global industrialization, environmental pollution, especially water pollution, has become a global problem affecting human survival and sustainable development. At present, the photocatalytic oxidation technology of semiconductor materials has become an important research object in the fields of materials, catalysis and environmental disciplines due to its advantages of low energy consumption, simple operation, relatively mild reaction conditions, and no secondary pollution. [0003] Photocatalytic oxidation technology often uses TiO 2 The representative n-type semiconductor material, TiO 2 With the advantages of high catalytic activity, strong oxidation ability and good stability, it has become the most studied photocatalyst. However, due ...

Claims

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Application Information

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IPC IPC(8): C23C14/30C23C14/18C23C14/58
CPCC23C14/30C23C14/18C23C14/5853
Inventor 洪瑞金王进霞唐礼承黄彬
Owner UNIV OF SHANGHAI FOR SCI & TECH
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