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Flexible single crystal film photoelectric detector and preparation method thereof

A technology for photodetectors and single crystal thin films, applied in chemical instruments and methods, electrical components, single crystal growth, etc., can solve the problems of thin films that cannot be peeled and transferred, form flexible devices, and increase device costs. The effect of control, large film forming area and low manufacturing cost

Pending Publication Date: 2022-04-08
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are still two major problems in the preparation of SnSe and SnTe thin films and device processing: first, the preparation of high-quality single crystal thin film materials often requires expensive equipment, such as molecular beam epitaxy, which greatly increases the cost of devices; second, In the process of forming a flexible device from a thin film, it is often necessary to complete the peeling of the film in an acidic solution and transfer it to the surface of the flexible substrate to complete the processing of the flexible device.
[0005] Chinese patent application 110172735A discloses a magnetron sputtering preparation method of a single crystal SnSe thin film material. This method requires the use of an interface buffer layer to achieve thin film single crystal growth. The process is complicated and the cost is high.
However, the films obtained by them cannot be peeled and transferred to form flexible devices, or need to use acidic solutions such as hydrofluoric acid to complete the film peeling, which does not meet the requirements of green processing technology

Method used

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  • Flexible single crystal film photoelectric detector and preparation method thereof
  • Flexible single crystal film photoelectric detector and preparation method thereof
  • Flexible single crystal film photoelectric detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] The preparation method is as follows:

[0041] The first step, NaCl crystal surface cleaning step

[0042] Select NaCl crystals and purge the surface with dry nitrogen;

[0043] Put the purged NaCl crystal into the tray, put it into the plasma cleaning chamber, and pump the cleaning chamber to a vacuum state of 3Pa, pass in Ar inert gas, adjust the air pressure to one-tenth of the atmospheric pressure, and use the plasma backsputtering technology. Under the conditions of 25°C and a constant 120W backsputtering power, the surface of the NaCl crystal is bombarded with plasma, and the ion bombardment cleaning time is 30 minutes. After the cleaning is completed, take it out;

[0044] The second step, thin film layer surface deposition step

[0045] Transfer the ion-cleaned NaCl crystal into the sputtering chamber, and pump the sputtering chamber to 5×10 -4 Pa high vacuum, adjust the temperature of NaCl crystal to 400°C, adjust the argon gas pressure to 1.0Pa, use DC magn...

Embodiment 2

[0058] The material preparation method and steps are all the same as in Example 1.

[0059] Only in the second step, adjust the film thickness to 5 nm by adjusting the sputtering time.

[0060] Product performance test results:

[0061] After testing, the responsivity value of the prepared flexible single crystal SnSe thin film material to 1550nm laser is 3.1A / W.

Embodiment 3

[0063] The material preparation method and steps are all the same as in Example 1.

[0064] Only in the second step, adjust the film thickness to 50 nm by adjusting the sputtering time.

[0065] Product performance test results:

[0066] After testing, the responsivity value of the prepared flexible single crystal SnSe thin film material to 1550nm laser is 3.8A / W.

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Abstract

The invention belongs to the related technical field of micro-nano manufacturing and photoelectric detection devices, and discloses a flexible single crystal film photoelectric detection device and a preparation method thereof, and the preparation method comprises the following steps: (1) preparing a single crystal film material on the surface of a NaCl crystal through employing a DC magnetron sputtering technology; (2) stripping the film from the surface of the NaCl crystal; (3) preparing an electrode structure on the flexible plastic substrate; and (4) transferring the stripped and fallen single crystal thin film to the plastic substrate forming the electrode structure to finish the preparation. The invention has the advantages of simple process, green and environment-friendly production process and product, high rate of finished products, low manufacturing cost, capability of realizing broadband detection, high response rate, high flexibility and the like, is suitable for large-scale industrial production, and has wide application prospects in the fields of photoelectric detection, wearable equipment and the like.

Description

technical field [0001] The invention belongs to the technical field related to micro-nano manufacturing and semiconductor optoelectronic devices, and relates to a method for preparing a flexible single-crystal thin-film photoelectric detection device based on the combination of DC magnetron sputtering growth film, solution stripping and transfer technology and its application. Background technique [0002] Due to their excellent electrical, optical, thermoelectric and mechanical properties, tin selenide (SnSe) and tin telluride (SnTe) have become important representatives for the development of new electronic and optoelectronic devices. With the continuous advancement of science and technology, optoelectronic devices are increasingly developing in the direction of miniaturization, miniaturization, flexibility and wearable. For this reason, the thin film of materials has become the main development trend in the field of materials in the future. However, there are still two m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/09C23C14/00C23C14/04C23C14/20C23C14/35C30B23/00C30B29/46
Inventor 刘云杰武玉鹏赵世荣刘英明郝兰众
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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