A kind of preparation method of single crystal graphene

A single crystal graphene, graphene technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems affecting the electrical properties of graphene film, small crystal domains of graphene film, difficult to control, etc. To achieve the effect of research and application promotion, simple method and low cost

Inactive Publication Date: 2011-12-28
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF2 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the CVD method with industrial promotion value to prepare graphene film, because of its fast growth rate, is difficult to control, so that the obtained graphene film has more defects, the crystal domain of the graphene film is small, and there are many grain boundaries, thus affecting The electrical properties (such as electron mobility) of graphene thin films (see Srivastava, A. et al. Chem. Mater. 22, 3457 (2010))

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of single crystal graphene
  • A kind of preparation method of single crystal graphene
  • A kind of preparation method of single crystal graphene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Embodiment 1, adopt PMMA powder to prepare single crystal graphene on copper foil, its concrete steps are as follows:

[0020] Fold the 5 cm x 5 cm metal copper foil in half, put 1g of PMMA powder into it, then seal it up, place it in a chemical vapor deposition chamber and feed 10SCCM (30Pa) of hydrogen and 500SCCM (200Pa) of argon at 25°C / The speed was raised to 1000°C for 80 minutes, and then lowered to room temperature at a speed of 50°C / min to obtain single crystal single atomic layer graphene on the outside of the metal copper foil.

[0021] The single crystal single atomic layer graphene obtained by this embodiment has a ratio of G peak intensity to 2D peak intensity of 0.3, no defect D peak, and a mobility of 16000 cm 2 / Vs.

Embodiment 2

[0022] Embodiment 2, adopt imidazole powder to prepare single crystal nitrogen-doped graphene on nickel foil, its specific steps are as follows:

[0023] Fold a 5 cm x 5 cm metal nickel foil in half, put 0.5 g of imidazole powder into it, then seal it up, place it in a chemical vapor deposition chamber and feed 50 SCCM (80 Pa) of hydrogen and 1000 SCCM (500 Pa) of argon at 25 ° C The speed is raised to 900°C / min, maintained for 150 minutes, and then lowered to room temperature at a speed of 100°C / min, and single crystal nitrogen-doped graphene is obtained on the outside of the metal nickel foil.

[0024] The monocrystalline nitrogen-doped graphene obtained by this example has a ratio of G peak intensity to 2D peak intensity of 1, a defect D peak to G peak ratio of 0.01, a nitrogen atom content of 2%, and a mobility of 500 cm 2 / Vs.

Embodiment 3

[0025] Embodiment 3, using tripropyl boron powder to prepare single crystal boron-doped graphene on nickel foil, its specific steps are as follows:

[0026] Fold a 10 cm x 10 cm metal nickel foil in half, put 2g of tripropyl boron powder into it, then seal it, place it in a chemical vapor deposition chamber and feed 50SCCM (80Pa) of hydrogen and 800SCCM (300Pa) of argon to The temperature was raised to 1020 °C at a rate of 25 °C / min, maintained for 180 minutes, and then lowered to room temperature at a rate of 250 °C / min to obtain single crystal boron-doped graphene on the outside of the metal nickel foil.

[0027] The monocrystalline boron-doped graphene obtained by this example has a ratio of G peak intensity to 2D peak intensity of 1.2, a defect D peak to G peak ratio of 0.05, a boron atomic content of 1%, and a mobility of 300 cm 2 / Vs.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a preparation method of single crystal graphene and belongs to the technical field of functional thin-film materials. The preparation method comprises the following steps of: wrapping hydrocarbon into a metal foil; performing thermal decomposition under a vacuum environment or a mixed atmosphere environment of hydrogen and inert gas; and cooling to room temperature under the vacuum environment or the mixed atmosphere environment of the hydrogen and the inert gas to obtain single crystal graphene (comprising intrinsic or doped single crystal graphene) positioned on thesurface of the outer side of the metal foil, wherein the thermal decomposition temperature is higher than the decomposition temperature of the hydrocarbon and lower than and close to the melting temperature of the metal foil. The preparation method has the characteristics of simpleness, low cost and no pollution and can be used for preparing graphene with large area, high quality and high electronic mobility. The preparation method can be applied in the field of graphene-based electronic devices. By the method, research on the graphene can be promoted.

Description

technical field [0001] The invention belongs to the technical field of functional thin film materials, and relates to a preparation method of graphene thin film, especially a preparation method of single crystal graphene. Background technique [0002] In 2004, Graphene, discovered by Professor Geim of the University of Manchester, is a new carbonaceous material that consists of a single layer of carbon atoms tightly packed into a two-dimensional honeycomb structure. Single-crystal graphene has high electron mobility because of its very few defects inside, which promotes the application of graphene in electronic devices, especially in the field of high-frequency electronic devices. Theoretical research found that graphene has a thickness of 200,000 cm 2 / Vs electron mobility. Graphene also has many exotic physical phenomena, such as integer quantum Hall effect, fractional quantum Hall effect, minimum quantum conductance at zero carrier concentration and dual polarization el...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/00C30B29/02C01B31/04
Inventor 陈远富王泽高李言荣李萍剑张万里
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap