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LED chip base using diamond film as heat sink material and preparation method

A technology of LED chip and diamond film, applied in electrical components, circuits, semiconductor devices, etc., to achieve the effects of less stringent control requirements, high hardness, and improved work efficiency

Inactive Publication Date: 2010-06-02
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is: based on the shortcomings of the existing ceramic packaging base, the present invention designs a LED chip base using diamond film as heat sink material; and solves the problem of connecting the diamond film and the base Problems holding ceramic layers together

Method used

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  • LED chip base using diamond film as heat sink material and preparation method
  • LED chip base using diamond film as heat sink material and preparation method
  • LED chip base using diamond film as heat sink material and preparation method

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Experimental program
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Effect test

Embodiment 1

[0022] The structure of the ceramic LED packaging base of the present invention is as follows: figure 2 As shown, 1 is the patch area, 2 is the electrode bonding area, 3 is the bottom pad, 4 is the electrical conduction hole, 5 is the reflector cup, 6 is the heat conduction column, 7 is the heat dissipation pad, 9 is the diamond film, 10 20 is the upper ceramic layer, and 20 is the lower ceramic layer.

Embodiment 2

[0024] in Al 2 o 3 A diamond film was deposited on a ceramic base, prepared by microwave plasma CVD (MPCVD). Specific steps are as follows:

[0025] The first step is to Al of the LED chip 2 o 3 The ceramic substrate (lower ceramic layer 20 ) is firstly cleaned, and ultrasonically cleaned with acetone and alcohol for 5 minutes respectively.

[0026] The second step is in Al 2 o 3 A layer of AlN film with high thermal conductivity is plated on the ceramic substrate by magnetron sputtering as a transition layer to prevent the growing diamond film from Al 2 o 3 Peel off the ceramic. Sputtering target uses Al target, atmosphere N 2 And Ar gas, the pressure is 1-3Pa, the power is 80-150W, and the time is 5-60min.

[0027] In the third step, the Al coated with AlN film 2 o 3 The ceramic substrate is placed in the CVD diamond film growth reaction chamber, and the reaction gas methane and hydrogen are introduced. The pressure in the reaction chamber is 6k-15kPa, the power ...

Embodiment 3

[0030] A diamond film was deposited on an AlN ceramic pedestal, prepared by microwave plasma CVD (MPCVD). Specific steps are as follows:

[0031] The first step is to clean the AlN ceramic substrate (lower ceramic layer 20) of the LED chip, ultrasonically clean it with acetone and alcohol for 5 minutes, and then grind it with diamond powder or abrasive paste with an average particle size of 0.5 μm. Make uniform scratches on the surface and leave some diamond particles to improve the nucleation rate of the diamond film.

[0032] In the second step, the AlN ceramic substrate is placed in the CVD diamond growth reaction chamber, and the reaction gas methane and hydrogen are introduced. The pressure in the reaction chamber is 6k-15kPa, and the power is 1000-3000W. 2 The flow rate is 500 sccm, the methane flow rate is 10-30 sccm, and the substrate temperature is 700-900°C. The film growth rate is 1-20μm / h, and the growth time is 10-200 hours.

[0033] In the third step, after th...

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Abstract

The invention discloses an LED chip base which uses diamond film as the heat sink material, and a manufacturing method thereof, relating to the LED heat sink technical field. The structure comprises apatching area 1, an electrode routing region 2, a bottom bonding pad 3, an electrical conductive hole 4, a reflecting cup 5, a thermal conduction column 6, a heat dissipation bonding pad 7, a diamondfilm 9, an upper ceramic layer 10 and a lower ceramic layer 20. The method is to grow the CVD diamond film or weld the CVD self-support diamond film on the lower ceramic layer 20 of the ceramic baseto serve as the heat sink system of the LED chip. The invention has good thermal conduction of the heat sink and reduces the thermal resistance of the product to enable the heat to be diffused quickly, thereby improving the LED light-emitting efficiency, upgrading the product reliability and prolonging the service life of the product.

Description

technical field [0001] The invention belongs to the technical field of LED heat sinks, and in particular relates to a new type of LED heat sink material combined with an LED chip ceramic base and a CVD diamond film. Background technique [0002] The full name of LED is semiconductor light-emitting diode, which can directly convert electrical energy into light energy. Semiconductor components are usually very sensitive to temperature. For high-power LEDs, the temperature rise of the P-N junction is very obvious, and many applications require multiple high-power LEDs to be arranged in a dense matrix, and the heat dissipation problem is particularly obvious. Long-term heating or high temperature will seriously affect the efficiency, stability and service life of the device, so the selection of heat sink materials is a problem that needs to be considered to improve LED performance. At present, LEDs that need high temperature resistance are mainly used for long-term lighting str...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/48H01L33/64
Inventor 李红东吕宪义崔田何志邹广田张彤吕建楠
Owner JILIN UNIV
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