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Method for depositing vanadium dioxide thin film on glass under low temperature

A deposition method, a technology of vanadium dioxide, applied in the field of building energy conservation, can solve problems such as obstacles to the industrialization of smart glass and increase the difficulty of industrialization, which have been started as early as the early 1970s, so as to reduce the difficulty and save energy. Effects of energy consumption and low crystallization temperature

Inactive Publication Date: 2008-09-17
GUANGZHOU INST OF ENERGY CONVERSION - CHINESE ACAD OF SCI
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  • Application Information

AI Technical Summary

Problems solved by technology

The research on applying vanadium dioxide to energy-saving windows started as early as the early 1970s, but there are still many technical problems to be solved
At the same time, in the preparation process, VO 2 High deposition temperature (generally higher than 500°C) will be a serious obstacle to the industrialization of this kind of smart glass
On the one hand, high temperature will lead to high power consumption and increase the cost of preparation. On the other hand, it also puts forward more requirements on the preparation system, which increases the difficulty of industrialization

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The multilayer film was prepared by magnetron sputtering, and the magnetron sputtering system included a transition chamber and a main sputtering chamber (45 cm in diameter). The main sputtering chamber is connected with a molecular diffusion pump, and the ultimate vacuum is 2.0×10 -6 Pa. The sputtering chamber has three target positions for three different 2-inch diameter targets. Each target position is inclined upward at an angle of 30°, and can be co-sputtered upwards in a confocal manner or sputtered upwards in a three-target independent manner. The sample stage can be heated up to over 600°C and can keep rotating continuously during the sputtering process.

[0022] In the experiment, the substrate was float glass. The substrate was ultrasonically cleaned in anhydrous alcohol and acetone for 5 minutes, then dried with nitrogen, fixed on the sample stage and placed in a transitional vacuum chamber for vacuuming. After 10 minutes, transfer to the sputtering vacuu...

Embodiment 2

[0028] The vacuum deposition system and substrate cleaning and installation process are the same as those in Embodiment 1. Before thin film sputtering, the glass substrate was heated to 300 °C and kept constant.

[0029] Preparation of silica diffusion barrier layer. Silicon is used as the cathode sputtering material, radio frequency sputtering, and the sputtering power is set to 100W. When the sputtering chamber is fed with Ar gas, it is also fed with O 2 Gas (purity higher than 99.9%), the flow velocity of Ar gas is 30sccm, O 2 The gas flow rate was 7.5 sccm. Sputtering for 20 minutes, deposited Si0 2 The thickness of the film layer is about 60nm.

[0030] Preparation of ZnO seed layer. The preparation conditions are as follows: use metal zinc as the target material (purity: 99.9%), and the working atmosphere is high-purity Ar gas (purity: 99.9995%) and high-purity O 2 Gas (purity: 99.9%) mixed gas. Ar gas is injected into the sputtering chamber with a flow rate of 3...

Embodiment 3

[0034] The vacuum deposition system and substrate cleaning and installation process are the same as those in Embodiment 1.

[0035] Before thin film sputtering, the float glass substrate was heated to 250 °C and kept constant.

[0036] The preparation of the silicon dioxide diffusion barrier layer is exactly the same as in Example 1.

[0037] The preparation of the zinc oxide seed layer was the same as in Example 2, and the sputtering was performed for 50 minutes. At this time, the thickness of the ZnO film deposited on the glass substrate is about 200nm.

[0038] The last is the preparation of vanadium dioxide thermochromatography. Preparation conditions are as follows: adopt vanadium dioxide to make sputtering target material (purity 99.5%), in Ar gas (flow velocity 30sccm) and O 2 Reactive deposition was carried out in a mixed gas of gas (flow rate 1.5 sccm). RF power is set to 100W, sputtering for 100 minutes, VO 2 The film thickness is about 35nm.

[0039] X-ray dif...

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Abstract

Based on the crystal heteroepitaxial growth principle, the invention provides a low-temperature preparation method of depositing a vanadium dioxide film on a glass substrate without changing the quality (thermochromatism) of the vanadium dioxide film. Using glass as substrate, the method comprises the following steps: 1) cleaning and pre-treating the glass substrate; 2) depositing a vanadium dioxide diffusion barrier layer on the glass substrate; 3) depositing a zinc oxide seed crystal layer on the vanadium dioxide diffusion barrier layer; and 4) depositing a vanadium dioxide thermochromic layer on the zinc oxide seed crystal layer. The vanadium dioxide thermochromic layer has low crystallization temperature and lattice constant matched with vanadium dioxide, and is particularly suitable for the heteroepitaxial growth of the vanadium dioxide film. Therefore, the invention can efficiently reduce the deposition temperature of vanadium dioxide film, simplify the process of producing intelligent vanadium dioxide glass, minimize cost and energy consumption, and greatly reduce the difficulty in industrialization of intelligent vanadium dioxide glass.

Description

technical field [0001] The invention belongs to the technical field of building energy saving among high-efficiency energy-saving and consumption-reducing technologies, and in particular relates to a low-temperature deposition method of a vanadium dioxide film on a glass substrate. technical background [0002] According to statistics, my country's building energy consumption has reached 30% of the total social energy consumption. With the expansion of my country's urbanization scale, the advancement of urban construction, and the improvement of people's living standards, building energy consumption will increase year by year. In 1996, my country's construction consumed 330 million tons of standard coal annually, accounting for 24% of the total energy consumption. By 2001, it had reached 376 million tons, accounting for 27.6% of the total consumption, with an annual growth rate of 5 / 1000. According to forecasts, my country's building energy consumption will climb to more tha...

Claims

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Application Information

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IPC IPC(8): C03C17/34C03C17/23
Inventor 徐刚何云富黄春明安赟王福同
Owner GUANGZHOU INST OF ENERGY CONVERSION - CHINESE ACAD OF SCI
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