Inverted laser chip based on SiC substrate and manufacturing method of inverted laser chip

Abstract

The invention provides an inverted laser chip based on an SiC substrate and a manufacturing method of the inverted laser chip. The inverted laser chip based on the SiC substrate comprises a conventional laser chip structure and the SiC substrate. The conventional laser chip structure sequentially comprises a substrate, a buffer layer, an N limit layer, an active area, a P limit layer, a P-type ohm contact layer, a current retaining layer and a metal ohm contact layer from bottom to top. A metal ohm contact layer is plated at the bottom of the SiC substrate, and a metal bonding layer is plated on the other side. The metal ohm contact layer of the conventional laser chip is bonded with the SiC substrate through the metal bonding layer of the SiC substrate. The N electrode metal layer is evaporated on the buffer layer, with original substrate being removed, of the conventional laser chip. The pole N of the manufactured SiC substrate is at the top, and the pole P of the manufactured SiC substrate is at the bottom. Compared with conventional lasers, the inverted laser chip based on the SiC substrate has the advantages of good radiation, good stability, long service life and the like.

Description

technical field [0001] The invention relates to a flip-chip laser chip based on a SiC substrate and a manufacturing method thereof, belonging to the technical field of laser chips. Background technique [0002] Semiconductor lasers have many advantages such as small size, light weight, high efficiency, long life, easy modulation and low price, and have been widely used in industry, medicine and military fields. Among the various key technologies of semiconductor high-power lasers, the solution to the heat dissipation problem is an extremely critical technology. Because semiconductor lasers can generate high peak power, the electro-optical conversion efficiency of these devices is 40%-50%, that is, 50%-60% of the input electric energy is converted into heat energy. For good heat dissipation, the chip is often soldered to a metal heat sink with high thermal conductivity. Since the thermal expansion coefficients of the laser die and the heat sink are inconsistent, temperature...

AI Technical Summary

Problems solved by technology

Because the thermal expansion coefficients of the laser die and the heat sink are inconsistent, temperature changes will lead to thermal stress and laser chip warping and deformation. If the thermal stress is too large, it may even cause problems such as cracking of the bonding layer and die breakage. Solve the heat dissipation problem of semiconductor lasers It will be directly related to the service life of the laser, leading to a rapid increase in the temperature of the active region of the laser, which will cause optical catastrophe of the laser, or even burn the semiconductor laser, seriously affecting the reliability and life of the device

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