An LED
chip-containing
photonic crystal side direction light extractor comprises a substrate, an n-pole area, an
active layer and a p-pole area, wherein, an N
electrode is arranged on the n-pole area; a P
electrode and a current-diffusing layer are arranged on the p-pole area; and a protective layer is arranged on the current-diffusing layer. The
chip is characterized in that: the
photonic crystal side direction light extractor comprises a column array; the column arrays penetrate the p-pole area, the
active layer and the n-pole area to the surface of the substrate; the
photonic crystal side direction light extractor comprises the column array which is arranged on the circumference of the
chip and a column array which is arranged in the middle of the chip; and the current-diffusing layer between the N
electrode and the P electrode keeps an electric
conduction pathway. As the photonic
crystal side direction light extractor is arranged to revise the light angle, the chip further has the
advantage that more lateral optical is project to the outside, thereby greatly improving the external
quantum efficiency of an LED, overcoming the problems that the light taking efficiency of a chip is low; the stress is centralized; the calorific value is big; and the radiating effect is poor. Therefore, the produced LED has the advantages that the performance is stabler; and the luminance is even larger.