Gallium nitride homoepitaxy method based on in situ etching

A homoepitaxial and in-situ etching technology, applied in chemical instruments and methods, from chemically reactive gases, crystal growth, etc., can solve problems affecting the photoelectric properties of homoepitaxial materials, large residual stress, and high dislocation density , to achieve the effect of simple and easy method, improving crystal quality and reducing dislocation density
CN103614769AActive Publication Date: 2014-03-05NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
Publication Date
2014-03-05

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Abstract

The invention discloses a gallium nitride homoepitaxy method based on in situ etching. The method comprises the following steps: 1) selecting a gallium nitride substrate and transferring the substrate into an MOCVD system; 2) conducting fast etching on the substrate for a short time; 3) conducting long-time slow etching after the fast etching to form hexagonal pyramid micro structures on the substrate surface; 4) laterally growing to merge the hexagonal pyramid micro structures; and 5) continuing to grow a high-quality GaN epitaxial layer on the merged film. The invention has the following advantages: through the control of components of in situ etching gas, impurities on the surface of the substrate are removed, while the hexagonal pyramid micro structures are formed on the surface of the substrate; and the micro structures are merged in a lateral epitaxial stage, so as to reduce the dislocation density of the epitaxial layer and finally obtain the gallium nitride epitaxial thin film with high quality. Formation of hexagonal pyramid micro structures on the surface of the substrate does not need additional process equipment; the method is economical, simple and practicable; and the epitaxial material has good performance. Therefore, the method provided by the invention is an effective solution for realizing high-quality and low-cost growth of GaN epitaxial thin film.
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Description

technical field

[0001] The invention relates to a gallium nitride homoepitaxial method based on in-situ etching, which belongs to the technical field of semiconductors. Background technique

[0002] Group III nitrides (including gallium nitride, aluminum nitride, aluminum gallium nitride, indium nitride, indium gallium nitride, indium aluminum gallium nitride, etc.), the band gap can be adjusted between 0.7eV-6.28eV, Covers the entire mid-infrared, visible, and ultraviolet bands. In optoelectronic applications, such as white light diodes (LEDs), blue lasers (LDs), and ultraviolet detectors, they have achieved important applications and developments. In addition, gallium nitride (GaN), one of the representatives of the third-generation semiconductors, has a direct band gap, high saturation electron drift velocity, high breakdown electric field, and high thermal conductivity, as well as high thermal and chemical stability. It can be used to make high-temperature, high-freque...

Claims

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