Gallium nitride homoepitaxy method based on in situ etching

A homoepitaxial and in-situ etching technology, applied in chemical instruments and methods, from chemically reactive gases, crystal growth, etc., can solve problems affecting the photoelectric properties of homoepitaxial materials, large residual stress, and high dislocation density , to achieve the effect of simple and easy method, improving crystal quality and reducing dislocation density

Active Publication Date: 2014-03-05
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
View PDF4 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the GaN substrate prepared by this method still has many problems, such as: large residual stress, severe warpage, and relatively high dislocation density (greater than 10 5 cm -2 )Wait
At the same time, during the post-polishing and cleaning process of the GaN substrate, impurities such as Si, C, and O will be introduced on the substrate surface. During the homoepitaxial process, the impurity ions diffuse into the epitaxial layer and form defects, which affect the homoepitaxial material. Photoelectric properties [Appl. Phys. Lett. 92, 133513 (2008)]

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gallium nitride homoepitaxy method based on in situ etching
  • Gallium nitride homoepitaxy method based on in situ etching
  • Gallium nitride homoepitaxy method based on in situ etching

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Embodiment 1: refer to figure 1

[0028] 1) Select a C-side self-supporting gallium nitride substrate, use acetone, ethanol and deionized water to sonicate for 5 minutes, and finally use high-purity nitrogen to blow off its moisture;

[0029] 2) Transfer the cleaned gallium nitride substrate to a metal organic chemical vapor deposition (MOCVD) system, with the front side (0001) facing up, the reaction chamber pressure is 100torr, heated to 1100°C, and 3000 sccmNH is introduced during the heating process 3 to protect

[0030] 3) Keep the pressure of the reaction chamber at 100torr, the temperature at 1100°C, and turn off the NH 3 , into H 2 , make the reaction chamber in a pure hydrogen atmosphere, and etch rapidly for 1 minute;

[0031] 4) Keep the pressure and temperature constant, and feed NH 3 , so that the reaction chamber is in the mixed gas of hydrogen and ammonia (H 2 :NH 3 =40:1) atmosphere, slow etching for 30 minutes;

[0032] 5) Keep the pressure and ...

Embodiment 2

[0035] 1) Select a C-side self-supporting gallium nitride substrate, use acetone, ethanol and deionized water to sonicate for 5 minutes, and finally use high-purity nitrogen to blow off its moisture;

[0036] 2) Transfer the cleaned gallium nitride substrate to a metal organic chemical vapor deposition (MOCVD) system, with the front side (0001) facing up, the reaction chamber pressure is 200torr, heated to 1050°C, and 3000 sccm is introduced during the heating process NH 3 for protection;

[0037] 3) Keep the reaction chamber pressure at 200torr, temperature at 1050°C, turn off NH3 , into H 2 , so that the reaction chamber is in a pure hydrogen atmosphere, rapid etching for 90 seconds;

[0038] 4) Keep the pressure and temperature constant, and feed NH 3 , so that the reaction chamber is in the mixed gas of hydrogen and ammonia (H 2 :NH 3 =30:1) atmosphere, slow etching for 40 minutes;

[0039] 5) The temperature rises to 1080°C, the pressure drops to 75torr, and the rea...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a gallium nitride homoepitaxy method based on in situ etching. The method comprises the following steps: 1) selecting a gallium nitride substrate and transferring the substrate into an MOCVD system; 2) conducting fast etching on the substrate for a short time; 3) conducting long-time slow etching after the fast etching to form hexagonal pyramid micro structures on the substrate surface; 4) laterally growing to merge the hexagonal pyramid micro structures; and 5) continuing to grow a high-quality GaN epitaxial layer on the merged film. The invention has the following advantages: through the control of components of in situ etching gas, impurities on the surface of the substrate are removed, while the hexagonal pyramid micro structures are formed on the surface of the substrate; and the micro structures are merged in a lateral epitaxial stage, so as to reduce the dislocation density of the epitaxial layer and finally obtain the gallium nitride epitaxial thin film with high quality. Formation of hexagonal pyramid micro structures on the surface of the substrate does not need additional process equipment; the method is economical, simple and practicable; and the epitaxial material has good performance. Therefore, the method provided by the invention is an effective solution for realizing high-quality and low-cost growth of GaN epitaxial thin film.

Description

technical field [0001] The invention relates to a gallium nitride homoepitaxial method based on in-situ etching, which belongs to the technical field of semiconductors. Background technique [0002] Group III nitrides (including gallium nitride, aluminum nitride, aluminum gallium nitride, indium nitride, indium gallium nitride, indium aluminum gallium nitride, etc.), the band gap can be adjusted between 0.7eV-6.28eV, Covers the entire mid-infrared, visible, and ultraviolet bands. In optoelectronic applications, such as white light diodes (LEDs), blue lasers (LDs), and ultraviolet detectors, they have achieved important applications and developments. In addition, gallium nitride (GaN), one of the representatives of the third-generation semiconductors, has a direct band gap, high saturation electron drift velocity, high breakdown electric field, and high thermal conductivity, as well as high thermal and chemical stability. It can be used to make high-temperature, high-freque...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/20H01L21/02
Inventor 罗伟科李亮李忠辉张东国彭大青董逊
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap