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397 results about "Lower field" patented technology

Full-automatic bulk cargo storage yard stacking and taking method

The invention relates to a full-automatic bulk cargo storage yard stacking and taking method applied to large port wharfs, truck stations and open storages. According to the method, when a stacking and taking machine works, an operating driver for operating and monitoring is not needed in a cab of the stacking and taking machine and a person for control and operation of the whole process is also not needed in a field industrial personal computer on the basis of fully ensuring the utilization rate of a stock yard and exerting the stacking and taking capacity and other functions of the stacking and taking machine. After the field industrial personal computer acquires an operation task from a management system, optimal calculation and security inspection are performed according to the condition of the stock yard and the state of the stacking and taking machine, and related stacking or taking mode information is automatically generated; and then the system automatically sends related control instructions to a programmable logic controller (PLC) corresponding to the local stacking and taking machine, and the stacking and taking machine performs unmanned automatic stacking and taking operation of the whole process. Therefore, the method overcomes the defects of low automation degree of the conventional bulk cargo storage yard, high labor intensity of operators, low working efficiency and low field utilization rate.
Owner:上海派恩科技有限公司

Polarization enhanced avalanche photodetector and method thereof

An avalanche photodetector comprising a multiplication layer formed of a first material having a first polarization; the multiplication layer having a first electric field upon application of a bias voltage; an absorption layer formed of a second material having a second polarization forming an interface with the multiplication layer; the absorption layer having a second electric field upon application of the bias voltage, the second electric field being less than the first electric field or substantially zero, carriers created by light absorbed in the absorption layer being multiplied in the multiplication layer due to the first electric field; the absorption layer having a second polarization which is greater or less than the first polarization to thereby create an interface charge; the interface charge being positive when the first material predominately multiplies holes, the interface charge being negative when the first material predominately multiplies electrons, the change in electric field at the interface occurring abruptly at the atomic level; the interface charge creating electric field discontinuity causing first electric field to attain the breakdown field in the multiplication region and the second electric field to be low or zero in the absorption layer to thereby eliminate the need for a doped charge layer and the associated thickness of the doped charge layer required to transition from the low field to the high field. Also claimed is a method of making.
Owner:ARMY THE UNITED STATES OF AMERICA AS REPREENTED BY THE SECRRETARY OF THE
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