The present invention discloses a method for measuring
microwave emissivity of a scene based on reflection, comprising: placing an observation target on a flat surface, receiving microwaves emitted from the observation target and
cold air at the same emission angle #imgabs0#, reflecting from the observation target, and obtaining a first output
voltage; placing the observation target on a flat surface, receiving microwaves emitted from the observation target and
cold air at the same emission angle #imgabs1#, reflecting from a reference wall, then reflecting from the observation target, and then reflecting from the reference wall, and obtaining a second output
voltage; receiving microwaves emitted from the
cold air at an emission angle #imgabs2#, reflecting from the reference wall, and obtaining a third output
voltage; receiving microwaves emitted from the cold air at an emission angle #imgabs3#, obtaining a fourth output voltage; and calculating the
emissivity of the observation target at an emission angle #imgabs4#. This rapid
emissivity measurement method can calculate the
microwave emissivity of the observation target without
absolute calibration, and has the advantages of low hardware requirements and simple process operations.