Loading table structure and processing device

Abstract

A loading table structure which is adapted, in order to prevent damage to the loading table, so that large thermal stress does not occur in the loading table and so that the amount of supply of a purge gas for corrosion prevention to the loading table is minimized. The loading table structure (54) is formed in a processing container (22) capable of discharging gas contained therein and is used to load thereon an object (W) to be processed. The loading table structure (54) is provided with a loading table (58) on which the object (W) to be processed is loaded and which consists of a dielectric, a heating means (64) which is provided to the loading table (58) and which heats the object (W) to be processed loaded on the loading table (58), and protective strut tubes (60) which are mounted so as to vertically rise from the bottom section (44) of the processing container (22), which have upper ends joined to the lower surface of the loading table (58) to support the loading table (58), and which consist of a dielectric. A functional bar (62) extending up to the loading table is inserted into each protective strut tube (60).

Description

technical field [0001] The present invention relates to a processing device and a stage structure for a target object such as a semiconductor wafer. Background technique [0002] In general, in the manufacture of semiconductor integrated circuits, various individual processes such as film formation, etching, heat treatment, modification, and crystallization are repeatedly performed on a target object such as a semiconductor wafer. The desired integrated circuit is thus formed. When performing the above-mentioned various treatments, the necessary processing gas is corresponding to the type of the treatment, such as film-forming gas or halogen gas during film-forming treatment, ozone gas during modification treatment, etc. N 2 Inert gas such as gas or O 2 Gas and the like are introduced into each processing container. [0003] For example, a sheet-type processing apparatus for heat-treating one semiconductor wafer includes, for example, a mounting table in which a resistan...

AI Technical Summary

Problems solved by technology

[0019] However, at this time, it is difficult to prevent the purge gas supplied into the column 4 from leaking to the processing space side in the processing container through the above-mentioned minute gap.

As a result, it is difficult to perform processes under high vacuum

In addition, there is also a problem of high operating costs due to the large consumption of purge gas

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