A machining process of a large screen sapphire mobile-phone panel
A panel processing and sapphire technology, which is applied to the structure of telephones, telephone communications, instruments, etc., can solve the problems of poor yield rate, difficult processing, low efficiency, etc., to improve product strength, high processing efficiency, and good appearance quality Effect
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Embodiment 1
[0024] Carry out 5.0-inch sapphire panel processing according to the following process steps in sequence.
[0025] 1) Cut the sapphire crystal block into a block with a diagonal size of 5 inches. The unilateral finishing allowance of the blank product: 28C (0.28mm), and the block is formed at a 4R angle;
[0026] Block cutting into flakes: Cut the product into flakes with wire cutting equipment;
[0027] Double-sided grinding and thinning with double-sided copper disc machine: Among them, the pressure per unit surface of the grinding machine and the upper disc is controlled at: 0.03kg / cm 2 , combined with boron carbide abrasives to thin the products after wire cutting. The thickness of the polished sapphire panel is controlled at ±0.01mm, TTV (thickness difference) ≤ 10um, WARP (warpage) ≤ 10um, Ra (surface roughness) 400nm;
[0028] Heat treatment 1: First, the temperature is raised from 25°C to 1650°C within 12 hours, then kept at 1650°C for 12 hours, and finally cooled to...
Embodiment 2
[0049] Carry out 6.0-inch sapphire panel processing according to the following process steps in sequence.
[0050] 1) The sapphire crystal block is formed, the sapphire is cut into a block with a diagonal size of 6.0 inches, the unilateral finishing allowance of the blank product: 28C (0.28mm), and the block is formed at a 4R angle;
[0051] Block cutting into pieces: cutting the product into pieces with wire cutting equipment;
[0052] Double-sided grinding and thinning: flatness: 0.05mm, the unit surface pressure of the grinding machine and the upper plate is controlled at 0.07kg / cm 2 , combined with boron carbide abrasives to thin the products after wire cutting. The thickness of the polished sapphire panel is controlled at: ±0.01mm; TTV (thickness difference): ≤10um; WARP (warpage): ≤10um, Ra: 800nm;
[0053] Heat treatment 1: Through high temperature, the residual thermal stress in the sapphire growth process is improved, which is beneficial to the subsequent product gr...
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