181results about How to "Inhibit thermal stress" patented technology

A hybrid aerodynamic thrust system as a prime mover for aircraft or other high-speed vehicles. An arrangement of dual thrust resources to alternately accommodate low and high airspeed regimes. Electromotive force is used in lieu of hot section power turbines to achieve engine air compression or alternately perform thrust work at low velocities.

A method for manufacturing a hetero-bonded wafer having a large mismatch of thermal expansion coefficient comprises forming a wafer bonding means and an electrical interconnection means on at least one bonding surface of two wafers to be bonded with each other, forming grooves in the bonding surface of one wafer along dicing lines with an interval between the grooves being equal to or an even multiple of a die width, bonding the two wafers at a temperature less than 200° C. thinning a back side of the grooved wafer such that at least a portion of the grooves is exposed, and rebonding the bonded wafer pair at an elevated temperature higher than the first bonding temperature. The method for manufacturing a hetero-bonded wafer can avoid wafer level bow / warp and also reduce debonding and cracking in individual segments induced by thermal stress due to a mismatch of thermal expansion coefficient. Embodiments of the method are useful for wafer level packaging and the fabrication of hybrid devices by heterogeneous wafer bonding.

A solar tower central receiver with separated boiler and Super-Heater allows better control on the output steam's temperature. The boiler takes higher solar flux density and works at lower temperature while the Super-Heater takes lower solar flux and works at high temperature to optimize the cost to performance ratio. The solar fluxes of the boiler and super-heater are adjustable through the pointing of the heliostats. The boiler consists of parallel pipes as solar absorber and the Super-Heater consists of helix parallel pipes as solar absorber. The steam drum chamber interconnects boiler and Super-Heater. The absorb pipes and circulation pipes are connected to water chamber, steam drum chamber, and Super-Heater chambers. The water level sensor and temperature sensors provide information regarding the operating status of the receiver.

An exhaust gas purifying device includes a tubular casing arranged in exhaust passages of an internal combustion engine. A filter is held in the casing. The filter collects and burns particulates contained in the exhaust gas discharged by the internal combustion engine. The casing has a double structure including an inner case supporting an outer peripheral surface of the filter and an outer case arranged around the inner case. The inner and outer cases are spaced from each other with a clearance defined between the cases.

The present invention relates to an improved exhaust gas cleaning system and method for a combustion source comprising a hydrogen generation system, a sulfur oxides trap, and a nitrogen storage reduction (NSR) catalyst trap. The improved exhaust gas cleaning system and method of the present invention also provides for a water-gas-shift catalyst between the sulfur oxides trap and the NSR catalyst trap, and a clean-up catalyst downstream of the NSR catalyst trap. The invention provides also a sulfur trap regenerable at moderate temperatures with rich pulses, rather than at high temperatures. The improved exhaust gas cleaning system of the present invention provides for the sulfur released from the sulfur trap to pass through the nitrogen oxide trap with no or little poisoning of NOx storage and reduction sites, which significantly improves NSR catalyst trap lifetime and performance to meet future emissions standards. The disclosed exhaust gas cleaning systems are suitable for use in internal combustion engines (e.g., diesel, gasoline, CNG) which operate with lean air / fuel ratios over most of the operating period.

A conductive trace structure and a semiconductor package having the conductive trace structure are provided. A plurality of conductive traces are formed in and surrounding a chip mounting area on a substrate, for mounting a chip on the chip mounting area. Widened portions are formed on the conductive traces in the chip mounting area and at positions across a periphery of the chip mounting area, the widened portions having a line width larger than that of the rest part of the conductive traces. The widened portions of the conductive traces can sustain concentrated thermal stress from the peripheral area of the chip caused by mismatch in coefficient of thermal expansion between the chip and the substrate. This prevents the conductive traces that pass through the periphery of the chip mounting area from cracks or breaks due to the thermal stress, thereby improving the reliability and yield of the semiconductor package.

An electro-optic device is provided with an substrate, in which a stress relieving film formed of a doped silicon oxide film is formed between a third interlayer insulating film formed of a non-doped silicon oxide film and a pixel electrode formed of an aluminum film or the like. The stress relieving film is formed of the doped silicon oxide film, has a thermal expansion coefficient different from that of the third interlayer insulating film, comes in contact with the third interlayer insulating film, has a thermal expansion coefficient different from that of the pixel electrode, and comes in contact with the pixel electrode. The thermal expansion coefficients are in the following relation of Third Interlayer Insulating Film<Stress relieving Film<Pixel Electrode.

A multi-layer wiring board without a core substrate includes: a multi-layer laminated structure; first terminals provided on a front surface of the multi-layer laminated structure; second terminals provided on a rear surface of the multi-layer laminated structure; a solder resist which covers the rear surface and which has solder resist openings formed at positions corresponding to the second terminals; a reinforcing plate which is made of a non-metal material and which has reinforcing plate openings formed at positions corresponding to the second terminals; and an adhesive layer interposed between the solder resist and the reinforcing plate to fix the reinforcing plate to the solder resist and which includes adhesive layer openings formed at positions corresponding to the second terminals. A diameter of the solder resist openings and a diameter of the reinforcing plate openings are smaller than that of the adhesive layer openings.

A method of varying the temperature of a tube bundle reactor for catalytic gas phase reactions upon start-up and shut-down, the tube bundle reactor comprising a major reactor portion which includes a bundle of vertically disposed reactor tubes, upper and lower tubesheets tightly connected to the upper and lower ends, respectively, of the reactor tubes, and a reactor shell enclosing the tube bundle, a heat transfer medium having a melting temperature in the range of from 100° C. to 450° C. flowing around the outer surfaces of the reactor tubes during normal operation and being circulated in at least one circuit through the major reactor portion, comprising the steps: (a) varying the heat transfer medium temperature during circulation of the heat transfer medium; and (b) passing a temperature gas through the reactor tubes at least when the heat transfer medium is not yet or no longer circulated.

A gas turbine power system for generating energy by means of a gas turbine cycle, wherein heat energy is more effectively used by burning the exhaust gases (109) and the partial oxidation of said exhaust gases (109) is achieved by means of a hypostoichiometric amount of air and steam fed into a catalytic reactor (107) to form a first oxidation stage followed downstream in said turbine (103) by additional oxidation occurring in a power turbine (104) or downstream therefrom, said power turbine being in turn arranged downstream from the catalytic reactor (107). Catalytic partial oxidation may be performed using a supply of an initiating agent, particularly hydrogen. The method is remarkable in that the hydrogen fed into the reactor inlet through an injector (113) is provided by recycling part of the effluent from the reactor, the power turbine or a reforming reactor for reforming part of the fuel gas with a large excess amount of steam for performing catalytic partial oxidation.

A head module includes a head chip provided with an array of heat generating elements, a nozzle sheet provided with nozzles, a barrier layer for forming ink liquid chambers, a module frame adhered to the nozzle sheet to thereby support the nozzle sheet and provided with a head chip arranging hole for arranging the head chip therein, and a buffer tank which is so disposed as to cover the head chip arranging hole from a surface, on the opposite side of the surface of adhesion to the nozzle sheet, of the module frame and which is for forming a common liquid conduit communicated with all the ink chambers of the head chip.

A conductive trace structure and a semiconductor package having the conductive trace structure are provided. A plurality of conductive traces are formed in and surrounding a chip mounting area on a substrate, for mounting a chip on the chip mounting area. Widened portions are formed on the conductive traces in the chip mounting area and at positions across a periphery of the chip mounting area, the widened portions having a line width larger than that of the rest part of the conductive traces. The widened portions of the conductive traces can sustain concentrated thermal stress from the peripheral area of the chip caused by mismatch in coefficient of thermal expansion between the chip and the substrate. This prevents the conductive traces that pass through the periphery of the chip mounting area from cracks or breaks due to the thermal stress, thereby improving the reliability and yield of the semiconductor package.

The invention provides a thermoelectric conversion module and a thermoelectric conversion element. The thermoelectric conversion module comprises a plurality of thermoelectric conversion elements and a plurality of electrodes, wherein each of the thermoelectric conversion elements is made of a sintered body containing a thermoelectric conversion material and a conductive metal, has two faces, and satisfies the following condition (a) or (b): (a) each thermoelectric conversion element is electrically connected to an electrode via one face without a joint and is electrically connected to another electrode via the other face with a joint, (b) each thermoelectric conversion element is electrically connected to an electrode via one face without a joint and is electrically connected to another electrode via the other face without a joint.

A method of producing a nickel base alloy includes casting the alloy within a casting mold and subsequently annealing and overaging the ingot at at least 1200° F. (649° C.) for at least 10 hours. The ingot is electroslag remelted at a melt rate of at least 8 lbs / min. (3.63 kg / min.), and the ESR ingot is then transferred to a heating furnace within 4 hours of complete solidification and is subjected to a novel post-ESR heat treatment. A suitable VAR electrode is provided form the ESR ingot, and the electrode is vacuum arc remelted at a melt rate of 8 to 11 lbs / minute (3.63 to 5.00 kg / minute) to provide a VAR ingot. The method allows premium quality VAR ingots having diameters greater than 30 inches (762 mm) to be prepared from Alloy 718 and other nickel base superalloys subject to significant segregation on casting.

The present invention relates to an arrangement comprising an igniter plug of the semiconductor in shell type, a duct secured to a combustion chamber of a gas turbine engine, a floating sleeve via which the igniter plug is mounted in the duct, in order to accommodate expansion along an axis perpendicular to the axis of the igniter plug. It notably comprises means for guiding air to cool the semiconductor of the igniter plug, the shell and the semiconductor defining, at their combustion-chamber end, an annular igniter plug cavity, and the shell comprising orifices in the region of the igniter plug annular cavity that communicate with the annular cavity of the sleeve and orifices on its planar surface.

A method and device for monitoring thermal stress in a user is described. The device is designed to include a material having specific thermodynamic properties and physical dimensions defined as a function of those thermodynamic properties. A system for thermal stress monitoring including a thermal stress monitoring device configured within a garment is also described.

In methods of manufacturing a semiconductor device, a substrate having a first surface and a second surface opposite to the first surface is prepared. A sacrificial layer pattern is formed in a region of the substrate that a through electrode will be formed. The sacrificial layer pattern extends from the first surface of the substrate in a thickness direction of the substrate. An upper wiring layer is formed on the first surface of the substrate. The upper wiring layer includes a wiring on the sacrificial layer pattern. The second surface of the substrate is partially removed to expose the sacrificial layer pattern. The sacrificial layer pattern is removed from the second surface of the substrate to form an opening that exposes the wiring. A through electrode is formed in the opening to be electrically connected to the wiring.

A high strength window for a radiation detection system has a plurality of ribs comprising beryllium material. There are openings between the plurality of ribs. The tops of the ribs terminate generally in a common plane. The high strength window also has a support frame around a perimeter of the ribs. A layer of thin polymer film material is disposed over and spans the plurality of ribs and openings to pass radiation therethrough. A radiation detection system comprises a high strength window as described above and a sensor behind the window. The sensor is configured to detect radiation that passes through the window.

A system, method, and ink for printing a data carrying mark on a green ceramic honeycomb structure is provided. The system includes a printer having an ink jet print head that prints a mark, preferably in the form of a two-dimensional data matrix barcode, on a side wall of the green ceramic honeycomb structure. The ink may be a heat resistant ink that comprises a mixture of a glass or glass ceramic frit and a metal oxide colorant. An optical reader is provided for determining if the data is accurately reproduced in the printed mark, as well as any noise factor which may be present due to defective printing. The system includes a turntable that positions the green body for the printing operation, and then rotates the green body to position the printed mark first in front of a dryer, and then in front of the optical reader to determine the quality of the mark. Marked green and ceramic honeycombs are also provided as well as a method for repairing a defective applied bar code on a honeycomb structure.

A plasma generating electrode includes two types of plate-shaped unit electrodes of different polarities, the two types of unit electrodes of different polarities being hierarchically and alternately stacked at specific intervals, a discharge space for generating plasma being formed between the opposing unit electrodes, each of the unit electrodes of one polarity among the two types of unit electrodes of different polarities including a plate-shaped conductor exhibiting conductivity and a ceramic dielectric disposed to cover the conductor, the ceramic dielectric of the unit electrode of one polarity including a support protrusion for forming the discharge space for generating plasma between the opposing unit electrodes and at least a part of a space in which the unit electrode of the other polarity is disposed opposite to the unit electrode of one polarity and for supporting the unit electrode of one polarity, the support protrusion being integrally formed with the ceramic dielectric on at least one surface of the ceramic dielectric on at least one end of the ceramic dielectric in one direction.

The present invention prevents cracking of a brake shoe even when the sliding surface of the brake shoe is heated to a high temperature and provides high reliability. The present invention provides a brake shoe for elevator emergency stop which generates a braking force by pressing brake shoes against a guide rail and making the brake shoes 5 slide to stop an elevator cage in the event of anomalies, including the brake shoes made of a cast iron material having a plurality of grooves 3 formed in a direction substantially perpendicular to the guide rail and gear teeth which constitute a sliding surface with the brake shoes 5 formed as gaps between the grooves, wherein the depth of the grooves is 3 mm or more and not more than 1.7 times the width of the gear teeth.

Semiconductor devices, semiconductor wafers, and semiconductor modules are provided, wherein: the semiconductor device has a small warp; damage at the chip edge and cracks occurring in a dropping test are scarcely generated; and the semiconductor device is superior in mounting reliability and mass producibility. The semiconductor includes a semiconductor chip 64; a porous stress relaxing layer 3 provided on the plane, whereon circuits and electrodes are formed, of the semiconductor chip; a circuit layer 2 provided on the stress relaxing layer and connected to the electrodes; and external terminals 10 provided on the circuit layer; wherein an organic protecting film 7 is formed on the plane, opposite to the stress relaxing layer, of the semiconductor chip, and respective side planes of the stress relaxing layer, the semiconductor chip 6, and the protecting film 7 are exposed outside on the same plane.

PCT No. PCT / JP97 / 02626 Sec. 371 Date Sep. 28, 1998 Sec. 102(e) Date Sep. 28, 1998 PCT Filed Jul. 29, 1997 PCT Pub. No. WO98 / 05901 PCT Pub. Date Dec. 2, 1998A heat-resistant assembly to shield boiler tubes which does not entail a thick heat-resistant block. This structure would be interposed between the boiler tubes and the combustion gases. Such a structure would be distinguished by the fact that it comprises heat-resistant block 16, itself composed of curved portion 16a, whose inner surface at one point comes in contact with the aforesaid boiler tube 11, and connecting portions 16b, and the aforesaid boiler tube assembly 12. The interlocking attachment structure which interlockingly secures these two components together in such a way that the block can be mounted or removed comprises recess 17, 58 or 68 and tongue 18, 59 or 69.

An igniter plug arrangement is disclosed. The arrangement includes an igniter plug of the semiconductor in shell type, a duct secured to a combustion chamber of a gas turbine engine, a floating sleeve via which the igniter plug is mounted in the duct, and a system for guiding air to cool the semiconductor of the igniter plug. The shell and the semiconductor define, at their combustion-chamber end, an annular igniter plug cavity. The shell includes orifices in the region of the igniter plug annular cavity that communicate with the annular cavity of the sleeve and orifices on its planar surface.

We provide methods and apparatus for preparing crystalline-clad and crystalline core optical fibers with minimal or no breakage by minimizing the influence of thermal stress during a liquid phase epitaxy (LPE) process as well as the fiber with precisely controlled number of modes propagated in the crystalline cladding and crystalline core fiber via precisely controlling the diameter of crystalline fiber core with under-saturated LPE flux. The resulting crystalline cladding and crystalline core optical fibers are also reported.

A semiconductor device includes: a conductive-patterned insulating substrate; conductive blocks fixed to conductive patterns of the conductive-patterned insulating substrate; a semiconductor chip fixed to each conductive block; a printed circuit board that has a conductive post fixed to the semiconductor chip; and a resin. The semiconductor device is configured such that the average volume of a conductive film per unit area of each conductive pattern around a section thereof, to which the corresponding conductive block is fixed, is reduced from the conductive block toward the outside.

An evaporation mask is placed between an evaporation source and a plastic substrate. An evaporation substance from the evaporation source is allowed to selectively pass through one or more openings formed on the evaporation mask corresponding to the pattern of an evaporation layer of an EL element, to form the evaporation layer on the plastic substrate. As the material for the evaporation mask, a material whose thermal expansion coefficient is similar to (for example, within a range of ±30% of) the thermal expansion coefficient of the plastic substrate, for example, a plastic material such as a polyimide, is employed. It is preferable to employ a material having a thermal endurance which is, for example, at least approximately 50° C. higher than the thermal endurance of the plastic substrate. By employing such a material for the evaporation mask, it is possible to ensure that the plastic substrate and the evaporation mask will exhibit the same degree of thermal deformation during evaporation, thereby enabling improvement in the precision of evaporation patterning.