12 results about "Plasma impedance" patented technology

An ignition system is provided. The ignition system includes at least one ignition module, which has an input end to receive control signal from the ECU, and an output end to supply ignition energy to the spark gap. The ignition module provides on-demand ignition energy based on an engine operation conditions with adaptively controlled discharge current amplitude and duration using prompt feedback signals measurement of the plasma impedance.

Aspects provided herein generally include apparatus, plasma processing systems and methods for tuning in a radio frequency (RF) plasma processing system for improving substrate processing metrics. Some aspects are directed to an apparatus for processing a substrate in a plasma processing system. The apparatus generally includes: an RF signal generator; a first matching network; a second matching network; a first diode coupled between the RF signal generator and the first matching network; a second diode coupled between the RF signal generator and the second matching network; and a driver having a first output coupled to the first diode and a second output coupled to the second diode.

This invention relates to the field of semiconductor thin film deposition and vacuum coating process control, specifically to a method for controlling the backside deposition of AuGe alloy. The method is applied to a deposition chamber equipped with an edge airflow adjustment device and an electromagnetic confinement coil. The method includes: acquiring real-time gas pressure data and real-time plasma impedance data of the edge region; extracting gas pressure fluctuation signals and plasma impedance signals to generate an initial state dataset; extracting high-frequency noise features based on the initial state dataset to generate an edge flow field instability index characterizing the degree of AuGe atom free cluster accumulation; calculating the critical time to reach a preset failure threshold based on this index and determining a target control strategy; and dynamically adjusting the edge protection airflow parameters and confinement magnetic field parameters according to the target control strategy to reduce the accumulation degree and prevent abnormal deposition of AuGe alloy on the backside.

The application provides a plasma etching device and a frequency modulation method thereof. The device comprises a reaction chamber and a radio frequency power supply, and is used to realize a plasma process comprising at least two sequentially circulating steps, each step comprising a process transition phase and a process stable phase. The method comprises: during the process transition phase of each step, controlling the radio frequency power supply to work at a fixed frequency, which is a preset initial frequency corresponding to the corresponding step; after each step enters the process stable phase, adjusting the frequency of the radio frequency power supply to obtain a matching frequency corresponding to the corresponding step in the current cycle. When each step is executed for the first time, the frequency of the radio frequency power supply is adjusted starting from the preset initial frequency corresponding to the corresponding step; when each step is executed for the second time, the frequency of the radio frequency power supply is adjusted starting from the matching frequency of the corresponding step in the previous cycle. The application can realize fast and accurate matching of plasma impedance in the plasma process with step cycle switching.

The present application relates to the field of semiconductor thin film deposition and vacuum coating process control, specifically to a AuGe alloy coating back deposition control method, applied to a deposition chamber configured with an edge airflow adjusting device and an electromagnetic restraining coil, comprising: obtaining real-time air pressure data and real-time plasma impedance data of the edge area, extracting air pressure fluctuation signals and plasma impedance signals, and generating an initial state data set; extracting high-frequency noise features based on the initial state data set, and generating an edge flow field instability index representing the accumulation degree of AuGe atomic free clusters; based on the index, calculating the critical time of reaching the preset failure threshold and determining the target control strategy; dynamically adjusting the edge protection airflow parameters and the restraining magnetic field parameters according to the target control strategy, so as to reduce the accumulation degree and prevent abnormal deposition of AuGe alloy on the back.

The invention discloses a load modeling and system control method considering an annular plasma source under multi-physics field coupling in the technical field of plasma sources. According to the method, plasma impedance Zp is equivalent to a series circuit model of nonlinear impedance Rp and inductive reactance Lp, a polynomial fitting relational expression of impedance and inductive reactance is established by constructing a multi-physical field coupling mathematical model, then a simulation model of the impedance Zp is constructed, and the model can predict Zp values under different physical parameters. The predicted value participates in control of a driving power supply, and a basis is provided for constant current / constant power mode switching of the system. The load modeling method is non-invasive high-precision measurement, invasive limitation of a Langmuir probe is avoided, the error of the predicted impedance parameter is small, and the plasma source is accurately and stably controlled in a complex environment. Meanwhile, according to the system control method, full-load-range ZVS conduction is achieved through dynamic intercept prediction, reactive power is restrained, and system efficiency and stability are improved.

The application discloses a kind of multimode intelligent monitoring numerical control machine tool, belong to numerical control machine tool technical field, solve the problem that when high speed / precision / discontinuous cutting, monitoring machine tool environment closed loop coupling, working condition burst sensor distortion, install sensing micro modification structure and induce flutter, both interweave into observation artifact, cause ghost alarm and threshold dilemma.Problems include numerical control machine tool body, and multimode monitoring circuit, the multimode monitoring circuit includes the main control processing unit connected with numerical control controller in numerical control machine tool body, and the distributed injection phase-locked array module connected with main control processing unit, magnetoelastic torque sensor module, plasma impedance sensor module, strain field interference sensor module, thermal birefringence sensor module.The application actively injects multi-physical field excitation and synchronously collects response, real-time decoupling compensation sensing disturbance, output high confidence eigenstate estimation and dynamic self-optimizing parameter, break the measurement disturbance closed loop, reconstruct extreme working condition data credibility.

The invention relates to the technical field of preparation of optical dielectric film materials, and discloses a preparation method of a dielectric film material of a high-performance achromatic light splitting element, which comprises the following steps of: applying a low-frequency modulation formula to reaction gas to regulate and control an equivalent optical constant in reactive sputtering by adopting a single metal target material; meanwhile, plasma impedance characteristic signals in the process are monitored in real time and compared with reference impedance characteristics, a feedback control loop is established to automatically adjust a low-frequency modulation formula, and in-situ allocation of equivalent optical constants is achieved through low-frequency modulation; and furthermore, a plasma impedance signal associated with the modulation process is used as an endogenous probe to construct closed-loop feedback, so that the process drift is actively compensated, and the high consistency of the performance of the optical element in batch preparation is ensured.

Systems and methods for identifying wafer voltage from inflection points are described. One of the methods includes receiving a voltage waveform measured at an output of the nonsinusoidal bias power supply coupled to a plasma chamber in which a substrate is processed. The method includes determining a plurality of inflection points from the voltage waveform. At each of the plurality of inflection points, a change in plasma impedance occurs. The method includes identifying, from the plurality of inflection points, that a wafer voltage at the substrate becomes positive from negative and becomes negative from positive and controlling the nonsinusoidal bias supply based on the wafer voltage.

The invention discloses a plasma-based impedance matching control noise reduction device and method, and belongs to the field of noise reduction. The noise reduction device comprises a corona discharge module, an impedance terminal, a sound pressure monitoring module, a high-voltage power supply module and a control module, the corona discharge module comprises a high-voltage electrode, a low-voltage electrode and an insulating frame; the impedance terminal is tightly connected with the corona discharge module to form a sound absorption cavity; the sound pressure monitoring module is used for monitoring a sound pressure signal; the high-voltage power supply module can simultaneously output high-voltage direct current and high-voltage alternating current; the control module comprises an ADC unit, an FPGA processor and a DAC unit; active sound absorption and noise reduction are carried out through impedance matching control, full-space noise reduction can be achieved, the defect that in the prior art, a quiet area is limited can be overcome, the phenomenon that noise is increased in a local area (except a sound absorption device) is avoided, and meanwhile the situation that the noise reduction effect is poor in severe environments such as high temperature and high humidity can be avoided.

A plasma processing apparatus includes a chamber, a substrate support in the chamber and including a lower electrode, an upper electrode above the substrate support, a source radio-frequency generator that provides a source radio-frequency signal to the upper or lower electrode to generate a plasma in the chamber, an impedance matcher electrically coupled to a transmission line between the source radio-frequency generator and the upper or lower electrode and including a first low-speed matching circuit and a first high-speed matching circuit coupled in parallel, a bias generator that provides a bias signal to the lower electrode, and a controller that causes the first low-speed matching circuit to perform a low-speed matching operation on the source radio-frequency signal in a first period and causes the first high-speed matching circuit to perform a high-speed matching operation on the source radio-frequency signal in a second period following the first period.

The invention discloses a wide-area high-efficiency microwave plasma source, which comprises a rectangular waveguide 1, one end of which is arranged to be of a double-branch structure along a transmission path; the plasma load 5 is respectively connected with the two waveguide transmission paths of the rectangular waveguide 1; the gradient refractive index metamaterial dielectric members 2 are arranged into two groups, and the two groups of gradient refractive index metamaterial dielectric members 2 are respectively embedded in the two waveguide transmission paths of the rectangular waveguide 1; the impedance compression parts 3 are arranged into two groups, the two groups of impedance compression parts 3 are different in length, and the two groups of impedance compression parts 3 are respectively arranged on the two groups of gradient refractive index metamaterial dielectric parts 2 and are used for forming an impedance compression network. Therefore, the influence of plasma impedance change on microwave transmission is reduced, and the microwave plasma stability is improved.