Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Plasma etching method, plasma etching device and RF source system thereof

A plasma and etching device technology, applied in discharge tubes, electrical components, circuits, etc., can solve problems such as radio frequency power fluctuations, affecting plasma stability and processing performance, and not keeping up with instantaneous changes in impedance

Active Publication Date: 2018-07-10
ADVANCED MICRO FAB EQUIP INC CHINA
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in the bias-pulsing condition, the existence of relatively high bias power causes the plasma impedance to change drastically in a short time
For example, when the impedance is matched by source-frequency tuning, the tuning cannot keep up with the instantaneous change of the impedance, thus causing the transmitted RF power to fluctuate
This significantly affects plasma stability and processing performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma etching method, plasma etching device and RF source system thereof
  • Plasma etching method, plasma etching device and RF source system thereof
  • Plasma etching method, plasma etching device and RF source system thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The inventors found that if the specific load pulse (load pulsing) generated by the radio frequency power source (source power) can match or synchronize the pulse of the bias power source (the pulsing of the bias power), then the plasma impedance (plasma impedance ) can be effectively maintained at a stable level / degree, so that the RF power generator (source generator) can always work at a fixed frequency. Correspondingly, stable delivered power can be realized, and repeatable processing results can be guaranteed.

[0023] Figure 1 to Figure 3 A specific embodiment of the present invention is shown. in, figure 1 and figure 2 Demonstrates the generation of technical issues, image 3 shows its solution.

[0024] figure 1 It shows a frequency tuning method of the RF power generator (frequency tuning of the source generator) that is often used in experiments, wherein the forward power of the RF power generator is kept at P1. In step 1, no bias power is applied, a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a plasma etching method, a plasma etching device and an RF source system thereof, wherein the method, the device and the system are used for improving RF power outputting stability. The plasma etching method comprises a plurality of working periods, wherein each period comprises two steps: a first step, applying and keeping a bias power (P) and an RF power (P1); and a secondstep, setting the bias power to zero and simultaneously increasing the RF power (P2). In the period, the frequency of the RF power is unchanged. In a more preferably embodiment, plasma impedance in the period is kept stable.

Description

technical field [0001] The invention relates to a plasma etching method, and also relates to a plasma etching device and a radio frequency source system thereof. Background technique [0002] Among various plasma processing equipment, inductively coupled plasma (ICP, inductively coupled plasma abbreviation) processing device occupies an important position in independent control of ion density and ion energy by virtue of decoupled radio frequency power and bias power (decoupled source and bias power). Great advantage. [0003] However, in a bias-pulsing condition, the existence of relatively high bias power causes the plasma impedance to change drastically in a short time. For example, when a source-frequency tuning method is used to match the impedance, the tuning cannot keep up with the instantaneous change of the impedance, thus causing fluctuations in the transmitted radio frequency power. This significantly affects plasma stability and processing performance. Content...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/321H01J2237/3348
Inventor 赵馗倪图强
Owner ADVANCED MICRO FAB EQUIP INC CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com