33results about How to "Good sputtering performance" patented technology

Disclosed is a manufacturing method of a tungsten target. The manufacturing method of the tungsten target comprises providing a tungsten target blank, wherein the tungsten target blank comprises a sputtering surface and a back surface; rough-grinding the sputtering surface and the back surface through a diamond grinding wheel; performing accurate semi-grinding on the sputtering surface and the back surface through the diamond grinding wheel; performing accurate grinding on the sputtering surface through the diamond grinding wheel. The manufacturing method of the tungsten target can reduce or avoid edge failure of the tungsten target blank during the machining process to obtain the tungsten target high in dimensional precision, low in surface roughness and capable of meeting the sputtering performance, and meanwhile, can reduce losses of tools during the machining process of the tungsten target blank and further reduce the machining cost of the tungsten target.

The invention discloses a manufacturing method of a tungsten-titanium target material and a manufacturing method of a tungsten-titanium combination. The manufacturing method of the tungsten-titanium target material comprises the following steps: filling mixed powder of tungsten powders and titanium powder into a mold; performing cold press molding on the mixed powder to form a tungsten-titanium target material blank; performing vacuum hot pressing sintering on the tungsten-titanium target material blank to form a tungsten-titanium target material. According to the manufacturing method of the tungsten-titanium target material disclosed by the invention, cold press molding treatment and vacuum hot pressing sintering are performed and relevant process parameters are set, so that the density of the prepared tungsten-titanium target material is more than or equal to 99 percent, and the obtained tungsten-titanium target material has a uniform microstructure and superior splashing usability. Meanwhile, the manufacturing methods disclosed by the invention have the advantages of less process steps and high production speed.

The invention relates to a method for preparing a nano compound diamond-like carbon coating, which is realized in a way that: glow discharge is produced by using a medium-frequency magnetic-control sputtering target; argon and excessive hydrocarbon gases are introduced, so that the metal on the target surface reacts with the hydrocarbon gases to produce metallic carbides; when the argon ions bombard the target surface, the target surface sputters the metallic carbides; strong plasma produced by the glow discharge of the target surface ionize the hydrocarbon gases, so that the hydrocarbon gases produce highly-ionized carbon ions; and the carbides sputtered from the target surface and the highly-ionized carbon ions produced from the hydrocarbon gases form a high-hardness carbide-doped nano compound diamond-like carbon coating on a workpiece surface. The coating prepared by the invention has the characteristics of high hardness, strong adhesive force, high growth speed, high production efficiency, low depositing temperature, low production cost, simple equipment structure and the like; and diamond-like carbon coatings with different thicknesses can be prepared on hard alloy, high-speed steel and various other workpieces.

The invention relates to a magnetic confinement magnetron sputtering method and a magnetron sputtering device prepared by use of the same. As the prior art adopts a balanced magnetron sputtering mode and an unbalanced magnetron sputtering mode, the target material utilization rate can only be raised to be between 20 and 35 percent even if permanent magnet movement or the transformation of a plurality of electromagnetic coil sets is adopted, and the prior art has the problems of complex structure and high processing cost. The magnetic confinement magnetron sputtering method forms a magnetic confinement magnetic field with the overall direction parallel to a target surface above the surface of a sputtering target. The magnetron sputtering device manufactured by use of the method comprises a magnet, a magnetic conductor, a substrate and the sputtering target, wherein contrary magnetic poles of the magnet are oppositely fixed on the sides of the sputtering target; the magnetic confinement magnetic field generated by the magnet is positioned between the substrate and the sputtering target, and a connecting line of the two magnetic poles is parallel to the target surface. The magnetron sputtering device can effectively overcome the problem that the prior art is low in target material utilization rate and deposition rate.

A method for manufacturing a single-element matrix cobalt-based granular media alloy composition formulated as Co_{f<sub2>1</sub2>}-(M_uO_v)_{f<sub2>2</sub2>}, M representing a base metal selected from the group consisting of magnesium (Mg), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), nickel (Ni), copper (Cu), zinc (Zn), aluminum (Al), silicon (Si), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), indium (In), lanthanum (La), hafnium (Hf), tantalum (Ta), and tungsten (W), u and v representing the number of atoms of base metal M and oxygen (O) per oxide formula, respectively, and f₁ and f₂ being mole fractions represented by the equation f₁+(u+v)f₂=1. The method includes the steps of blending a Co-M master alloy powder and a Co_u′O_v′ powder into a corresponding (Co_aM_1−a)_{f<sub2>1</sub2>′}-(Co_u′O_v′)_{f<sub2>2</sub2>′} formula, and densifying the blended powders.

The present invention provides a polyimide film having excellent adhesive properties, sputtering property, metal vapor deposition property and metal plating property, and excellent surface smoothness, while maintaining the excellent properties of a polyimide film. Another objective of the present invention is to provide a polyimide film produced by heating a self-supporting film of a polyimide precursor solution onto which a solution containing aluminum chelate compound and, optionally, a nonionic surfactant and/or an aluminum alcoholate compound having at least one alkoxy group is applied to effect imidization.

The invention discloses a preparation method of an indium-tin alloy target material. The preparation method specifically comprises the following steps that metal indium and metal tin are put into a crucible, heated to be melted, and stirred until the melt components are uniform; the melt is subjected to casting and molding to obtain an indium-tin alloy cast ingot; the indium-tin alloy ingot is rolled to obtain an indium-tin alloy blank; the indium tin alloy blank is machined into a rough target blank with the thickness larger than the target size, and the binding face of the rough target blankis machined to be smooth; and a matched back plate and the rough target blank are heated and subjected to heat preservation at the temperature lower than the critical melting point of the rough target blank, then the back plate and the rough target blank are attached and clamped and gradually cooled to the room temperature, and after binding is qualified, the rough target blank is machined to thetarget size. By means of the method, the indium-tin target materials can be rapidly produced in batches, no melting medium exists between the target blank and the back plate, the target blank is highin purity, uniform in grain size and small in granularity, the average granularity ranges from 100 micrometers to 150 micrometers, the component uniformity is good, the indium-tin component deviationis smaller than +/-0.5%, and the sputtering effect is good.

The invention discloses a cadmium telluride thin film solar battery with a composite back electrode and a preparation method of the battery. The solar battery comprises a substrate layer, a window layer, an absorption layer, a back contact layer and a composite back electrode layer in sequence; the window layer adopts the material of cadmium sulfide; the adsorption layer adopts the material of cadmium telluride; the back contact layer adopts the material of copper-doped zinc telluride; and the composite back electrode layer is formed by a molybdenum layer and a nickel vanadium layer. The battery adopts the molybdenum and nickel vanadium composite back electrode structure, so that combination of the thin film interface in the battery can be improved, the interface loss can be lowered, and the collection and transfer capability of the interface current can be improved, thereby further improving photoelectric performance of the battery.

The invention relates to the technical field of machining, and provides a target module and a machining method. The target module comprises a target and a back plate for bearing the target. The surface of the target comprises a front surface and a back surface; the front surface of the target is a sputtering surface of the target; the back surface of the target is opposite to the front surface ofthe target; a first step is projected on the back surface of the target; and the side surface of the first step is an inclined surface. A first groove matched with the first step is formed in the front surface of the back plate; the back surface of the target and the front surface of the back plate are connected through dispersion welding; and the first step is embedded in the first groove. In thedispersion welding process, the back surface of the target is tightly bonded with the front surface of the back plate; and a finally molded target module generates no welding line in the joint position of the two, so that the sputtering performance of the target can be improved, meanwhile, the problem related to the welding line cannot occur in subsequent machining process of the target module, and the quality of the produced target module is improved.

The invention discloses a sputtering target capable of enhancing wear resistance and corrosion resistance of coated glass and a preparation method of the sputtering target . The sputtering target mainly comprises a zirconium based material; the shape and specification of the target are not limited, and a rotating target and a plane target can be manufactured; the rotating target is prepared through the equivalent cold spraying and plasma spraying technology; the plane target is prepared through the following steps: target blocks are prepared through the powder metallurgy technology, and then the target blocks are spliced and bound to form a large-size target; the structure of the target is compact, the components of the target are uniform, and the electrical conductivity of the target is excellent; the density is (5.3-5.9) g/cm3, and the relative density is greater than 90%. The target has excellent sputtering performance, stable arc light, and a sputtering coating rate of (0.5-1.0) nm*m/min. A plated zirconium based film is used as a protective film and has excellent binding force with adjacent films and excellent abrasive resistance and weather fastness; after film coating, glass requires no film protection, can be stored for a long time, facilitates deep processing in different places, effectively prevents coated glass from scratching and scrapping during the follow-up deep-processing process, and requires no film removal of a side before lamination.

Provided is a flux cored wire containing titanium oxides for CO2 gas shielded arc welding. The flux cored wire containing titanium oxides for CO2 gas shielded arc welding comprises C 0.03-0.07%, Mn 1.6-2.0%, Si 0.35-0.7%, Mg 0.5-1.1%, B 0.005-0.02%, Al 0.08-0.3%, Ni 0.7-2.0%, F 0.15-0.35%, titanium oxides 5.5-7.5%, 0.25% or less of at least two non-titanates selected from SiO2, Al2O3 and ZrO2, a balance of Fe and other inevitable impurities. The total content of titanate and non-titanate is controlled below 8.0%, based on the total weight of the flux cored wire. The provided flux cored wire containing titanium oxides for CO2 gas shielded arc welding has superior impact toughness at low thermal temperature and excellent all position welding.

The invention relates to a target rolling method. The target rolling method comprises the steps that a target blank is provided; the target blank is heated to a first temperature; after the target blank is heated to the first temperature, the target blank is calendered; during the calendering process, when the temperature of the target blank decreases to a second temperature, the target blank is heated, and the target blank is heated to the first temperature and then is calendered; and the heating treatment and the calendering treatment are carried out alternately until the target blank is manufactured into a target. According to the target rolling method, the target blank can be prevented from cracking during the calendering process, the rolling quality of the target can be improved, andthe sputtering performance of the target is improved.

The invention discloses a preparation method for an alloy target material and the alloy target material prepared by the preparation method, which relate to the technical field of target materials. According to the technical scheme, the key point is that the preparation method comprises the following steps: S1, preparing alloy powder: selecting two kinds of metal powder, and mixing the powder according to a required proportion, and putting the mixed powder into a powder mixing box; step S2, preparing a base tube: selecting a steel tube as the base tube of the target material, and performing cleaning treatment, sand-blasting treatment and bottoming treatment on the steel tube; S3, feeding the powder mixing box into a spraying spray gun through a powder feeder, and performing secondary mixingand stirring in the spraying spray gun; S4, rotating the base tube of the target material, spraying the mixed powder which is mixed and stirred for a second time onto the surface of the base tube ofthe target material through the spray gun, thereby preparing the target material; and S5, machining the sprayed target material to prepare an alloy target material finished product. According to the preparation method disclosed by the invention, the mixed powder is mixed and stirred uniformly for a second time in the spraying spray gun, so that the proportion of the sprayed-out mixed powder is guaranteed to be unchanged, and therefore, the effect of improving precision of the alloy target material is achieved.

The invention provides a preparation method and application of a tungsten sputtering target blank. The method comprises the following steps: performing cross rolling on a tungsten plate blank to crush columnar crystals, and then performing recrystallization annealing to enable the crystal grains to be equiaxial, wherein the tungsten plate blank is prepared by a chemical vapor deposition method, and the purity of the tungsten plate blank is greater than or equal to 6N. The tungsten sputtering target blank prepared by the method provided by the invention has ideal performance indexes such as purity and density; when the tungsten sputtering target blank is used as a raw material for manufacturing an integrated circuit for vacuum sputtering film formation, the sputtering rate is stable, the film is uniform and consistent, the resistivity of the film is reduced, and the yield of finished products is improved; and meanwhile, the method is high in operability and has a wide application prospect.

The invention provides a vanadium-aluminum alloy target and a preparation method thereof. The target consists of vanadium powder, aluminum powder and a binding agent, wherein the mass ratio of the vanadium powder to the aluminum powder is 19: 1-3: 2; and the purities of the vanadium powder and the aluminum powder are higher than 99.5%. The preparation method comprises the following steps: the vanadium powder and the aluminum powder are weighed out according to a certain proportion, and are fully and uniformly mixed; the binding agent is added in the vanadium powder and the aluminum powder for further uniform mixing to obtain a dry composite powder material of the vanadium and aluminum powders and the binding agent; the plasma spraying operation is performed for the composite powder material in the step (2); and a component obtained by spraying is taken down, and is treated to obtain a finished product. The vanadium-aluminum alloy target is excellent in uniformity and high in stability. The preparation method adopts the plasma spraying mode, is simple and feasible, needs no mold design or expensive pressing equipment, and is convenient to operate; and the prepared target is excellent in sputtering performance, few in impurities and suitable for optical film coating.

The invention relates to a target material manufacturing method which comprises the steps of providing a forge piece target material, wherein the forge piece target material comprises a sputtering surface; and adopting a calendaring process for calendaring the forge piece target material, enabling the calendaring thickness deformation rate of the forge piece target material in the direction perpendicular to the sputtering surface to be 40 percent to 60 percent, and forming a finished product target material, wherein the calendaring thickness deformation rate is a ratio between the thickness variation amount before and after calendaring and the thickness before calendaring. If the calendaring thickness deformation rate is small, the stress accumulation, along the direction perpendicular tothe sputtering surface, in the forge piece target material is small, so that (111) texture aggregation cannot be easily produced in the forge piece target material, the number of the (111) textures can be reduced, the sputtering rate of the formed finished product target material is improved, and the sputtering performance of the finished product target material is improved.