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Manufacturing method of tungsten-titanium target and manufacturing method of tungsten-titanium target combination

A technology of tungsten-titanium target material and manufacturing method, applied in the field of sputtering target material, can solve the problems of unreachable tungsten-titanium target material, high hardness value of tungsten-titanium target material, prone to cracks, etc., and achieves fast production speed and excellent quality. The effect of sputtering performance and productivity improvement

Active Publication Date: 2016-04-06
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Claims
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Problems solved by technology

[0005] In the prior art, the powder metallurgy process is usually used to produce the tungsten-titanium target, but the hardness value of the tungsten-titanium target obtained through the process parameters of the existing powder metallurgy process is relatively high, and cracks are prone to appear, which makes the final tungsten-titanium target The target cannot meet the requirements of tungsten-titanium targets used in semiconductor integrated circuits and solar cells

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  • Manufacturing method of tungsten-titanium target and manufacturing method of tungsten-titanium target combination

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Embodiment Construction

[0029] The invention discloses a method for manufacturing a tungsten-titanium target material. A mixed powder of tungsten powder and titanium powder is loaded into a mold, and then the mixed powder is subjected to cold-press forming treatment to form a tungsten-titanium target material blank, and then The tungsten-titanium target blank is vacuum hot-pressed and sintered to form a tungsten-titanium target. Wherein, the vacuum hot-press sintering treatment includes: evacuating the vacuum hot-press furnace to an absolute pressure below 100 Pa, raising the temperature to 900-1100°C at a heating rate of 5°C / min-10°C / min, and holding the temperature for 60-90min. Then fill in an inert gas until the relative pressure of the vacuum hot pressing furnace is -0.08MPa~-0.06MPa. Finally, pressurize to the maximum pressure at a pressurization rate of 0.1MPa / min~0.4MPa / min, and raise the temperature to the highest temperature at a heating rate of 5°C / min~10°C / min, and the maximum temperature...

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Abstract

The invention discloses a manufacturing method of a tungsten-titanium target material and a manufacturing method of a tungsten-titanium combination. The manufacturing method of the tungsten-titanium target material comprises the following steps: filling mixed powder of tungsten powders and titanium powder into a mold; performing cold press molding on the mixed powder to form a tungsten-titanium target material blank; performing vacuum hot pressing sintering on the tungsten-titanium target material blank to form a tungsten-titanium target material. According to the manufacturing method of the tungsten-titanium target material disclosed by the invention, cold press molding treatment and vacuum hot pressing sintering are performed and relevant process parameters are set, so that the density of the prepared tungsten-titanium target material is more than or equal to 99 percent, and the obtained tungsten-titanium target material has a uniform microstructure and superior splashing usability. Meanwhile, the manufacturing methods disclosed by the invention have the advantages of less process steps and high production speed.

Description

technical field [0001] The invention belongs to the technical field of sputtering targets, in particular to a method for manufacturing a tungsten-titanium target and a method for manufacturing a combination of tungsten-titanium targets. Background technique [0002] Physical Vapor Deposition (PVD, Physical Vapor Deposition) is widely used in high-end industries such as optics, electronics, and information, such as: integrated circuits, liquid crystal displays (LCD, Liquid Crystal Display), industrial glass, camera lenses, information storage, ships, chemicals, etc. The alloy target used in PVD is one of the most important raw materials in the manufacturing process of integrated circuits and liquid crystal displays. [0003] With the continuous development of PVD technology, the demand and quality requirements for alloy targets are increasing day by day. The finer the grains of the alloy target, the more uniform the composition structure, and the smaller the surface roughness...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F3/16C22C27/04C22C1/04C23C14/34C23C14/14
Inventor 姚力军相原俊夫大岩一彦潘杰王学泽宋佳
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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