Indium-tin alloy target material and preparation method thereof

A technology of indium tin alloy and target material, which can be used in metal rolling, metal rolling, metal processing equipment and other directions, and can solve problems such as adverse effects on film properties

Active Publication Date: 2020-10-23
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method will form an indium-tin-copper alloy during the casting process, and the copper in the backpl...

Method used

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  • Indium-tin alloy target material and preparation method thereof
  • Indium-tin alloy target material and preparation method thereof
  • Indium-tin alloy target material and preparation method thereof

Examples

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Embodiment 1

[0034] A kind of indium tin alloy target material, its specification is 1600mm * 200mm * 10mm, and its preparation method is as follows:

[0035] (1) According to the mass ratio of indium ingot: tin ingot = 4:1, put indium ingot and tin ingot with a purity of 4N into a stainless steel crucible with a ratio of opening diameter to height of 0.5, heat and melt at 185°C, and use electromagnetic Stir for more than 5 minutes until the melt composition is uniform;

[0036] (2) Heat the square mold made of stainless steel at 80°C (80-85°C is acceptable), then evenly spray the boron nitride release agent on the inner wall of the square mold, and inject the melt obtained in step (1) into the square mold , demoulding after cooling and forming, and obtaining an indium-tin alloy ingot with a thickness of 42mm;

[0037] (3) rolling the indium-tin alloy ingot obtained in step (2) to a thickness deformation of 20% with a 150-ton hot and cold reversible rolling mill to obtain an indium-tin al...

Embodiment 2

[0041]A kind of indium tin alloy target material, its specification is 1600mm * 200mm * 10mm, and its preparation method is as follows:

[0042] (1) According to the mass ratio of indium ingot: tin ingot = 4:1, put indium ingot and tin ingot with a purity of 4N into a stainless steel crucible with a ratio of opening diameter to height of 0.5, heat and melt at 150°C, and use electromagnetic Stir for more than 5 minutes until the melt composition is uniform;

[0043] (2) Heat a square mold made of stainless steel at 80°C, then evenly spray a boron nitride release agent on the inner wall of the square mold, inject the melt obtained in step (1) into the square mold, and demould after cooling and molding to obtain Indium tin alloy ingots with a thickness of 42 mm;

[0044] (3) rolling the indium-tin alloy ingot obtained in step (2) to a thickness deformation of 20% with a 150-ton hot and cold reversible rolling mill to obtain an indium-tin alloy billet;

[0045] (4) Process the i...

Embodiment 3

[0048] A kind of indium tin alloy target material, its specification is 1600mm * 200mm * 10mm, and its preparation method is as follows:

[0049] (1) According to the mass ratio of indium ingot: tin ingot = 4:1, put indium ingot and tin ingot with a purity of 4N into a stainless steel crucible with a ratio of opening diameter to height of 0.5, heat and melt at 250°C, and use electromagnetic Stir for more than 5 minutes until the melt composition is uniform;

[0050] (2) Heat a square mold made of stainless steel at 80°C, then evenly spray a boron nitride release agent on the inner wall of the square mold, inject the melt obtained in step (1) into the square mold, and demould after cooling and molding to obtain Indium tin alloy ingots with a thickness of 42 mm;

[0051] (3) rolling the indium-tin alloy ingot obtained in step (2) to a thickness deformation of 20% with a 150-ton hot and cold reversible rolling mill to obtain an indium-tin alloy billet;

[0052] (4) Process the ...

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Abstract

The invention discloses a preparation method of an indium-tin alloy target material. The preparation method specifically comprises the following steps that metal indium and metal tin are put into a crucible, heated to be melted, and stirred until the melt components are uniform; the melt is subjected to casting and molding to obtain an indium-tin alloy cast ingot; the indium-tin alloy ingot is rolled to obtain an indium-tin alloy blank; the indium tin alloy blank is machined into a rough target blank with the thickness larger than the target size, and the binding face of the rough target blankis machined to be smooth; and a matched back plate and the rough target blank are heated and subjected to heat preservation at the temperature lower than the critical melting point of the rough target blank, then the back plate and the rough target blank are attached and clamped and gradually cooled to the room temperature, and after binding is qualified, the rough target blank is machined to thetarget size. By means of the method, the indium-tin target materials can be rapidly produced in batches, no melting medium exists between the target blank and the back plate, the target blank is highin purity, uniform in grain size and small in granularity, the average granularity ranges from 100 micrometers to 150 micrometers, the component uniformity is good, the indium-tin component deviationis smaller than +/-0.5%, and the sputtering effect is good.

Description

technical field [0001] The invention belongs to the technical field of thin film materials, and in particular relates to an indium-tin alloy target material and a preparation method thereof. Background technique [0002] With the development of communication technology, 5G communication has begun to be promoted and used. The remarkable feature of 5G signals is that the signal transmission speed is faster, and its transmission speed is 10 to 100 times that of 4G, which greatly facilitates people's lives. [0003] 5G communication uses a spectrum above 3Ghz, and its millimeter wave wavelength is very short. In order to reduce the attenuation of the signal receiving and transmitting process, the shell of the mobile phone is generally made of glass or engineering plastic. However, because consumers prefer metallic luster, for high-end mobile phones, manufacturers will apply magnetron sputtering technology to coat a layer of 1-10 micron film on the mobile phone shell. In this wa...

Claims

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Application Information

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IPC IPC(8): C23C14/35C22C13/00B22C3/00C22C28/00B21B1/46B21B37/16
CPCC23C14/3414C22C13/00B22C3/00C22C28/00B21B1/463B21B37/16B21B2261/04
Inventor 黄宇彬梁振耀童培云朱刘
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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