6results about How to "Good composition uniformity" patented technology

This invention belongs to the field of copper alloy material design and preparation technology, and discloses a new process for efficiently designing high-performance copper-iron alloys. Based on the 5% Fe content vertical cross-sectional characteristics of the Cu-Fe-Si ternary phase diagram, the Si content is designed in stages (0-4%) to achieve targeted performance optimization. Combined with a three-stage heat treatment process of "homogenization-basic aging-gradient aging", a closed-loop system of "phase diagram design-preparation-detection-optimization" is constructed. Through precise composition control by EPMA and real-time feedback of mechanical properties, the problems of blind composition design and insufficient precipitation of strengthening phases in traditional processes are solved. The resulting alloy has excellent tensile strength, yield strength, and total elongation at break, with synergistic improvement in mechanical and magnetic properties, and a design efficiency improvement of more than 40%, making it suitable for electronic, mechanical and other fields.

The application provides a preparation method of a copper-gallium target material, comprising the following steps: taking high-purity copper blocks and high-purity gallium as raw materials to perform vacuum smelting, the content of gallium in the raw materials is 35-55 wt.%, after the smelting is completed, the copper-gallium alloy is obtained by casting into a mold and cooling; the temperature of the vacuum smelting is 800-900 DEG C; the copper-gallium alloy is sprayed to prepare powder, and the copper-gallium alloy powder is obtained; the copper-gallium alloy powder is subjected to hot isostatic pressing and cooling, and the copper-gallium target material is obtained. The copper-gallium target material with high density and good uniformity of components is prepared by the following steps: first, a high-gallium copper-gallium alloy is prepared by using a vacuum casting method, then, alloy powder is prepared by using a gas spraying method, and finally, the copper-gallium target material is prepared by hot isostatic pressing sintering and annealing.

This invention discloses a method for preparing high-purity rare-earth ferrosilicon alloys, belonging to the field of pyrometallurgical technology. Addressing the stringent purity requirements (oxygen content ≤50ppm, sulfur content ≤100ppm) for rare-earth ferrosilicon alloys in high-end manufacturing, and the technical challenges of deep removal of impurities and poor compositional uniformity in existing preparation processes, this invention provides a method for preparing high-purity rare-earth ferrosilicon alloys integrating "deep raw material purification - multi-stage vacuum refining - directional solidification purification - application-oriented compositional control". The method includes: preparing an intermediate alloy using high-purity rare-earth oxides, high-purity silica, and steel scrap as raw materials through carbothermic reduction; placing the intermediate alloy in a vacuum induction melting furnace and performing multi-stage refining under a vacuum of ≤10Pa, selectively removing volatile impurities through segmented temperature control; performing deep deoxidation and desulfurization using composite refining agent injection technology; achieving interfacial segregation separation of impurity elements through directional solidification technology; and finally, performing atmosphere-protected annealing and compositional fine-tuning according to the target application field. Based on the multi-stage synergistic purification mechanism of "thermodynamic selective volatilization-kinetic spray reaction-crystal growth interface segregation", the rare earth ferrosilicon alloy prepared by this invention has an oxygen content of ≤45ppm, a sulfur content of ≤80ppm, and a rare earth element distribution non-uniformity of ≤±2%, which meets the application requirements of high-end fields such as aerospace high-temperature alloys, nuclear reactor control materials, and semiconductor sputtering targets.

This invention discloses a large-size molybdenum-titanium alloy target and its preparation method. The preparation method includes the following steps: S1, selecting raw materials molybdenum powder and titanium powder; S2, granulating the molybdenum powder under inert gas protection to prepare granulated molybdenum powder, wherein the particle size and tap density of the granulated molybdenum powder are matched with those of the titanium powder; S3, mixing the granulated molybdenum powder and titanium powder in a certain proportion under inert gas protection; S4, degassing the mixed powder; S5, hot isostatic pressing to form an ingot; S6, vacuum heat treatment of the ingot to obtain the large-size molybdenum-titanium alloy target. By adding the granulation and forming process of molybdenum powder, the morphology of the raw materials is controlled, effectively suppressing the tendency of the mixed powder to separate in subsequent processing. This method significantly improves the compositional uniformity and batch stability of the molybdenum-titanium alloy target, avoids product defects and scrap due to separation, thereby reducing production costs and improving product qualification rate.

This invention provides a copper-zinc-tin-sulfur-selenium thin film, its preparation method, and a semiconductor device thereof. The preparation method includes: fully dissolving at least one metal source of copper, zinc, tin, sulfur, and selenium in a ligand solvent; then adding a main solvent, other metal sources, and a sulfur or selenium source; and thoroughly mixing to obtain a copper-zinc-tin-sulfur-selenium precursor solution based on a mixed solvent system. The ligand solvent is a small-molecule solvent with carbonyl or amine coordinating groups that provide lone pairs of electrons to metal cations. The precursor solution is then coated onto a substrate surface to prepare a precursor thin film. The precursor thin film is further subjected to post-selenization or post-sulfurization treatment to obtain the copper-zinc-tin-sulfur-selenium thin film. By introducing a small-molecule solvent with specific coordination ability to form discrete metal-ligand structural units with the metal precursor, metal clusters or oxygen bridge network structures are effectively suppressed. High homogenization of the precursor solution is achieved at the molecular scale, significantly improving the thickness and compositional uniformity of the copper-zinc-tin-sulfur-selenium precursor thin film.

This invention relates to the field of lithium-ion battery cathode material technology, specifically a high-performance lithium-rich manganese-based cathode material based on pretreated boron nitride, its preparation method, and its application. The preparation method includes: introducing hydroxyl and amino groups onto the surface of boron nitride nanosheets; preparing a composite precursor powder by mixing a nickel-cobalt-manganese hydroxide precursor, a lithium source, TiO2, a phosphorus source, and pretreated boron nitride; sequentially performing conventional pre-calcination, a first-segment Joule heat treatment, and a second-segment Joule heat treatment; performing a third-segment instantaneous Joule heat treatment, followed by quenching; by introducing a surface-functionalized high thermal conductivity boron nitride network into the bulk phase of the material, and combining a programmed sequential heat treatment of "pre-calcination-two-segment Joule heat treatment" with instantaneous surface melting and quenching, this method effectively solves the inherent thermal gradient problem of the Joule heating method, simultaneously achieving high bulk phase homogenization and surface stabilization, resulting in a product with excellent comprehensive electrochemical performance.