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Preparation method and application of tungsten sputtering target blank

A sputtering target and blank technology, applied in the field of sputtering targets, can solve the problems of low chip yield, unstable sputtering rate, high film resistivity, etc.

Active Publication Date: 2021-07-06
海朴精密材料(苏州)有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The purity of the tungsten sputtering target blank prepared by the above scheme can reach 5N5, and the density is 19.10~19.15g / cm 3 At the same time, when vacuum sputtering is used as a raw material for integrated circuit manufacturing, the sputtering rate is unstable, and the resistivity of the film is higher than the theoretical resistivity, which eventually leads to a low yield rate of the chip. High-performance tungsten sputtering targets are urgently needed material, and the performance of the target depends fundamentally on the performance of the target blank, so the preparation method of the blank still needs further research

Method used

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  • Preparation method and application of tungsten sputtering target blank
  • Preparation method and application of tungsten sputtering target blank
  • Preparation method and application of tungsten sputtering target blank

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The preparation method of the tungsten sputtering target blank of the present embodiment comprises:

[0035] Atmospheric pressure chemical vapor deposition process: WF with electronic grade 99.9995% purity 6 As raw material, 99.9995% pure H 2 As the raw material, red copper is used as the substrate, the deposition temperature is 580°C, and the deposition rate is 0.4mm / h, to obtain a tungsten slab with a length of 380mm, a width of 190mm, and a thickness of 35mm, with a purity of 8N and a density of 19.18g / cm 3 ;

[0036] Heat preservation and cross rolling process: hydrogen furnace heat preservation at 1600°C for 40 minutes, enter the rolling mill along the length direction, first pass, reduction 30%, heat preservation at 1570°C for 30 minutes, second pass, reduction 30%, heat preservation at 1570°C 20 minutes, the rolling direction is turned 90°, the third pass, the reduction is 30%, and the temperature is kept at 1570°C for 10 minutes, the fourth pass, the reduction...

Embodiment 2

[0040] The preparation method of the tungsten sputtering target blank of the present embodiment comprises:

[0041] Atmospheric pressure chemical vapor deposition process: WF with electronic grade 99.9995% purity 6 As raw material, 99.9995% pure H 2 As the raw material, red copper is used as the substrate, the deposition temperature is 550°C, and the deposition rate is 0.3mm / h. A tungsten slab with a length and width of 240mm and a thickness of 35mm is obtained, with a purity of 8N and a density of 19.21g / cm 3 ;

[0042]Heat preservation and cross rolling process: hydrogen furnace heat preservation at 1580°C for 40 minutes, enter the rolling mill along the length direction, first pass, reduction 30%, heat preservation at 1580°C for 30 minutes, second pass, reduction 30%, heat preservation at 1580°C 20 minutes, the rolling direction is turned 90°, the third pass, the reduction is 30%, and the temperature is kept at 1580°C for 10 minutes, the fourth pass, the reduction is 30%,...

Embodiment 3

[0046] The difference between the preparation method of the tungsten sputtering target blank of this embodiment and that of Embodiment 1 is that the rolling process is different. Specifically, the rolling process of this embodiment includes: a hydrogen furnace at 1600 ° C for 40 minutes, entering the rolling mill along the length direction, The first pass, the reduction is 30%, 1570°C for 30min, the second pass, the reduction is 20%, 1570°C for 20min, the third pass, the reduction is 10%, 1570°C for 10min, the 4th pass Pass times, the reduction amount is 10%.

[0047] see figure 2 and Figure 5 ,and Figure 6 , compared with Example 1, the microstructure uniformity of the tungsten sputtering target blank prepared in this example is significantly poorer, and the mechanical properties are also significantly reduced.

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Abstract

The invention provides a preparation method and application of a tungsten sputtering target blank. The method comprises the following steps: performing cross rolling on a tungsten plate blank to crush columnar crystals, and then performing recrystallization annealing to enable the crystal grains to be equiaxial, wherein the tungsten plate blank is prepared by a chemical vapor deposition method, and the purity of the tungsten plate blank is greater than or equal to 6N. The tungsten sputtering target blank prepared by the method provided by the invention has ideal performance indexes such as purity and density; when the tungsten sputtering target blank is used as a raw material for manufacturing an integrated circuit for vacuum sputtering film formation, the sputtering rate is stable, the film is uniform and consistent, the resistivity of the film is reduced, and the yield of finished products is improved; and meanwhile, the method is high in operability and has a wide application prospect.

Description

technical field [0001] The invention relates to the technical field of sputtering targets, in particular to a preparation method and application of a tungsten sputtering target blank. Background technique [0002] Sputtering is the use of particles of a certain energy (ions or neutral atoms, molecules) to bombard the surface of the target, so that the atoms or molecules on the surface of the target obtain enough energy to finally detach from the target and deposit on the surface of the substrate, forming a micron-scale ( Even nanoscale) thin films are currently widely used thin film preparation methods. The sputtering target is the object of particle bombardment and is the raw material for sputtering thin films, which largely determines the performance, preparation efficiency and product yield of thin films. As an advanced thin film material preparation technology, sputtering is widely used in modern high-tech fields such as microelectronics and optoelectronics. [0003] T...

Claims

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Application Information

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IPC IPC(8): C23C14/34B23P15/00C21D1/26C21D8/02C22F1/18C23C16/14C23C16/56
CPCC23C14/3414C23C16/14C23C16/56C21D1/26C22F1/18C21D8/0247C21D8/0226C23C14/3407B23P15/00
Inventor 谭成文于晓东李迅刘丽君张清聂志华
Owner 海朴精密材料(苏州)有限责任公司
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