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A kind of preparation method of vanadium-tungsten alloy target blank

A technology of alloy target and vanadium tungsten, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of complex preparation process and poor density, and achieve the goal of avoiding abnormal discharge and excellent sputtering performance Effect

Active Publication Date: 2022-04-12
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the above preparation method still has problems such as the need to add other reagents during the preparation process, the preparation process is complicated, or the density is poor.

Method used

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  • A kind of preparation method of vanadium-tungsten alloy target blank
  • A kind of preparation method of vanadium-tungsten alloy target blank
  • A kind of preparation method of vanadium-tungsten alloy target blank

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Embodiment 1

[0040] The invention provides a method for preparing a vanadium-tungsten alloy target blank, wherein the vanadium-tungsten alloy target blank includes: 11% W, and the balance is vanadium;

[0041] Described preparation method comprises the steps:

[0042] (1) Mix vanadium powder and tungsten powder according to the formula, and then put them into the mold;

[0043] (2) putting it into a furnace and vacuuming it, and then performing hot pressing and sintering to obtain the vanadium-tungsten alloy target blank.

[0044] The mixing method in step (1) is dry mixing, and the mass ratio of zirconia balls and powder in the mixing is 1:10; the mixing time is 24h; the particle size of the vanadium powder is <74 μm; the The particle size of the tungsten powder is 2-2.5 μm;

[0045] The end point of the vacuum described in step (2) is evacuated to an absolute vacuum of 40Pa; the hot press sintering includes heating up to a constant temperature at 12°C / min and keeping it warm, and then ...

Embodiment 2

[0048] The invention provides a method for preparing a vanadium-tungsten alloy target blank, wherein the vanadium-tungsten alloy target blank includes: 19% W, and the balance is vanadium;

[0049] Described preparation method comprises the steps:

[0050] (1) Mix vanadium powder and tungsten powder according to the formula, and then put them into the mold;

[0051] (2) putting it into a furnace and vacuuming it, and then performing hot pressing and sintering to obtain the vanadium-tungsten alloy target blank.

[0052] The mixing method in step (1) is dry mixing, the mass ratio of zirconia balls and powder in the mixing is 2:10; the mixing time is 25h; the particle size of the vanadium powder is <55 μm; the The particle size of the tungsten powder is 2.7-3 μm;

[0053] The end point of the vacuum described in step (2) is evacuated to an absolute vacuum of 20Pa; the hot pressing sintering includes heating to a constant temperature at 10°C / min and keeping it warm, and then heat...

Embodiment 3

[0056] The invention provides a method for preparing a vanadium-tungsten alloy target blank, wherein the vanadium-tungsten alloy target blank includes: 15% W, and the balance is vanadium;

[0057] Described preparation method comprises the steps:

[0058] (1) Mix vanadium powder and tungsten powder according to the formula, and then put them into the mold;

[0059] (2) putting it into a furnace and vacuuming it, and then performing hot pressing and sintering to obtain the vanadium-tungsten alloy target blank.

[0060] The mixing method in step (1) is dry mixing, and the mass ratio of zirconia balls and powder in the mixing is 1.2:10; the mixing time is 26h; the particle size of the vanadium powder is <35 μm; the The particle size of the tungsten powder is 2.5-3 μm;

[0061] The end point of the vacuum described in step (2) is evacuated to an absolute vacuum of 10 Pa; the hot press sintering includes heating up to a constant temperature at 15°C / min and keeping it warm, and th...

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Abstract

The invention relates to a method for preparing a vanadium-tungsten alloy target blank. The vanadium-tungsten alloy target blank includes: 11-19% W in terms of mass percentage, and the balance is vanadium; the preparation method includes the following steps: (1 ) mixing vanadium powder and tungsten powder according to the formula, and then putting them into a mould; (2) putting them into a furnace and evacuating, and then performing hot-press sintering to obtain the vanadium-tungsten alloy target blank. The preparation method provided by the present invention realizes the preparation of a vanadium-tungsten alloy target blank with a density ≥ 98.79% by redesigning the proportion of vanadium and tungsten in the target blank and using a specific sintering process. The target material prepared by using the target blank When sputtering, it has excellent sputtering performance, and abnormal discharge can be avoided during the sputtering process.

Description

technical field [0001] The invention relates to the field of target material preparation, in particular to a method for preparing a vanadium-tungsten alloy target blank. Background technique [0002] In recent years, with the development of domestic infrared detection and other industries, the demand for high-purity vanadium-tungsten targets has increased significantly. At present, the density of domestically produced vanadium-tungsten targets is low, which cannot meet the quality requirements of the high-end electronics industry. Only some of them are used. in low-end products. At present, only a few developed countries and regions in the United States can produce high-purity and high-density vanadium-tungsten targets. Research and development of vanadium-tungsten target production technology is a powerful means to break foreign monopoly and reduce the cost of the microelectronics industry. [0003] Such as CN104946950A a vanadium-tungsten alloy target and its preparation ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C27/02C22C1/04B22F3/14C23C14/34
CPCC22C27/025C22C1/045B22F3/14C23C14/3414
Inventor 姚力军边逸军潘杰王学泽李苛
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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