3results about How to "Fully warmed up" patented technology

The invention discloses a circulating fixed bed. The circulating fixed bed is used for circularly producing a carbon material and comprises a temperature control body, at least one temperature control section reactor and a controller, the reactor is at least partially located in the temperature control body, and the temperature control body controls the temperature of each temperature control section reactor; the reactor comprises a rotating body and pipes AB, the pipes AB comprise a pipe A and a pipe B, and the pipe A and the pipe B are arranged in a sleeving mode and move relatively; and the controller controls materials to enter the A pipe and the B pipe to react to generate a carbon material, the controller controls the rotating body to rotate to drive the A pipe to rotate relative to the B pipe so as to feed and discharge the material, and the A pipe forms different angles relative to the B pipe in cycles so as to achieve cyclic production of the carbon material. The problems of energy conservation, environmental protection, high yield and homogenization in the prior art can be solved.

The application discloses a single-chip vapor deposition device and system, which comprises a base, an at least partially liftable baffle arranged around the base and surrounding a process chamber during a film forming process, a process gas inlet mechanism arranged on one side of the process chamber for supplying process gas, an exhaust port arranged in the process chamber, the exhaust port and the process gas inlet mechanism being arranged on opposite sides of the single-chip vapor deposition device, a wafer transfer port arranged on a side of the single-chip vapor deposition device different from the side where the process gas inlet mechanism and the exhaust port are arranged, and the baffle being provided with a first opening only on a side close to the process gas inlet mechanism, process gas flowing into the process chamber through the first opening, flowing horizontally on the surface of a substrate and epitaxially forming a film, and at least part of process gas not participating in a reaction and reaction byproducts being discharged from the exhaust port. The application can reduce the long velocity difference of process gas at the front and back of a substrate, so as to improve the crystal quality and film thickness uniformity of an epitaxial layer.

The application discloses an inner heat type palladium membrane purifier, which comprises an outer shell and an inner shell, a heat preservation layer is filled between the outer shell and the inner shell, the inner shell comprises a diffusion chamber and a preheating chamber, the palladium membrane purifier further comprises a heating pipe which is inserted into the diffusion chamber, the heating pipe is internally provided with an electric heating element, a palladium alloy pipe is spirally wound outside the heating pipe, one end of the diffusion chamber is provided with an end face flange, the end face flange is provided with a pure hydrogen interface and a tail gas interface, the pure hydrogen interface is communicated with the diffusion chamber and the outside of the outer shell, the tail gas interface is connected with one end of the palladium alloy pipe, the other end of the palladium alloy pipe is connected with a raw material gas preheating coil pipe, the other end of the preheating coil pipe is extended out of the outer shell and is provided with a raw material hydrogen interface, and the palladium membrane purifier further comprises a temperature measuring sleeve pipe. The hydrogen purifier disclosed by the application has the advantages of compact layout, small device volume, few welding points of a palladium membrane assembly, reliable process, long service life, uniform heating temperature of the device, small heat loss, high purification and separation efficiency of hydrogen, and large gas processing capacity per unit volume.