Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for refining crystal grains in ultra-pure copper or copper alloy

A technology of copper alloy and pure copper, which is applied in the direction of metal extrusion control equipment, metal extrusion, metal extrusion die, etc., can solve the problems of many impurities, unstable sputtering, poor sputtering film, etc., and achieve thin film deposition High rate, low plasma impedance, and the effect of improving grain refinement

Active Publication Date: 2021-03-09
KONFOONG MATERIALS INTERNATIONAL CO LTD
View PDF6 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Although the above method discloses the use of equal angular extrusion to achieve grain refinement, it also introduces other processing processes, which will cause too many impurities when high-purity copper or high-purity copper alloy is used as the target material, resulting in spattering. Unstable sputtering and poor sputtering film during sputtering

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for refining crystal grains in ultra-pure copper or copper alloy
  • Method for refining crystal grains in ultra-pure copper or copper alloy
  • Method for refining crystal grains in ultra-pure copper or copper alloy

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] The invention provides a method for refining crystal grains in ultra-high-purity copper. The refining method includes: heating an ultra-high-purity copper billet, and then sequentially performing the first equal-angle extrusion and the second equal-angle extrusion. extrusion, such as Figure 9 shown;

[0045] The ultra-high-purity copper billet is obtained by hot extrusion, and the end temperature of preheating before hot extrusion is 820°C;

[0046] The end point temperature of the heating is 222°C;

[0047] The inner angle of the extrusion die in the first equal radial angular extrusion is 88°, and the outer die angle is 17°;

[0048] The number of extrusion passes in the first equal radial angular extrusion is 6 times;

[0049] The inner angle of the extrusion die in the second equal radial angular extrusion is 100°, and the outer die angle is 30°;

[0050] The number of extrusion passes in the second equal radial angular extrusion is 9 times;

[0051] After any...

Embodiment 2

[0054] The invention provides a method for refining crystal grains in an ultra-high-purity copper alloy. The refining method includes: heating an ultra-high-purity copper alloy billet, and then sequentially performing the first equal-diameter angular extrusion and the second etc. radial extrusion;

[0055] The ultra-high-purity copper alloy billet is obtained by forging;

[0056] The end temperature of the heating is 200°C;

[0057] The inner angle of the extrusion die in the first equal radial angular extrusion is 85°, and the outer die angle is 20°;

[0058] The number of extrusion passes in the first equal radial angular extrusion is 4 times;

[0059] In the second equal radial extrusion, the inner angle of the extrusion die is 110°, and the outer die angle is 36°;

[0060] The number of extrusion passes in the second equal radial angular extrusion is 8 times;

[0061] After any pass of extrusion in the extrusion, the ultra-high-purity copper or copper alloy is rotated ...

Embodiment 3

[0064] The invention provides a method for refining crystal grains in ultra-high-purity copper. The refining method includes: heating an ultra-high-purity copper billet, and then sequentially performing the first equal-angle extrusion and the second equal-angle extrusion. extrusion;

[0065] The ultra-high-purity copper billet is obtained by hot extrusion, and the end temperature of preheating before hot extrusion is 900°C;

[0066] The end temperature of the heating is 180°C;

[0067] The inner angle of the extrusion die in the first equal radial angular extrusion is 80°, and the outer die angle is 25°;

[0068] The number of extrusion passes in the first equal radial angular extrusion is 5 times;

[0069] The inner angle of the extrusion die in the second equal radial angular extrusion is 120°, and the outer die angle is 33°;

[0070] The number of extrusion passes in the second equal radial angular extrusion is 4 times;

[0071] After any pass of extrusion in the extrus...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for refining crystal grains in ultra-pure copper or copper alloy. The refining method comprises the steps of: heating an ultra-pure copper or copper alloy blank; andthen sequentially carrying out first equal channel angular pressing and second equal channel angular pressing. According to the method provided by the invention, by adopting the specific equal channelangular pressing process, crystal grains are refined to the specification of below 5mum so as to ensure that a target material has good sputtering performance when being sputtered by adopting the refined ultra-pure copper or copper alloy; and furthermore, by the refining method, when in use, the target material is low in plasma impedance, high in thin film deposition rate and good in thin film thickness uniformity.

Description

technical field [0001] The invention relates to the field of grain refining, in particular to a method for refining grains in ultra-high-purity copper or copper alloys. Background technique [0002] At present, with the rapid development of ultra-large-scale integrated circuits, the size of semiconductor chips has been reduced to the nanometer level, and the RC delay and electromigration of metal interconnections have become the main factors affecting chip performance. Traditional aluminum and aluminum alloy interconnections It has been unable to meet the requirements of VLSI process. Compared with aluminum, copper has higher resistance to electromigration and higher electrical conductivity, especially ultra-high-purity copper or ultra-high-purity copper alloy (purity ≥ 6N), which is helpful for reducing the resistance of chip interconnection lines and improving its operation. Speed ​​matters. [0003] The grain size and grain orientation of the target have a great influen...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B21C23/00B21C25/02B21C29/00B21C31/00C22F1/08
CPCB21C23/002B21C25/02B21C29/003B21C31/00C22F1/08Y02P10/20
Inventor 姚力军边逸军潘杰王学泽慕二龙曹欢欢
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com