Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

A kind of vanadium-silicon alloy target material and preparation method thereof

A silicon alloy and target technology, applied in the field of vanadium-silicon alloy target material and its preparation, can solve the problems affecting the stability of thin film sputtering preparation, failure to obtain vanadium-silicon alloy target, target density and structural fluctuations, etc. , to achieve the effect of simple powder making method, good sputtering performance and good uniformity

Active Publication Date: 2018-07-06
深圳市威勒科技股份有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The so-called hot melting method is to melt the required ratio of vanadium silicon and then cool it to obtain an alloy target. From the phase diagram of silicon and vanadium alloy, it can be known that the maximum doping amount of silicon is about 5%, which cannot meet the requirements of large doping amount in practical applications. At the same time, the melting points of vanadium and silicon are different, and the density is very different, so it is impossible to obtain a uniform vanadium-silicon alloy target, and due to the cooling process from the molten state to the solid state, the temperature of the target from the inside to the outside is a large gradient Changes, so there is a large non-uniformity in the structure of the target, which affects the VO 2 Stability in thin film sputtering preparation
The powder hot pressing method is to uniformly mix vanadium-silicon powders in a certain mass ratio and then form a vanadium-silicon alloy target by hot pressing and vacuum sintering. Although it can obtain a uniformly mixed target, the pressing process of this method requires the design of a special mold. The porosity is high, and the service life of the target is short, so that the cost of film preparation is high, and due to the influence of various factors in hot pressing, different batches of targets have large fluctuations in density and structure, which affects the film preparation process Medium sputtering yield, ultimately affecting VO 2 Film properties

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of vanadium-silicon alloy target material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Step 1: Use vanadium powder with a particle size of 50-300um and a purity greater than 99.5%, and then calculate according to the vanadium-silicon mass ratio of 95:5-60:40, add silicon powder with a particle size of 30-150um and a purity greater than 99.5%, and roll Mix with the mixer, set the speed at 60-100r / min, and the duration is about 0.5-2h. The main function of this step is to fully mix the vanadium powder and silicon powder for the next step of mixing with the binder. Be prepared, because the binder is viscous, if the vanadium powder and silicon powder are directly mixed with the binder, the vanadium powder and silicon powder cannot be mixed.

[0025] Step 2: Put the above-mentioned vanadium-silicon composite powder into the ball milling tank of the centrifugal ball mill, add 200-300ml and 0.5-0.75kg of ethanol into the ball milling tank, and grind for 4-24 hours at 100-300r / min under an argon atmosphere, and put The ground powder is taken out and placed in a f...

Embodiment 2

[0031] Step 1: Use vanadium powder with a particle size of 50-150um and a purity of 99.5-99.9%, and then calculate according to the mass ratio of vanadium to silicon of 95:5-60:40, add the corresponding quality of silicon powder (particle size 5-20um), and use a drum mixer Mix well, the speed is 60~100r / min, and the time is 0.5~2h. The effect of this step is the same as that of step 1 in Example 1.

[0032] Step 2: Weigh the alkyd varnish, measure 200# gasoline, the volume ratio of the two is 1:30~3:30, add the two into the mixer, set the speed of the mixer at 60~100r / min, and stir for 15min~ 30min prepared into a binder for use. The binder prepared in this step is durable and has strong viscosity, and can strongly bind vanadium powder and silicon powder together.

[0033] Step 3: Put the composite powder in step 1 into the mixer, pour the binder prepared in step 2, start the mixer, set the stirring speed to 60~100r / min, and the time is 1~3h, the stirring process will Sligh...

Embodiment 3

[0040] Step 1: Use vanadium powder with a particle size of 5-20um and a purity greater than 99.5%, and then calculate according to the vanadium-silicon mass ratio of 95:5-60:40, add silicon powder with a purity greater than 99.5% and a particle size of less than 10um, and roller mix Mix with the material machine, the speed is 60-100r / min, and the time is 0.5-2h. The effect of this step is the same as that of step 1 of Examples 1 and 2.

[0041] Step 2: Put the above-mentioned vanadium-silicon composite powder into the ball mill tank of a centrifugal ball mill, add 200-300ml of ethanol and 0.5-0.75kg of hard alloy balls into the ball mill tank, and grind at 100-300r / min under an argon atmosphere for 4 ~24h, take out the ground powder and place it in the fume hood for 10~30mins. The effect of this step is the same as that of step 2 of Example 1.

[0042] Step 3: Put the composite powder in step 2 into a blender, add 1.25-12.5 parts of polyethylene glycol PEG400, 12-96 parts of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a vanadium-silicon alloy target and a preparation method thereof. The target is made of vanadium powder, silicon powder and a binder, wherein the mass ratio of vanadium powder to silicon powder is 19:1-3:2 , the purity of the vanadium powder and silicon powder is greater than 99.5%. The preparation method comprises the following steps: weighing vanadium powder and silicon powder in proportion, and fully mixing the two; adding the mixed vanadium powder and silicon powder to a binder for further mixing, and processing to obtain dry vanadium silicon powder Composite powder material with binder; performing plasma spraying operation on the composite powder material in step (2); removing the sprayed component, and processing the component to obtain a finished product. The vanadium-silicon alloy target material of the invention has good uniformity and high stability. The preparation method of the invention adopts the plasma spraying method, which is simple and easy, does not need mold design and expensive pressing equipment, is convenient to operate, and the prepared target material has excellent sputtering performance and less impurities, and is suitable for optical coating.

Description

technical field [0001] The invention relates to a material and a preparation method thereof, in particular to a vanadium-silicon alloy target material and a preparation method thereof. Background technique [0002] Vanadium dioxide (VO 2 ) thin film is a vanadium oxide thin film with unique phase transition characteristics. It exhibits semiconducting properties at low temperature and high infrared transmittance, while it exhibits metallic properties after high temperature phase transition and high reflectivity to infrared. Therefore, vanadium dioxide thin films have very broad application prospects in the fields of intelligent energy-saving windows and optical switches. VO 2 There are many methods for thin film preparation, among which reactive magnetron sputtering technology is the VO 2 The most commonly used preparation technique for thin film preparation. in VO 2 In the preparation process of thin film reactive magnetron sputtering, the vanadium-silicon alloy target ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C22C27/02C22C1/05B22F3/115
Inventor 徐玄顾进跃顾伟华李巧梅马辉
Owner 深圳市威勒科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products