Indium tin oxide (ITO)-free quantum light emitting diode (QLED) and fabrication method thereof

A polyelectrolyte layer, non-conjugated technology, applied in the field of ITO-free QLED and its preparation, can solve the problems of limited long-term promotion and application, small light output area, high production cost, etc., to improve luminous efficiency, increase light output area, The effect of improving the service life

Active Publication Date: 2015-12-09
TCL CORPORATION
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Problems solved by technology

[0005] The purpose of the present invention is to provide a QLED that does not contain ITO, aiming to solve the problems of high production cost, limited long-term popularization and application, and poor flexibility due to the limited resources of metal indium in the existing ITO-containing QLED. Most of the existing ITO-containing QLEDs are bottom-emitting QLEDs, which leads to the problem of small light emitting area

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  • Indium tin oxide (ITO)-free quantum light emitting diode (QLED) and fabrication method thereof
  • Indium tin oxide (ITO)-free quantum light emitting diode (QLED) and fabrication method thereof
  • Indium tin oxide (ITO)-free quantum light emitting diode (QLED) and fabrication method thereof

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Embodiment Construction

[0018] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0019] combine Figure 1-2 , the embodiment of the present invention provides an ITO-free QLED, including a substrate carrier 1, a cathode layer 2, a first non-conjugated polyelectrolyte layer 3, an electron injection layer 4, a quantum dot light-emitting layer 5, The hole transport layer 6, the hole injection layer 7 and the anode layer 8, wherein the material of the anode layer 8 is PEDOT:PSS (PH1000).

[0020] Specifically, in the embodiment of the present invention, in order to ensure good electrical conductivity of the electrode while avoiding the use of ITO,...

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Abstract

The invention is applicable for the field of a quantum dot light emitting diode (QLED), and provides an indium tin oxide (ITO)-free QLED and a fabrication method thereof. The ITO-free QLED comprises a substrate carrier, a cathode layer, a first non-conjugated polyelectrolyte layer, an electron injection layer, a quantum dot light emitting layer, a hole transfer layer, a hole injection layer and an anode layer which are sequentially laminated, wherein the material of the anode layer is PEDOT:PSS (PH1,000). According to the fabrication method of the ITO-free QLED, the cathode layer, the first non-conjugated polyelectrolyte layer, the electron injection layer, the quantum dot light emitting layer, the hole transfer layer, the hole injection layer and the anode layer are sequentially fabricated on the substrate carrier.

Description

technical field [0001] The invention belongs to the field of quantum dot light-emitting diodes, in particular to an ITO-free QLED and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diode (QLED), as an emerging high-efficiency electroluminescent device, has received extensive attention in recent years, and the working principle of QLED is very close to that of organic light-emitting diode (OLED). The difference is that, in terms of light-emitting materials, the light-emitting layer material of OLED is an organic molecule with a conjugated structure, while the light-emitting layer of QLED is composed of inorganic nanoparticles with a size of several nanometers. Due to the use of inorganic materials as the light-emitting layer, QLED has a longer service life than OLED. In addition, in terms of display effect, the performance of QLED is superior to that of OLED. In addition, the quantum dot light-emitting layer in QLED can be prepared by...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/54H01L51/56
CPCH10K85/141H10K50/171H10K50/81H10K50/82H10K2102/00H10K71/00
Inventor 肖标付东谢相伟
Owner TCL CORPORATION
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