37results about How to "Increase voltage margin" patented technology

A non-volatile ferroelectric memory device senses a cell data at high speed. Preferably, the non-volatile ferroelectric memory device includes a plurality of cell array blocks, a plurality of sense amplifier units, a plurality of sense amplifier units, a plurality of local data buses, a global data bus, and a plurality of data bus switch arrays. Each of the plurality of cell array blocks has a hierarchical bit line architecture including sub bit lines and a main bit line group corresponding to a plurality of unit cells for storing differential data. The plurality of sense amplifier units, corresponding one-by-one to the cell array blocks, sense and amplify the differential data induced on the main bit line group during a sensing operation. The plurality of local data buses, corresponding one-by-one to the sense amplifier units, transfer the differential data outputted from the sense amplifier units and differential data to be transferred to the sense amplifier units. The global data bus, shared by a plurality of the local data buses, transfers the differential data. The plurality of data bus switch arrays selectively couple the local data buses to the global data bus.

According to a plasma display apparatus of the present invention, at least in one sub-field, a driving signal applied to retain data written in each pixel has a frequency applied first and a frequency applied thereafter, the frequencies being different from each other. The first frequency is controlled to be low and the frequency thereafter is controlled to be high, for example (two-frequency driving method). With a first low-frequency pulse, initial discharge in a sustaining period is started stably, and with a high-frequency pulse thereafter, the discharge is sustained. Use of the high-frequency pulse increases the number of light emissions, thus leading to improvement in brightness. Thus, the present invention enables both discharge stabilization and increase in brightness, and can therefore improve picture quality of the plasma display apparatus.

A non-volatile semiconductor memory having a memory transistor including a stacked-layer film formed between a semiconductor substrate and a gate electrode and having a charge storage ability, a first conductivity type region of the semiconductor substrate in which a channel is formed under the control of the gate electrode via the stacked-layer film, and two second conductivity type regions formed at the semiconductor substrate sandwiching the first conductivity type region therebetween, the memory transistor having a channel length L which is between channel lengths L1 and L2. with the channel length L1 being estimated as the boundary of occurrence of a short channel effect at the time of a write operation and the channel length L2 the time of a read operation, with the channel length L1 being different from the channel length L2.

According to a plasma display apparatus of the present invention, at least in one sub-field, a driving signal applied to retain data written in each pixel has a frequency applied first and a frequency applied thereafter, the frequencies being different from each other. The first frequency is controlled to be low and the frequency thereafter is controlled to be high, for example (two-frequency driving method). With a first low-frequency pulse, initial discharge in a sustaining period is started stably, and with a high-frequency pulse thereafter, the discharge is sustained. Use of the high-frequency pulse increases the number of light emissions, thus leading to improvement in brightness. Thus, the present invention enables both discharge stabilization and increase in brightness, and can therefore improve picture quality of the plasma display apparatus.

A semiconductor memory device includes memory modules which have memories and a data bus which transfers data to the memory modules, in which the data bus comprises a low frequency band data pass unit which removes the high frequency component of the data and sends the data to the memory modules. The low frequency band data pass unit comprises a plurality of stubs which are connected to the data bus in parallel and are formed as printed circuit board (PCB) patterns. The low frequency band data pass unit comprises a plurality of plates that are connected to the data bus in parallel and are formed as PCB patterns. The low frequency band data pass unit has a shape in which parts having a wide width and parts having a narrow width are alternately connected. Therefore, without adding a separate passive device, the semiconductor memory device reduces the high frequency noise of data transferred through a data bus such that the voltage margin of the data improves, the cost for passive devices such as capacitors, is reduced, and the process for attaching the passive devices is simplified.

The present invention provides a transconductance amplifier comprising an input circuit, a gain circuit and an output circuit which are successively connected. The gain circuit comprises a MOS transistor array composed of a plurality of MOS transistors, grids of the corresponding MOS transistors between every two adjacent columns of the MOS transistor array are connected, the MOS transistors in each column of the MOS transistors are successively connected, and compensation capacitors are arranged between asymmetrical connection points of the MOS transistors in the output column of the MOS transistor array and an output terminal of the output circuit. According to the transconductance amplifier, compared with a traditional frequency compensation technology, dominant pole frequency of the transconductance amplifier can be reduced through increasing capacitance values of the compensation capacitors, right half plane zero frequency of the transconductance amplifier can also be prevented from being reduced, so that a distance between the dominant pole frequency and the right half plane zero frequency of the transconductance amplifier can be increased, the influence of frequency compensation on frequency characteristics of the transconductance amplifier can be reduced, unity-gain bandwidth of the transconductance amplifier can be improved, and the problem that the transconductance amplifier is possibly unstable can be solved.