Silicon carbide power semiconductor module device integrated with buffer circuit

Abstract

The invention provides a silicon carbide power semiconductor module device integrated with a buffer circuit. An active buffer circuit is integrated in a single-phase half-bridge, single-phase full-bridge or three-phase bridge type silicon carbide power semiconductor module, so that the switching loss of the silicon carbide power semiconductor module can be reduced, the oscillation and damping loss can be reduced, the voltage peak can be reduced, the silicon carbide power semiconductor module can work at a higher voltage, or a low-voltage-grade chip is selected to reduce the conduction loss, and the efficiency of the silicon carbide power electronic system is improved.

Description

technical field [0001] The present application relates to the technical field of silicon carbide power semiconductor devices, in particular to a silicon carbide power semiconductor module device with an integrated buffer circuit. Background technique [0002] Silicon carbide power semiconductor modules are widely used in half-bridge circuits, full-bridge circuits and three-phase bridge circuits ( Figure 1 ~ Figure 3 ), due to the serious electromagnetic interference and noise caused by high-speed switching of SiC MOSFETs, the parasitic inductance of SiC power semiconductor modules will bring high oscillation and voltage spikes. Integrating packaged passive snubber circuits in SiC power semiconductor modules such as Figure 4 As shown, the oscillation and voltage spikes of three-phase SiC power semiconductor modules can be reduced, thereby improving the efficiency and reliability of SiC power electronic systems. However, the passive snubber circuit is packaged in the silico...

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Problems solved by technology

However, the passive snubber circuit is packaged in the SiC power semiconductor module, which will cause a voltage drop when the SiC power semiconductor module is turned on, resulting in longer turn-on time and higher turn-on loss

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