The invention discloses a bi-band
detector based on
indium selenide and
gallium nitride and a preparation method thereof, and mainly solves the problem that simultaneous same-position detection in the prior art is impossible. The bi-band
detector comprises a substrate (1), a
UV absorption layer (2), an insulating layer (3), an
infrared absorption layer (22) and two ohmic electrodes (4, 5), wherein the
UV absorption layer is positioned on the substrate, the insulating layer is positioned on the
left half plane of the
UV absorption layer, a step surface is formed on the
right half plane of the UV
absorption layer, the
left half portion of the
infrared absorption layer is positioned on the insulating layer, the right half portion of the
infrared absorption layer is positioned on the step surface of the UV absorption layer, the
left half portion has a smaller area than the insulating layer, the right half portion has a smaller area than the step surface, a first ohmic
electrode is positioned on the infrared absorption layer and has an area greater than the infrared absorption layer and smaller than the insulating layer, and the second ohmic
electrode is positioned on the step surface of the UV absorption layer. The bi-band
detector allows simultaneous UV and infrared bi-band detection, and improves the performance and detection efficiency of a detection
system.