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Low temp chemical gaseous deposition for preparing silicon nitride thin film

A technology of vapor phase deposition and low-temperature chemistry, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as difficult film deposition and thermal CVD application limitations, and achieve the effect of improving conversion efficiency

Inactive Publication Date: 2006-09-20
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] It is difficult for silicon sources such as general silane or silicon halide compounds to realize SiN at a temperature lower than 800°C. x The deposition of thin films, which makes the application of thermal CVD in the field of microelectronic semiconductors is greatly limited

Method used

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  • Low temp chemical gaseous deposition for preparing silicon nitride thin film
  • Low temp chemical gaseous deposition for preparing silicon nitride thin film
  • Low temp chemical gaseous deposition for preparing silicon nitride thin film

Examples

Experimental program
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Effect test

Embodiment 1

[0022] Insert clean 2-inch monocrystalline silicon wafers (p-type, 110) upright on the quartz boat, load 80 silicon wafers at a time, place them at equal intervals, and the distance between the wafers is 8mm, and place the loaded quartz boat on the figure 1 At the central position of the hot-wall tubular quartz reactor, turn on the vacuum pump and pump it down to below 0.5Pa. The temperature at the central position of the reactor, that is, the substrate temperature, is 700°C. In order to improve the uniformity of the deposited film, a resistance heating furnace ( That is, the temperature gradient between the inlet and outlet of the aforementioned diffusion furnace) is 20°C, and the deposition can only begin after the temperature is controlled to ±1°C. Electronic grade high purity NH 3 as N source, with [(C 2 h 5 ) 2 N] 3 SiCl is the source of Si, the flow rates of the two are 80 and 10 sccm respectively, and high-purity N 2 (99.999%) is the carrier gas used to adjust the ...

Embodiment 2

[0025] With high purity NH 3 as N source, with (C 2 h 5 NH) 3 SiCl is the Si source, the flow rates of the two are 80 and 10 sccm respectively, and the temperature at the center of the reactor is 680°C, and the rest are the same as in Example 1. Prepared SiN x The content of H in the film is about 4.2at%, nearly stoichiometric SiN x C and O are absent from the film (x=1.30).

Embodiment 3

[0027] With high purity NH 3 as N source, with [(C 3 h 7 ) 2 N] 2 SiH 2 Si source, the flow rates of the two are 80 and 10 sccm respectively, the temperature at the center of the reactor is 750°C, and the rest are the same as in Example 1. Prepared SiN x The content of H in the film (x=1.28) is about 5.3 at%, free of C and O.

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Abstract

This invention relates to a chemical vapor deposition method for manufacturing silicon nitride (SiNx) thin films. The method uses NH3 as nitrogen source, and organic silicon precursor (R1R2N) nSi (R3)4-n as silicon source, wherein R1, R2 = H, CH3, C2H5, C3H7 or C4H9, R3 = H or Cl, and n = 2, 3 or 4. With optimized conditions, the low-pressure chemical vapor deposition method can manufacture uniform, low H and C content and near stoichiometric SiNx thin films at a relatively low reaction temperature. SiNx (x = 1.28-1.33) thin films can be used in semiconductor industry and silicon-based solar cells.

Description

technical field [0001] The invention relates to a method for preparing SiN at low temperature by chemical vapor deposition (CVD) x thin film method, more precisely with NH 3 SiN is prepared at low temperature by Low Pressure Chemical Vapor Deposition (LPCVD) process using organosilicon source precursor as the source of nitrogen. x A thin film method belongs to the field of semiconductor thin films. Background technique [0002] In a semiconductor integrated circuit, an insulating film for electrical isolation between devices and between wirings is very important. In order to improve the stability and reliability of device performance, the device must be isolated from the surrounding environment to enhance the device's ability to block external ion contamination, control and stabilize the characteristics of the semiconductor surface, protect the internal interconnection of the device and prevent Devices are subject to mechanical and chemical damage. Due to the good interf...

Claims

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Application Information

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IPC IPC(8): C23C16/34C23C16/52
Inventor 刘学建黄莉萍孙兴伟
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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