Preparation method for graphene

A graphene and semiconductor technology, applied in the field of graphene and graphene preparation by chemical vapor deposition, can solve the problems of inability to prepare layers of high-quality graphene, achieve the effect of eliminating quality defects and simplifying the preparation process

Inactive Publication Date: 2013-01-16
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of preparation method of graphene, is used for solving...

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Embodiment 1

[0033] The invention provides a kind of preparation method of graphene, described method comprises at least:

[0034] First perform step 1) providing a semiconductor substrate as a catalyst. Preferably, the semiconductor substrate is cleaned with water, deionized water, ethanol and acetone in sequence, wherein the semiconductor substrate includes germanium or gallium arsenide. In the first embodiment, since the semiconductor substrate is a no-clean germanium material substrate, the cleaning step is not required. Then go to step 2).

[0035] In step 2), under hydrogen and an inert atmosphere, the semiconductor substrate is heated to 810-910°C in a tube furnace, the flow rate of the hydrogen gas is 2-50 sccm, preferably, the flow rate of the hydrogen gas is 30 ~50 sccm. Specifically, in the first embodiment, hydrogen and argon (Ar) are selected as the hydrogen gas and the inert atmosphere, wherein the flow rate of hydrogen gas is 50 sccm, and the flow rate of argon gas is 200 ...

Embodiment 2

[0047] The technical scheme of the preparation method of Example 2 is basically the same as that of Example 1, the only difference is that in this Example 2, only the flow rate of the carbon source in step 3) is adjusted, which are respectively selected from 3sccm, 2sccm, 0.75sccm, 0.1sccm sccm four situations, and compare the graphene prepared under these four different reaction parameter conditions, and for the rest of the similarities, please refer to the relevant description of Example 1.

[0048] The rest of the reaction parameters in Example 2 except the carbon source flow rate are the same as in Example 1, specifically: the semiconductor substrate is germanium, the heating temperature (i.e. reaction temperature) for the germanium semiconductor substrate is 910°C, and the hydrogen flow rate is 50 sccm. The inert gas is argon (Ar) with a flow rate of 200 sccm, the reaction time is 100 min, and the carbon source is gaseous carbon source methane.

[0049] It should be noted...

Embodiment 3

[0052] The technical solution of the preparation method of the third embodiment is basically the same as that of the first embodiment, the only difference is that in the third embodiment only the heating temperature (reaction temperature) of the semiconductor substrate is adjusted, which are respectively selected from 810°C, 850°C, 900°C °C and 910 °C, and compare the graphene prepared under these four different reaction parameter conditions. For other similarities, please refer to the relevant description of Example 1.

[0053]Except for the heating temperature (reaction temperature) of the semiconductor substrate in the third embodiment, the remaining reaction parameters are the same as those in the first embodiment, specifically: the semiconductor substrate is germanium, the flow rate of hydrogen is 50 sccm, the inert gas is argon (Ar) and The flow rate is 200 sccm, the reaction time is 100 min, the carbon source is gaseous carbon source methane, and the flow rate of methane...

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Abstract

The invention provides a preparation method for graphene. The method comprises the following steps of: heating a semiconductor substrate under the atmosphere of hydrogen and the inert atmosphere to 810 to 910 DEG C; keeping the temperature unchanged, and introducing a carbon source; reacting on the surface of the semiconductor substrate by a chemical vapor deposition method; and after reaction, closing the carbon source, and cooling under the atmosphere of hydrogen and the inert atmosphere to the room temperature to prepare the graphene on the surface of the semiconductor substrate. Compared with a method for growing the graphene on the surface of the conventional substrate by the chemical vapor deposition method, the method for directly synthesizing the graphene on the surface of the semiconductor material has the advantage that the preparation process for the graphene is simplified; meanwhile, by adjusting reaction parameters, a large-size, zero-defect and high-quality graphene film of which the layer number can be controlled can be prepared; and moreover, the preparation method is compatible with the semiconductor industry, and the wide application of the graphene to the semiconductor industry can be promoted quickly.

Description

technical field [0001] The invention belongs to the field of semiconductors and relates to a method for preparing graphene, in particular to a method for preparing graphene by chemical vapor deposition. Background technique [0002] Graphene, the monoatomic layer of graphite, is carbon atoms according to sp 2 A two-dimensional structure arranged in a honeycomb pattern formed by bonds. In 2004, two scientists from the University of Manchester in the United Kingdom discovered graphene using the method of micromechanical exfoliation, and won the Nobel Prize in Physics in 2010. [0003] Since graphene was discovered, due to its excellent mechanical, electrical, optical and chemical properties, such as high electron mobility, long-range ballistic transport properties at room temperature, and adjustable band gap, it has Due to its huge application prospects, it has attracted much attention from academia and industry, and has triggered a research boom in the fields of physics and...

Claims

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Application Information

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IPC IPC(8): C01B31/04C01B32/186
Inventor 狄增峰王刚朱云陈达张苗丁古巧谢晓明
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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