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Cu-Ga alloy target for Cu-In-Ga-Se film solar battery and preparing process thereof

A technology for solar cells and copper-gallium alloys is applied in the field of copper-gallium alloy targets to achieve the effects of good stability, cost reduction and oxidation prevention.

Inactive Publication Date: 2006-01-11
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a copper-indium-gallium-selenide thin-film solar cell copper-gallium alloy target and its preparation method, which is used for the magnetron sputtering preparation process of the copper-indium-gallium-selenide absorbing layer prefabricated film, and solves the problem of copper indium gallium selenium prefabrication. Improvement and Precise Control of Gallium Content in Thin Films

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] According to the proportion of elemental gallium and elemental copper atomic percentages of 25% and 75% respectively, firstly cut the pure copper Φ10 bar into 10mm small pieces, place it at the bottom of the melting crucible, then heat and melt the elemental gallium and pour it into the crucible . Melting is carried out in a vacuum below 10 Pa, and the temperature is first raised to 800 °C at 10 °C / min, and then kept for 90 min. In vacuum, the central opening at the bottom of the crucible is directly opened, so that the alloy is quickly rushed into the combined target mold. The bottom of the mold is cooled by kerosene circulation to make it quenched and formed at a speed of 60°C / min. After the alloy target is cooled to room temperature, the target and the mold are taken out, and the mold is disassembled to obtain a copper-gallium alloy target with a homogeneous composition and fine grains of 25% and 75% gallium and copper respectively.

Embodiment 2

[0018] According to the ratio of elemental gallium and elemental copper atomic percentages of 35% and 65% respectively, firstly cut the pure copper Φ10 bar into 10mm segments, place them at the bottom of the crucible, heat and melt the elemental gallium, and then pour it into the crucible. Melting was carried out under the protection of argon at 1 standard atmospheric pressure, and the temperature was first raised to 850°C at 20°C / min, and then kept at a temperature of 70min. Under the protection of argon, the central opening at the bottom of the crucible is directly opened, so that the alloy is quickly rushed into the combined target mold. The bottom of the mold is cooled by water circulation to make it quenched and formed at a speed of 70°C / min. After the alloy target is cooled to room temperature, the target and the mold are taken out, and the mold is disassembled to obtain a copper-gallium alloy target with a homogeneous composition and fine grains with gallium and copper ...

Embodiment 3

[0020] According to the ratio of elemental gallium and elemental copper atomic percentages of 40% and 60% respectively, the pure copper Φ10 bar is first cut into 10mm segments, placed at the bottom of the crucible, and the gallium element is heated and melted and then poured into the crucible for mixing. Melting was carried out under the protection of nitrogen at 3 standard atmospheric pressures, and the temperature was first raised to 900°C at 30°C / min, and then kept at a temperature of 60min. Under the protection of nitrogen, the central opening at the bottom of the crucible is directly opened, so that the alloy is quickly rushed into the combined target mold. The bottom of the mold is cooled by water circulation to make it quenched and formed at a speed of 80°C / min. After the alloy target is cooled to room temperature, the target and the mold are taken out, and the mold is disassembled to obtain a copper-gallium alloy target with 40% and 60% atomic percentages of gallium an...

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Abstract

This invention relates to a CuGa alloy target used in CuInGaSe film solar energy cell and its preparation method, which mixes single metals of Cu and Ga to be melted under the gas protection or in vacuum then to be cast and quenched to formation. The formed alloy sputter target material includes: Ga: 25%-67% of the atomic percentage content having the character of fineness and high stability.

Description

technical field [0001] The invention relates to a metal sputtering target material required by the optoelectronic industry and semiconductor industry and its preparation, in particular to a copper gallium alloy target used for preparing an absorption layer of a copper indium gallium selenium thin film solar cell. Background technique [0002] The compound semiconductor copper indium selenide (CuInSe) with chalcopyrite structure 2 , referred to as CIS) or copper indium gallium selenide (Cu(In,Ga)Se) doped with gallium 2 , referred to as CIGS) miscible crystals are direct band gap materials, and thin-film solar cells using it as a light-absorbing layer are considered to be one of the most promising third-generation compound photovoltaic cells, which not only have low manufacturing costs, high photoelectric conversion Efficiency, and has outstanding advantages such as strong radiation resistance and stable performance. The structure of copper indium gallium selenide (CIGS) th...

Claims

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Application Information

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IPC IPC(8): H01L31/18C22C1/02C22C9/00C22C28/00C23C14/34
CPCY02P70/50
Inventor 庄大明张弓郑麒麟李秋芳向华
Owner TSINGHUA UNIV
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