Cleaning fluid for cleaning plasma etching residue

A technology of etching residue and cleaning liquid, which is applied in the field of cleaning liquid, can solve the problems of poor cleaning effect, high corrosion of the substrate, small operating window, etc., and achieve good corrosion inhibition, excellent low temperature resistance, and strong chelation effect of ability

Inactive Publication Date: 2008-10-22
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to solve the problems of poor or unstable cleaning effect of the existing ion etching residue cleaning solution, great corrosion to the substrate, small operating window, and environmental pollution, and provide a cleaning solution with strong cleaning ability and Low etch rate, safe and non-toxic plasma etch residue cleaning solution

Method used

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  • Cleaning fluid for cleaning plasma etching residue

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Experimental program
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Effect test

Embodiment 1

[0025] 15 wt% citric acid / ammonium citrate buffered aqueous solution, 0.0001 wt% hydroxyl-containing polyethyl ether (molecular weight 1000), 5 wt% ethylene glycol, 2 wt% ammonium fluoride and 77.9999 wt% sulfolane.

[0026] In the citric acid / ammonium citrate buffer solution, the content of citric acid and ammonium citrate is 5wt% by mass, and the content ratio of citric acid and ammonium citrate is 10:1.

Embodiment 2

[0028] 56wt% citric acid / tetramethylammonium citrate buffered aqueous solution, 1wt% polyvinyl alcohol homopolymer (molecular weight 2000), 1wt% glycerol, 1wt% hydrogen fluoride, 1wt% 2-phosphonic acid butane-1,2,4 - tricarboxylic acid and 40 wt% dimethylsulfoxide.

[0029] In the citric acid / tetramethylammonium citrate buffer solution, the content of citric acid and tetramethylammonium citrate is 60wt% by mass, and the content ratio of citric acid and tetramethylammonium citrate is 1:1.

Embodiment 3

[0031]15wt% citric acid / tetraethylammonium citrate buffered aqueous solution, 1wt% polyvinyl alcohol copolymer (molecular weight, 3000), 1wt% pentaerythritol, 2wt% tetramethylammonium fluoride, 1wt% aminotrimethylene phosphonic acid and 80wt% N - Methylpyrrolidone (NMP).

[0032] In the citric acid / tetraethylammonium citrate buffer solution, the content of citric acid and tetraethylammonium citrate is 10 wt%, and the content ratio of citric acid and tetraethylammonium citrate is 1:30.

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Abstract

The invention discloses washing liquid used in the semiconductor industry to wash plasma etching residues. The washing liquid contains citric acid/citrate buffer solution, fluorides, macromoledular corrosion inhibitor, anti-freeze agent and solvent. The washing liquid can effectively wash the plasma etching residues during the process of manufacturing a semiconductor, have low etching velocity on nonmetals and metal substrates such as Si, SiO2, tetraethoxy silane silicon dioxides (PETEOS), low-medium materials, Ti, Al, Cu and so on, is safe and harmless to the environment and the human body, and has good application prospect in the microelectronic field such as washing of semiconductor wafers and so on.

Description

technical field [0001] The invention relates to a cleaning solution in a semiconductor manufacturing process, in particular to a cleaning solution for cleaning plasma etching residues. Background technique [0002] In the manufacturing process of semiconductor components, the coating, exposure and imaging of photoresist layers are necessary process steps for the pattern manufacturing of components. Residues of photoresist material need to be completely removed at the end of patterning (ie, after photoresist coating, imaging, ion implantation, and etching) before proceeding to the next process step. Ion bombardment during the doping step hardens the photoresist polymer, thus making the photoresist less soluble and thus more difficult to remove. To date, a two-step process (dry ashing and wet etching) has generally been used in the semiconductor manufacturing industry to remove this photoresist film. The first step uses dry ashing to remove most of the photoresist layer (PR)...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
CPCG03F7/425C11D11/0047G03F7/426C23G1/106C11D7/265C23G1/103C23G1/125
Inventor 刘兵彭洪修曾浩
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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