Nitride-based semiconductor device and method of manufacturing the same

a technology of nitride and semiconductors, applied in the field of semiconductor devices, can solve the problems of difficult fabrication, good yield, distortion of barrier layer,
US20070045670A1Inactive Publication Date: 2007-03-01KK TOSHIBA
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
KK TOSHIBA
Publication Date
2007-03-01
Estimated Expiration
Not applicable · inactive patent

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Abstract

The nitride-based semiconductor device includes a carrier traveling layer 1 composed of non-doped AlxGa1-xN (0≦X<1); a barrier layer 2 formed on the carrier traveling layer 1 and composed of non-doped or n-type AlYGa1-YN (0<Y≦1, X<Y) having a lattice constant smaller than that of the carrier traveling layer 1; a threshold voltage control layer 3 formed on the barrier layer 2 and composed of a non-doped semiconductor having a lattice constant equal to that of the carrier traveling layer 1; and a carrier inducing layer 4 formed on the threshold voltage control layer 3 and composed of a non-doped or n-type semiconductor having a lattice constant smaller than that of the carrier traveling layer 1. The nitride-based semiconductor device further includes a gate electrode 5 formed in a recess structure, a source electrode 6 and a drain electrode 7.
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Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2005-252657, filed on Aug. 31, 2005; the entire contents of which are incorporated herein by reference. BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to a semiconductor device, and more particularly to a nitride-based semiconductor device and a method of manufacturing the same.

[0004] 2. Description of the Related Art

[0005] It is effective to use a material having high critical electric field to a power semiconductor device such as a switching device or high frequency power semiconductor device, so that a nitride-based semiconductor material having high critical electric field intensity is used.

[0006] As a nitride-based semiconductor device using a conventional nitride-based semiconductor material, a first conventional art has been known in which a carrier traveling layer ...

Claims

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