The invention discloses a
silicon chip back-
polishing method. The
silicon chip back-
polishing method comprises texture surface making,
diffusion,
etching, PECVD,
screen printing and testing steps. When the texture surface making step is carried out, a primary back
polishing step is carried out, after the primary back polishing step is carried out, an
etching machine is used to carry out more than one time subsequent back polishing step, after the subsequent back polishing steps, conventional
diffusion,
etching, PECVD,
screen printing and testing operations are carried out. According to the invention, two back polishing steps are superposed to form a good back polishing effect; the back
reflectivity is greatly improved, and the
cell performance is finally improved; in the subsequent multiple back polishing steps, the thickness reduction amount is reasonably adjusted, different degrees of back polishing effects are obtained, etching lines on edges are effectively reduced, the resistance value of the square
resistor does not rise too high, the case that when the
silicon chip passes through an alkaline tank, the
silicon chip reacts with high-concentration alkali lye and is not stable is avoided, at the same time, the alkaline tank passing time is prolonged, and the polishing effect is further enhanced.