50results about How to "Reduce FWHM" patented technology

The invention discloses a broadband polarization and phase control array based on a birefringent super-surface structure. The broadband polarization and phase control array comprises a substrate, a metal reflection film, a medium layer, a cross sub-wavelength optical antenna unit, a birefringent phase control super-surface structure unit and a birefringent phase control super-surface structure array. According to a reasonable design, the birefringent phase control super-surface structure unit has a birefringent effect and a phase control function, and under incident conditions of circularly polarized light, the reflected light further has polarization control and phase control functions of space sub-wavelength resolution; and with respect to the circularly polarized incident light, the birefringent phase control super-surface structure units are arranged to form a birefringent phase control super-surface structure array according to the needed space polarization and phase distributionin order to obtain a special optical field with any polarization and phase distribution. Moreover, the birefringent phase control super-surface structure unit and the birefringent phase control super-surface structure array have wide operating wavelength ranges.

The invention relates to the field of research on growth of RFeO3 photomagnetic function crystal, an optical floating zone secondary melting method is a brand new and efficient growth method for the materials at present. In the method, high-purity ferric oxide and rare earth oxide are used as raw materials to prepare a material bar through processes of milling, sintering, isostatic pressing and the like according to chemical proportion, and then, the material bar is placed in an optical floating zone furnace to grow in air atmosphere. A surface of a single crystal prepared by the method has ideal surface finish, density and uniformity, a characteristic peak of the single crystal is obviously increased, and FWHM is obviously reduced, so that crystallization quality of the crystal is greatly improved, a pure-phase integral RFeO3 crystal can be obtained more easily; simultaneously, the method has high efficiency and can appropriately adjust growth speed in a rang of 1-9mm/h according to different application goals, that is unachievable to traditional methods, such as a pulling method, a hydrothermal method, a descending method and the like.

The invention provides an all-fiber STED super-resolution microscopic illumination device. The device mainly consists of a laser 1, a delay unit 2 and a beam generator 3, wherein the beam generator 3mainly consists of a double-clad fiber 4 and a polarization controller 5; the beam generator 3 can convert short-wave laser light 6 and long-wave laser light 7 emitted by the laser 1 into Gauss-shapedexcitation light 8 and hollow annular loss light 9, respectively; and since the light spot centers of the generated light are completely coincided and the light is irradiated on a fluorescent sample10 in sequence after the delay of the delay unit 2, stimulated emission depletion (STED) is generated, fluorescent light 11 with extremely small light spot is stimulated, and the final resolution is not limited by the diffraction of light, thereby breaking the diffraction limit and realizing all-fiber STED super-resolution microscopic illumination. The device has the advantages of highly integrating light beam generators and enabling equipment to be more flexible and stable.

The invention discloses a double-sided high temperature super-conductive film multiple-layer structure and the preparation method. The double-sided high temperature super-conductive film multiple-layer structure comprises a non-monomorph oxide uropatagia of low cost, both sides of the non-monomorph oxide uropatagia of low cost are provided with a metal film layer, an oxide film layer of biaxial texture and a super-conductive film layer. At first, the metal film with a good surface is arranged on the non-monomorph oxide uropatagia of low cost and then the ion beam ancillary deposition technology is adopted to prepare the oxide film material of biaxial texture on the metal film, saving the expensive oxide monomorph material as the material of the uropatagia of large area of double-sided high temperature super-conductive film but choosing the Si monomorph of low cost and the like. The double-sided high temperature super-conductive film that is prepared is of low cost.

The present invention discloses a compound semiconductor epitaxial wafer and its fabrication method. The method comprises the steps of the followings: depositing a first buffer layer of silicon on a silicon substrate; depositing a compound semiconductor second buffer layer on the first buffer layer; growing a compound semiconductor first epitaxy layer on the second buffer layer; reducing the threading dislocation density by a thermal treatment, which is caused by the discrepancy in the lattice constants or in the thermal expansion coefficients of the silicon substrate and the compound semiconductor epitaxy layers; growing a compound semiconductor second epitaxy layer on the first epitaxy layer; and, applying a thermal treatment again. Accordingly, a compound semiconductor epitaxy layer with excellent crystal quality is obtained.

The invention provides a light emitting diode and a driving method thereof, a light source device and electronic equipment, and relates to the technical field of semiconductors. The light emitting diode comprises a substrate, a reflective light emitting layer, a first electrode, a second electrode, a first insulating layer, a saturable absorber layer, a third electrode, a fourth electrode and a reflective composite layer, wherein the reflective light emitting layer disposed on the substrate; the first electrode, the second electrode and the first insulating layer are separately arranged on thereflective light emitting layer; the saturable absorber layer disposed on the first insulating layer; the third electrode, the fourth electrode and the reflective composite layer are separately arranged on the saturable absorber layer, and the reflectivity of the reflective light emitting layer is greater than that of the reflective composite layer; and orthographic projections of the saturable absorber layer, the third electrode, the fourth electrode and the reflective composite layer on the reflective light emitting layer are not overlapped with the first electrode and the second electroderespectively. According to the invention, after the light emitted by the reflective light emitting layer passes through the saturable absorber layer, the light with low energy is absorbed more, and the light with high energy is absorbed less, so that the full width at half maximum of the spectrum of the light emitting diode is reduced, and the color purity of the colored light of the light emitting diode is improved.

The invention discloses a PPS composite material which comprises the following components in parts by weight: 100 parts of PPS resin, and 0.1-10 parts of a phosphorous acid metal salt. By adding the phosphorous acid metal salt, the crystallization rate of the PPS composite material can be increased. The PPS composite material has the advantage of rapid crystallization, and the melt flow rate of the PPS composite material can be increased.

The embodiment of the invention discloses a full wave-transparent zone plate. The full wave-transparent zone plate includes a concentric ring structure, wherein the concentric ring structure includesa first ring body and a second ring body which are alternately arranged, and the radius rk of the kth ring of the concentric ring structure satisfies the formula (as shown in the description), whereinf is the focal length of the full wave-transparent zone plate, and lambda is the wavelength of the incoming wave, and k is a positive integer; and the first ring body and the second ring body have the same height and satisfy the formula (as shown in the description), wherein n1 is the refractive index of the second ring body, and a is a positive odd number. The full wave-transparent zone plate can focus the parallel incoming wave, and can improve the light intensity of the focused light spot and the focusing efficiency.

The invention discloses a deep ultraviolet light-emitting diode structure and a preparation method thereof, and aims to improve the electroluminescent spectral characteristics of the current deep ultraviolet light-emitting diode, especially reduce the full width at half maximum of the spectrum, improve the purity of light and improve the luminous efficiency of the light. Therefore, the effectiveness of application to sterilization and phototherapy is promoted. The light-emitting diode at least comprises a substrate, an AlN layer located on the surface of one side of the substrate, an N-type AlaGa1-aN ohmic contact layer located on the surface of the AlN layer, an AlbGa1-bN/AlN/AlcGa1-cN interface planarization multi-layer structure located on the surface of the N-type AlaGa1-aN ohmic contact layer, an AlxGa1-xN first quantum barrier layer located on the surface of the AlbGa1-bN/AlN/AlcGa1-cN interface planarization multi-layer structure, an AlyGa1-yN/AlxGa1-xN multi-quantum well active layer located on the surface of the AlxGa1-xN first quantum barrier layer, an AlzGa1-zN final quantum barrier layer located on the surface of the AlyGa1-yN/AlxGa1-xN multi-quantum well active layer, a P-type AldGa1-dN electron barrier layer located on the surface of the AlzGa1-zN final quantum barrier layer, and a P-type AleGa1-eN ohmic contact layer located on the surface of the P-type AldGa1-dN electron barrier layer.

The present invention relates to a method for synthesizing a semiconducting nanosized material.