Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Structure of deep ultraviolet light emitting diode and preparation method thereof

A light-emitting diode, deep ultraviolet light technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of insufficient luminous purity, low mobility, poor crystal quality, etc., to expand the scope of application, improve luminous efficiency, The effect of improving luminous efficiency

Pending Publication Date: 2021-11-02
江西力特康光学有限公司
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the lattice and thermal mismatch, as well as the low mobility of Al atoms, the crystal quality of AlGaN materials is poor, especially as the material crystal quality becomes shorter, the composition of Al needs to increase, and the mobility of Al atoms is low. The difference in the mobility of Ga atoms increases, which will easily cause the appearance of high and low terrace crystal phases on the surface of the epitaxial layer, and it will not be possible to form a flat interface between layers of multiple quantum wells in the light-emitting active region, which is more likely to cause The composition and thickness of each layer in the multiple quantum wells are not uniform, so it is easy to increase the full width at half maximum (FWHM) of the electroluminescent spectrum (EL spectrum) of the LED, which in turn reduces the probability of composite light emission in the active region of the multiple quantum wells. and insufficient purity of luminescence

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Structure of deep ultraviolet light emitting diode and preparation method thereof
  • Structure of deep ultraviolet light emitting diode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0061] This specific embodiment is to prepare UVC light-emitting diodes, and the specific steps are:

[0062] (1) Use an MOCVD machine, heat up to 800°C, and feed TMAl and NH at 50Torr 3 and H 2 , forming 25nm low-temperature AlN on a sapphire substrate;

[0063] (2) Raise the temperature to 1270°C and feed TMAl and NH at 50Torr 3 and H 2 , forming 3μm high temperature AlN;

[0064] (3) Cool down to 1070°C and feed TMAl, TMGa, SiH at 50Torr 4 , NH 3 and H 2 , forming 2 μm N-type Al 0.6 Ga 0.4 N ohmic contact layer, where SiH 4 It is an N-type dopant, and the Si doping concentration is 4E+19cm -3 ;

[0065] (4) Lower the temperature to 1030°C and lower the pressure to 30Torr to feed TMAl, TMGa, SiH 4 , NH 3 and H 2 , forming Si-doped Al b Ga 1-b N / AlN / Al c Ga 1-c N interface planarized multilayer structure, in which, controlling the Al b Ga 1-b The thickness of N is 1-5nm, the thickness of AlN layer is 1-2nm, Al c Ga 1-c The thickness of the N layer is 1-5...

Embodiment 4

[0084] This specific embodiment is to prepare UVB light-emitting diode, and concrete steps are:

[0085] (1) Use an MOCVD machine, heat up to 800°C, and feed TMAl and NH at 50Torr 3 and H 2 , forming 25nm low-temperature AlN on a sapphire substrate;

[0086] (2) Raise the temperature to 1270°C and feed TMAl and NH at 50Torr 3 and H 2 , forming 3μm high temperature AlN;

[0087] (3) Cool down to 1070°C and feed TMAl, TMGa, SiH at 50Torr 4 , NH 3 and H 2 , forming 2 μm N-type Al 0.5 Ga 0.5 N ohmic contact layer, where SiH 4 It is an N-type dopant, and the Si doping concentration is 4E+19cm -3 ;

[0088] (4) Lower the temperature to 1030°C and lower the pressure to 30Torr to feed TMAl, TMGa, SiH 4 , NH 3 and H 2 , forming Si-doped Al b Ga 1-b N / AlN / Al c Ga 1-c N interface planarized multilayer structure, in which, controlling the Al b Ga 1-b The thickness of N is 1-5nm, the thickness of AlN layer is 1-2nm, Al c Ga 1-c The thickness of the N layer is 1-5nm; and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a deep ultraviolet light-emitting diode structure and a preparation method thereof, and aims to improve the electroluminescent spectral characteristics of the current deep ultraviolet light-emitting diode, especially reduce the full width at half maximum of the spectrum, improve the purity of light and improve the luminous efficiency of the light. Therefore, the effectiveness of application to sterilization and phototherapy is promoted. The light-emitting diode at least comprises a substrate, an AlN layer located on the surface of one side of the substrate, an N-type AlaGa1-aN ohmic contact layer located on the surface of the AlN layer, an AlbGa1-bN / AlN / AlcGa1-cN interface planarization multi-layer structure located on the surface of the N-type AlaGa1-aN ohmic contact layer, an AlxGa1-xN first quantum barrier layer located on the surface of the AlbGa1-bN / AlN / AlcGa1-cN interface planarization multi-layer structure, an AlyGa1-yN / AlxGa1-xN multi-quantum well active layer located on the surface of the AlxGa1-xN first quantum barrier layer, an AlzGa1-zN final quantum barrier layer located on the surface of the AlyGa1-yN / AlxGa1-xN multi-quantum well active layer, a P-type AldGa1-dN electron barrier layer located on the surface of the AlzGa1-zN final quantum barrier layer, and a P-type AleGa1-eN ohmic contact layer located on the surface of the P-type AldGa1-dN electron barrier layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductor light emitting diodes, in particular to a structure of a deep ultraviolet light emitting diode and a preparation method thereof. Background technique [0002] LED (light-emitting diode) is a light-emitting device made of solid-state semiconductors. In recent years, it has generally replaced traditional incandescent lamps due to its safety, small size, environmental protection, high efficiency, and low energy consumption. In addition, LED light sources in the ultraviolet band are also widely used in industrial ink curing, and are gradually used in many fields such as medical treatment, food processing, and bacterial disinfecting. Generally, ultraviolet light can be divided into UVA (Ultraviolet A, long-wave ultraviolet light), UVB (Ultraviolet B, medium-wave ultraviolet light) and UVC (Ultraviolet C, short-wave ultraviolet light) according to wavelength, and the corresponding wavelength range...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/06H01L33/32H01L33/00
CPCH01L33/06H01L33/32H01L33/007Y02P70/50
Inventor 赖穆人刘锐森刘召忠蓝文新林辉杨小利
Owner 江西力特康光学有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com