38results about How to "Uniform interface" patented technology

A network interface unit is provided for use intermediate a LAN and a public or private network, or a combination of both, for establishing secure links to a VPN gateway. Login by a LAN client with the network interface unit, addressing, authentication, and other configuration operations achieved using a web page-based GUI are applied in establishing tunnels from LAN clients to desired VPN destinations. Illustrative network interface units include a DHCP server and provide encryption-decryption and encapsulation-decapsulation of data packets for communication with VPN nodes. Configuration and connection of a client are further enhanced by a built-in DNS server and other functional servers to provide a high degree of autonomy in establishing connections to a desired VPN gateway via an ISP or other public and / or private network links to. The interface unit then performs required authentication exchanges, and required encryption key exchanges.

A data transmission and control device in a multi-node sensor network, comprising a processing control module (110). The processing control module (110) comprises an instruction processing unit, a data processing unit, at least one group of first-type interfaces (J101-J10n), at least one group of second-type interfaces (J201-J20n), one group of fifth-type interfaces (J500) and one group of sixth-type interfaces (J600). The fifth-type interfaces (J500) have communication connections with an external control device (120). The first-type interfaces (J101-J10n) respectively have communication connections with a sensor (140) so as to cooperate with the instruction processing unit to configure and query a parameter of the sensor (140), and to upgrade firmware and report feedback information of the sensor (140) and the processing control module. The second-type interfaces (J201-J20n) respectively have communication connections with the sensor (140) and the sixth-type interfaces (J600) have communication connections with an external service terminal (130) so as to cooperate with the data processing unit to acquire data of a plurality of sensors (140) and transmit the data to the external service terminal (130) for processing. The device controls the sensor (140) via a network, enables the data of the sensor (140) to be modular, and provides a uniform interface to the outside, thus forming a smart control platform for dynamic configuration, data processing and external interaction of the sensor (140).

The present invention intends to provide a method for manufacturing a semiconductor device in which source / drain extension regions having a uniform depth are created with high reproducibility. This objective is achieved by the following method: A gate electrode 24 is formed on a semiconductor substrate 21 via a gate insulator 23. The portion of the semiconductor substrate 21 other than the gate electrode 24 is irradiated with an ultra-short pulsed laser light having a pulse width within a range from 10 to 1000 femtoseconds in order to create an amorphous layer 26a. Then, recesses 27 are created in the semiconductor substrate 21 by selectively etching the amorphous layer 26a. The recesses 27 are filled with semiconductor layers 28 whose impurity concentration is higher than that of the semiconductor substrate 21, and the source / drain extension regions 31 are created there. Within the region other than the gate electrode 24 and the source / drain extension regions 31, Deep diffusion layers 30 deeper than the source / drain extension regions 31 are created.

The invention discloses a novel polymer lithium battery and a relative preparation method. The invention modifies the baffle membrane of general liquid lithium battery, adds chemical crosslink agent monomer with high boiling point into anode slurry and cathode slurry used for preparing liquid lithium battery, fills liquid lithium battery electrolyte with thermal initiator, to process thermal solidification, to obtain a novel polymer lithium battery. The invention can use general production process and device of prior liquid lithium battery, with the support for batch production of polymer battery, while the novel battery has same electric property of liquid battery.

The invention relates to a method for preparing a three-component phononic crystal by using scattering objects. The method comprises the following steps: orderly arranging and uniformly coating the scattering objects in substrates, wherein the substrates are epoxy resins in different mixture ratios; the process of coating is implemented by using a molding mold, wherein the molding mold consists of an upper molding plate (1), a lower molding plate a (3) and a lower molding plate b (5); scrubbing the scattering objects by using acetone and arranging the scrubbed scattering objects in a semispherical hole (4) of the lower molding plate a; covering the upper molding plate at the upper end of the lower molding plate a; casting the epoxy resins from which air bubbles are removed into the lower molding plate a from a casting hole (2) of the upper molding plate (2); solidifying the scattering objects in a baking oven at the temperature of between 30 and 100 DEG C for 24 hours; turning the scattering objects coated and solidified by the epoxy resins for 180 degrees and placing the turned scattering objects into a concave volume of the lower molding plate b; and casting the epoxy resins onto the other sides of the scattering objects and solidifying the scattering objects in the baking oven at the temperature of between 30 and 100 DEG C for 24 hours to obtain the three-component phononic crystal. The three-component phononic crystal has the characteristics of stable performance, uniform interface, strong designability and the like.

The invention discloses a preparation method of a wood-plastic material coated with modified nano particle wood powder. The preparation method comprises the following steps: adding wood powder into a tetraethyl orthosilicate water solution according to a weight ratio of wood powder to tetraethyl orthosilicate of 2.8-3.2:8-12, stirring for two hours to obtain a mixed solution; then dropwise adding a silane coupling agent into the mixed solution under stirring according to a weight ratio of silane coupling agent to tetraethyl orthosilicate of 3-5:40, carrying out reactions for 0.5 hour to obtain a modified wood powder solution; then subjecting the obtained modified wood powder solution to treatments of suction filtration, washing, and drying to obtain modified wood powder; mixing the modified wood powder with polypropylene particles according to a weight ratio of 35-45:55-65, transferring the mixture to a screw extruder, and moulding. The provided wood-plastic material can be used to produce high-performance wood-plastic products having the advantages of high mechanical strength, heat resistance, stable structure, and long service life, and can be widely used in fields such as construction materials, outdoor pavilions, indoor / outdoor floors and furniture, and the like.

The invention relates to a short carbon fiber reinforced Csf / SiC ceramic matrix composite material and a preparation method thereof. The preparation method of the short carbon fiber reinforced Csf / SiCceramic matrix composite material comprises the steps: (1) mixing short carbon fibers, a dispersing agent, a binder and a solvent to obtain short carbon fiber slurry; (2) carrying out 3D printing molding on the obtained short carbon fiber slurry to prepare a short carbon fiber directionally-arranged reinforcement; and (3) drying and degumming the obtained reinforcement, then preparing an interface phase and a part of SiC matrix, and finally, carrying out a densification process to obtain the short carbon fiber reinforced Csf / SiC ceramic matrix composite material.

The invention discloses a composite molding preparation method of three-component phononic crystal, comprising a mould structure design method and a three-component phononic crystal composite preparation method developed around a mould. The mould is composed of a first molding plate (1), a second molding plate (2), a third molding plate (3), a fourth molding plate (4) and a fifth molding plate (5), wherein the first molding plate and the second molding plate form a two-component phononic crystal composed of an oscillator and a wrapping body; the third molding plate, the fourth molding plate and the fifth molding plate prepare the three-component phononic crystal composed of the two-component phononic crystal and a substrate. The invention is a composite molding preparation method which not only contains grouping shaping but also contains layering shaping, and can prepare the three-component phononic crystal with low cost. The prepared three-component phononic crystal has the advantages of favorable combination property, stable performance, even interface, strong designability and the like.

The present invention discloses a negatron compression rate-ultra-steep sub-threshold slope field effect transistor and a preparation method thereof. According to the technical scheme of the invention, in the sub-threshold region of a device, a first conventional gate dielectric layer and a second conventional gate dielectric layer form a conventional gate dielectric capacitor. A negatron compression-rate gate dielectric layer forms an NEC capacitor. In this way, the capacitance value of the conventional gate dielectric capacitor is larger than the absolute value of the NEC capacitor, so that the above two series capacitors are negative in value. The gate control coefficient is less than 1 and the gate leakage current is inhibited. As a result, the gate voltage has an exceptional control capability over the surface of a channel, so that the device is ultra-steep in sub-threshold slope. Meanwhile, considering the variation at the electronic scale, the NEC capacitor of the device enables the macroscopic properties of the device to be free of the hysteresis and the material fatigue resistance any more. Therefore, on the basis that the power consumption of the device is reduced, the NCFET problem of the traditional ferroelectric material is solved. For the industry development of low-power-consumption integrated circuits in the future, the negatron compression rate-ultra-steep sub-threshold slope field effect transistor and the preparation method thereof have a wide application prospect.

The invention discloses a fly ash based composite material, which is prepared from fly ash and zinc hydroxide or zinc oxide coating the surface of the fly ash. The fly ash based composite material is a material of a core-shell structure using the coal ash as a core and using the zinc hydroxide or zinc oxide as a case; the fly ash based composite material has good whiteness; the application range is greatly expanded; the antibacterial activity value is high; the durable antibacterial performance of the zinc oxide is good; the fly ash based composite material can be used for preparing an antibacterial coating; the coating stability is high. The raw material cost is low; the waste material reutilization can be realized; the added value of the fly ash can be greatly improved; the application prospects are very good.

The invention relates to a lithium ion secondary battery, in particular to a gel polymer lithium ion battery and a production method thereof. The polymer lithium ion battery comprises an anode and a cathode. The polymer lithium ion battery is characterized in that a separator is arranged between the anode and the cathode, and two gel electrolyte layers are respectively arranged between the separator and the anode and the cathode. The method includes the following steps: electrode plate production, polymer coating, electrical core assembly, electrolyte filling and formation. Low-cost, lithium electrolyte-free cellulose acetate butyrate or the mixture of cellulose acetate butyrates with different hydroxy contents or modified polymer based on the cellulose acetate butyrate and added with other groups is dissolved in a certain amount of solvent to prepare polymer solution, which is coated on the surfaces of the electrodes to become films. Under an appropriate temperature, electrolyte solvent swells the polymer layers on the surfaces of the electrodes, so that polymer electrolyte is formed, and under moderate pressure, uniform interfaces are formed between the electrodes and the separator.

The invention discloses a three-dimensional porous lithium metal composite negative electrode material and a preparation method and application thereof. At first, that weave stainless steel mesh is pickled and dry to obtain clean and dry stainless steel mesh current collector; A low-temperature surface nitriding treatment is then carry out in a glow plasma nitriding furnace, wherein that treatmenttemperature is 300-500 DEG C and the treatment time is 0.1-5 hours; Finally, the nitrogen-doped stainless steel mesh and the lithium sheet are mechanically pressed by a tablet press to prepare a three-dimensional porous lithium metal composite anode material. As that preparation method has strong controllability, simple proces, low cost and easy industrialization, the preparation method can be used in the preparation industry of lithium metal battery electrode material, and the cycling stability of the electrode material is remarkably improved.

The invention discloses a preparation method of an Au / Ag co-modified Sn3O4 nano composite photocatalytic material. The nano composite material is an Au / Ag co-modified Sn3O4 nano composite material which is obtained through forming chemical bonds among the composite ingredients of the nano composite material to complex by using a wet chemistry in-situ synthesis method, in which ice baths are combined with solvent heat, in the solvent, surface active agent and reducing agent of chloroauric acid, silver nitrate and a tin source material. The composite material prepared by the invention utilizes the plasma resonance effect of Au / Ag binary metal nanoparticles, the oxygen vacancy defect effect of a Sn3O4 material and the excellent electron conduction of Au / Ag metal nanoparticles to realize rapidelectron-hole separation in the process of reducing and degrading pollutants through photocatalytic oxidation to collaborate with photocatalytic decomposition of water to generate hydrogen, thereby improving the efficiency of the photocatalytic decomposition of the water and the photocatalytic decomposition of Rhodamine B.

The present invention provides a high-performance, highly homogeneous, highly stable electronic device by forming an extremely uniform interface between an insulator and an organic semiconductor, as well as an electronic apparatus using the same. The present invention relates to an electronic device which contains, as a component, an organic thin film in which a geometric two-dimensional arrangement is formed regularly by interdigitating skeletal structures of a positive three-pronged shape of triptycene and by adding a first molecule extending out of one plane of a two-dimensional molecular structure of the triptycene skeletal structure. The invention also relates to an electronic apparatus and the like which contains the electronic device in the interior of the electronic apparatus.

The invention discloses a high-performance anti-corrosion TWIP / stainless steel multi-layer composite material and a preparation method. The composite material comprises multiple TWIP steel material layers and multiple stainless steel material layers, the TWIP steel material layers and the stainless steel material layers are laminated alternately and rolled together, and the surface layers of the composite material are all stainless steel layers; the thickness of each material layer in the multi-layer composite material is less than or equal to 0.05 millimeter, and the number of the TWIP steelmaterial layers is one less than that of the stainless steel material layers. According to the preparation method, based on the requirements for the mechanical properties of the material, subsequent process adjustment and control such as thermal treatment or cold rolling or annealing treatment and the like are conducted, and therefore the TWIP / stainless steel multi-layer composite steel with the high yield strength and the high product of strength and elongation is obtained. The composite material is composed of thin stainless steel and TWIP steel plate materials through multi-layer lamination, the advantages of the TWIP steel can be exerted, and the corrosion resistance performance and strength requirement of the material can be ensured.

The invention relates to a powder material for a laser melting deposition stainless steel-based composite material, and a preparation method. The preparation method comprises the steps of selecting the following components in mass fraction: 69 percent to 90 percent of stainless steel alloy powder, 7 percent to 20 percent of Cr3C2 powder, and 3 percent to 11 percent of Ti powder, and compounding; and utilizing a laser melting deposition in-situ reaction synthesis reinforcement phase technology for preparing a TiC reinforced stainless steel-based composite material. The production cycle for preparing the metal-based composite material at the present stage is remarkably reduced, the manufacturing efficiency and the manufacturing accuracy are improved, and the prepared composite material is uniform and compact in structure and favorable in mechanical performance, so that the service life of the laser melting deposition stainless steel component is remarkably prolonged; and meanwhile, the adding of precious metal is reduced, so that the production cost of the stainless steel is reduced, and great economic benefit and social benefit are realized.

The invention discloses a preparation method of a silicon wafer micro-nano turbid transparent composite suede. The method comprises the following steps: forming a micron-sized pitted surface layer onthe surface of a silicon wafer by sand blasting equipment; further manufacturing a nanoscale pitted surface layer on the surface of the micron-sized pitted surface layer, and finally forming a composite suede structure in which the nanoscale pitted surface layer is smooth and light-transmitting after complete turbidity removal and a low-reflection semitransparent turbidity layer is still reservedafter a micron-sized pitted surface layer etching process through an etching process. The technical process is simple, the depths of the micron-sized pitted surface layer and the nano pitted surface layer are stable and controllable, and the forming precision is high; according to the formed micro-nano turbid transparent composite structure, the light receiving area of the crystalline silicon of the solar cell is increased; the influence of the illumination angle is small, the received oblique light beams are large, weak sunlight of morning sunshine and sunset sunshine can be effectively responded, the manufactured solar cell piece can be horizontally placed, tiny nanoscale transparent shallow pits are quite beneficial to absorption of weak reflected light, and the utilization rate of theweak light of red oranges is comprehensively increased.

The present invention discloses a negatron compression rate-ultra-steep sub-threshold slope field effect transistor and a preparation method thereof. According to the technical scheme of the invention, in the sub-threshold region of a device, a first conventional gate dielectric layer and a second conventional gate dielectric layer form a conventional gate dielectric capacitor. A negatron compression-rate gate dielectric layer forms an NEC capacitor. In this way, the capacitance value of the conventional gate dielectric capacitor is larger than the absolute value of the NEC capacitor, so that the above two series capacitors are negative in value. The gate control coefficient is less than 1 and the gate leakage current is inhibited. As a result, the gate voltage has an exceptional control capability over the surface of a channel, so that the device is ultra-steep in sub-threshold slope. Meanwhile, considering the variation at the electronic scale, the NEC capacitor of the device enables the macroscopic properties of the device to be free of the hysteresis and the material fatigue resistance any more. Therefore, on the basis that the power consumption of the device is reduced, the NCFET problem of the traditional ferroelectric material is solved. For the industry development of low-power-consumption integrated circuits in the future, the negatron compression rate-ultra-steep sub-threshold slope field effect transistor and the preparation method thereof have a wide application prospect.

The invention discloses a deep ultraviolet light-emitting diode structure and a preparation method thereof, and aims to improve the electroluminescent spectral characteristics of the current deep ultraviolet light-emitting diode, especially reduce the full width at half maximum of the spectrum, improve the purity of light and improve the luminous efficiency of the light. Therefore, the effectiveness of application to sterilization and phototherapy is promoted. The light-emitting diode at least comprises a substrate, an AlN layer located on the surface of one side of the substrate, an N-type AlaGa1-aN ohmic contact layer located on the surface of the AlN layer, an AlbGa1-bN / AlN / AlcGa1-cN interface planarization multi-layer structure located on the surface of the N-type AlaGa1-aN ohmic contact layer, an AlxGa1-xN first quantum barrier layer located on the surface of the AlbGa1-bN / AlN / AlcGa1-cN interface planarization multi-layer structure, an AlyGa1-yN / AlxGa1-xN multi-quantum well active layer located on the surface of the AlxGa1-xN first quantum barrier layer, an AlzGa1-zN final quantum barrier layer located on the surface of the AlyGa1-yN / AlxGa1-xN multi-quantum well active layer, a P-type AldGa1-dN electron barrier layer located on the surface of the AlzGa1-zN final quantum barrier layer, and a P-type AleGa1-eN ohmic contact layer located on the surface of the P-type AldGa1-dN electron barrier layer.

The invention relates to a paper-based friction material with a uniform interface and a preparation method of the paper-based friction material, and belongs to the technical field of material preparation. The method comprises the steps of biologically modifying wollastonite fibers and silicon dioxide powder which are used as friction base materials by using hydrophilic aldehyde-enriched all-grass of Fragrant Elsholtzia so as to improve the dispersity, then co-blending natural rubber and phenolic resin for modification to obtain an adhesive, and finally preparing the paper-based friction material with the uniform interface by using a wet type papermaking method. According to the paper-based friction material and the preparation method, the dispersity of the friction base materials is improved by biological modification, so that friction material slurry can be dispersed more uniformly; finally, the co-blended adhesive is used for soaking the material and then realizes hot-press forming, so that the friction materials can be bonded more compactly, difficult in settling and flocculation and suitable for large-scale production; meanwhile, the paper-based friction material is high in wear resistance, and the wear rate is 0.85*10<-8> to 1.2*10<-8> cm<3> / J.

The invention discloses a method for forming an electron transport layer of a mesoscopic solar cell, and the method comprises the following steps: (1) performing ultraviolet ozone treatment on an electrode surface of a substrate to obtain a printing substrate; (2) depositing mesoporous titanium dioxide slurry on the printing substrate through the silk-screen printing technology to form a mesoporous titanium dioxide wet film; (3) placing the substrate with the mesoporous titanium dioxide wet film in a nitrogen atmosphere for standing, performing drying, and performing sintering in an air or oxygen atmosphere to obtain the mesoporous titanium dioxide electron transport layer. According to the method, the electron transport layer with uniform thickness can be efficiently obtained.

The invention discloses a cable for an instrument. The cable comprises a conductor and an insulation layer, wherein the insulation layer wraps the conductor, and the raw material of the insulation layer comprises the constituents based on parts by weight: 120-130 parts of main material, 15-25 parts of jute fiber, 10-20 parts of nanometer silicon dioxide, 30-50 parts of halloysite, 60-80 parts of bentonite, 15-25 parts of calcined clay, 3-5 parts of magnesium oxide, 0.8-1.2 parts of vulcanization accelerator DETU, 0.5-0.8 part of vulcanization accelerator MZ, 1-2 parts of 1,1-di-(tert-butylperoxy)-3,3,5-trimethylcyclohexane, 1.5-2.5 parts of trioctyl(n-octyl n-decyl phthalate), 0.5-1.5 parts of phenyl petroleum sulfonate and 1.8-3.6 parts of anti-aging agent. The cable is extremely excellent in aging resistance, water prevention and flexibility, has extremely good stability, is difficult to break and has extremely excellent tensional resistance, aging resistance and corrosion resistance.

The invention relates to a paper-based friction material with a uniform interface and a preparation method of the paper-based friction material, and belongs to the technical field of material preparation. The method comprises the steps of biologically modifying wollastonite fibers and silicon dioxide powder which are used as friction base materials by using hydrophilic aldehyde-enriched all-grass of Fragrant Elsholtzia so as to improve the dispersity, then co-blending natural rubber and phenolic resin for modification to obtain an adhesive, and finally preparing the paper-based friction material with the uniform interface by using a wet type papermaking method. According to the paper-based friction material and the preparation method, the dispersity of the friction base materials is improved by biological modification, so that friction material slurry can be dispersed more uniformly; finally, the co-blended adhesive is used for soaking the material and then realizes hot-press forming, so that the friction materials can be bonded more compactly, difficult in settling and flocculation and suitable for large-scale production; meanwhile, the paper-based friction material is high in wear resistance, and the wear rate is 0.85*10<-8> to 1.2*10<-8> cm<3> / J.

The invention discloses a Al2O3-TiC copper-based composite which is prepared by Cu powder, Al powder, TiO2 powder and C powder through an in-situ preparation method, wherein a ratio of a weight percent of the Al powder to a weight percent of the TiO2 powder to a weight percent of the C powder is equal to (8-10):(18-22):(2-5), and a sum of the weight percent of the Al powder, the weight percent of the TiO2 powder and the weight percent of the C powder is 1-10%. The prepared Al2O3-TiC copper-based composite comprises three phases, namely, Cu, Al2O3 and TiC and the particle sizes of Al2O3 and TiC reinforcement body particles are less than 100 nanometers. The Al2O3-TiC copper-based composite has the advantages of high strength, high hardness, good arcing erosion resistance, high wear resistance and high conductivity, and can meet the industrial development requirements at the present stage. The invention further discloses a preparation method of the Al2O3-TiC copper-based composite.

The invention relates to a method for preparing a three-component phononic crystal by using scattering objects. The method comprises the following steps: orderly arranging and uniformly coating the scattering objects in substrates, wherein the substrates are epoxy resins in different mixture ratios; the process of coating is implemented by using a molding mold consisting of an upper molding plate (1), a lower molding plate a (3) and a lower molding plate b (5); scrubbing the scattering objects by using acetone and arranging the scrubbed scattering objects in a semispherical hole (4) of the lower molding plate a; covering the upper molding plate at the upper end of the lower molding plate a; casting the epoxy resins from which air bubbles are removed into the lower molding plate a from a casting hole (2) of the upper molding plate (2); solidifying the scattering objects in a baking oven at the temperature of between 30 and 100 DEG C for 24 hours; turning the scattering objects coated and solidified by the epoxy resins for 180 degrees and placing the turned scattering objects into a concave volume of the lower molding plate b; and casting the epoxy resins onto the other sides of the scattering objects and solidifying the scattering objects in the baking oven at the temperature of between 30 and 100 DEG C for 24 hours to obtain the three-component phononiccrystal. The three-component phononic crystal has the characteristics of stable performance, uniform interface, strong designability and the like.

The invention relates to a metal lithium negative electrode with organic and inorganic dual protection layers. The invention belongs to the technical field of electrochemistry, and relates to the metal lithium negative electrode with the organic and inorganic dual protection layers and application of the metal lithium negative electrode in a secondary lithium battery. The protection layers are characterized in that an organic protection layer is built on a surface of the metal lithium negative electrode from one or more of acrylate containing amino, cyan, nitro or nitroso, one or more of acrylic organic matters except several types of the acrylates and one or more of small molecule compounds containing nitrogen, meanwhile, a nitrogen-containing part in the organic layer reacts with metal lithium to form an inorganic protection layer at an interface in an in-situ way, so that the organic and inorganic dual protection layers are formed. When the metal lithium negative electrode with the protection layers is applied to a lithium battery, the coulombic efficiency of the battery can be effectively improved by a synergistic effect of the organic layer and the inorganic layer, the growth of lithium dendrites is prevented, the safety problem is improved, and the cycle lifetime is prolonged.

The invention provides an image sensor forming method and a formed image sensor, and the method comprises the steps: forming a first lateral PN junction through at least one etching process and at least one epitaxial process before a grid electrode of the image sensor is formed, and the first lateral PN junction is used for isolating pixel units of the image sensor. According to the invention, the isolation region and the photosensitive region in the image sensor are formed by adopting etching and epitaxial processes, and the lateral PN junction is formed, so that the interface of the P-type semiconductor and the N-type semiconductor is more uniform, the damage to the semiconductor substrate caused by adopting a mode of ion implantation for multiple times can be avoided, and the influence of dark current and white pixels on light sensing is reduced.