36results about How to "Uniform interface" patented technology

The present invention intends to provide a method for manufacturing a semiconductor device in which source/drain extension regions having a uniform depth are created with high reproducibility. This objective is achieved by the following method: A gate electrode 24 is formed on a semiconductor substrate 21 via a gate insulator 23. The portion of the semiconductor substrate 21 other than the gate electrode 24 is irradiated with an ultra-short pulsed laser light having a pulse width within a range from 10 to 1000 femtoseconds in order to create an amorphous layer 26a. Then, recesses 27 are created in the semiconductor substrate 21 by selectively etching the amorphous layer 26a. The recesses 27 are filled with semiconductor layers 28 whose impurity concentration is higher than that of the semiconductor substrate 21, and the source/drain extension regions 31 are created there. Within the region other than the gate electrode 24 and the source/drain extension regions 31, Deep diffusion layers 30 deeper than the source/drain extension regions 31 are created.

The invention discloses a novel polymer lithium battery and a relative preparation method. The invention modifies the baffle membrane of general liquid lithium battery, adds chemical crosslink agent monomer with high boiling point into anode slurry and cathode slurry used for preparing liquid lithium battery, fills liquid lithium battery electrolyte with thermal initiator, to process thermal solidification, to obtain a novel polymer lithium battery. The invention can use general production process and device of prior liquid lithium battery, with the support for batch production of polymer battery, while the novel battery has same electric property of liquid battery.

The invention relates to a method for preparing a three-component phononic crystal by using scattering objects. The method comprises the following steps: orderly arranging and uniformly coating the scattering objects in substrates, wherein the substrates are epoxy resins in different mixture ratios; the process of coating is implemented by using a molding mold, wherein the molding mold consists of an upper molding plate (1), a lower molding plate a (3) and a lower molding plate b (5); scrubbing the scattering objects by using acetone and arranging the scrubbed scattering objects in a semispherical hole (4) of the lower molding plate a; covering the upper molding plate at the upper end of the lower molding plate a; casting the epoxy resins from which air bubbles are removed into the lower molding plate a from a casting hole (2) of the upper molding plate (2); solidifying the scattering objects in a baking oven at the temperature of between 30 and 100 DEG C for 24 hours; turning the scattering objects coated and solidified by the epoxy resins for 180 degrees and placing the turned scattering objects into a concave volume of the lower molding plate b; and casting the epoxy resins onto the other sides of the scattering objects and solidifying the scattering objects in the baking oven at the temperature of between 30 and 100 DEG C for 24 hours to obtain the three-component phononic crystal. The three-component phononic crystal has the characteristics of stable performance, uniform interface, strong designability and the like.

The invention discloses a preparation method of a wood-plastic material coated with modified nano particle wood powder. The preparation method comprises the following steps: adding wood powder into a tetraethyl orthosilicate water solution according to a weight ratio of wood powder to tetraethyl orthosilicate of 2.8-3.2:8-12, stirring for two hours to obtain a mixed solution; then dropwise adding a silane coupling agent into the mixed solution under stirring according to a weight ratio of silane coupling agent to tetraethyl orthosilicate of 3-5:40, carrying out reactions for 0.5 hour to obtain a modified wood powder solution; then subjecting the obtained modified wood powder solution to treatments of suction filtration, washing, and drying to obtain modified wood powder; mixing the modified wood powder with polypropylene particles according to a weight ratio of 35-45:55-65, transferring the mixture to a screw extruder, and moulding. The provided wood-plastic material can be used to produce high-performance wood-plastic products having the advantages of high mechanical strength, heat resistance, stable structure, and long service life, and can be widely used in fields such as construction materials, outdoor pavilions, indoor/outdoor floors and furniture, and the like.

The invention relates to a short carbon fiber reinforced Csf/SiC ceramic matrix composite material and a preparation method thereof. The preparation method of the short carbon fiber reinforced Csf/SiCceramic matrix composite material comprises the steps: (1) mixing short carbon fibers, a dispersing agent, a binder and a solvent to obtain short carbon fiber slurry; (2) carrying out 3D printing molding on the obtained short carbon fiber slurry to prepare a short carbon fiber directionally-arranged reinforcement; and (3) drying and degumming the obtained reinforcement, then preparing an interface phase and a part of SiC matrix, and finally, carrying out a densification process to obtain the short carbon fiber reinforced Csf/SiC ceramic matrix composite material.

The invention discloses a composite molding preparation method of three-component phononic crystal, comprising a mould structure design method and a three-component phononic crystal composite preparation method developed around a mould. The mould is composed of a first molding plate (1), a second molding plate (2), a third molding plate (3), a fourth molding plate (4) and a fifth molding plate (5), wherein the first molding plate and the second molding plate form a two-component phononic crystal composed of an oscillator and a wrapping body; the third molding plate, the fourth molding plate and the fifth molding plate prepare the three-component phononic crystal composed of the two-component phononic crystal and a substrate. The invention is a composite molding preparation method which not only contains grouping shaping but also contains layering shaping, and can prepare the three-component phononic crystal with low cost. The prepared three-component phononic crystal has the advantages of favorable combination property, stable performance, even interface, strong designability and the like.

The present invention discloses a negatron compression rate-ultra-steep sub-threshold slope field effect transistor and a preparation method thereof. According to the technical scheme of the invention, in the sub-threshold region of a device, a first conventional gate dielectric layer and a second conventional gate dielectric layer form a conventional gate dielectric capacitor. A negatron compression-rate gate dielectric layer forms an NEC capacitor. In this way, the capacitance value of the conventional gate dielectric capacitor is larger than the absolute value of the NEC capacitor, so that the above two series capacitors are negative in value. The gate control coefficient is less than 1 and the gate leakage current is inhibited. As a result, the gate voltage has an exceptional control capability over the surface of a channel, so that the device is ultra-steep in sub-threshold slope. Meanwhile, considering the variation at the electronic scale, the NEC capacitor of the device enables the macroscopic properties of the device to be free of the hysteresis and the material fatigue resistance any more. Therefore, on the basis that the power consumption of the device is reduced, the NCFET problem of the traditional ferroelectric material is solved. For the industry development of low-power-consumption integrated circuits in the future, the negatron compression rate-ultra-steep sub-threshold slope field effect transistor and the preparation method thereof have a wide application prospect.

The invention discloses a fly ash based composite material, which is prepared from fly ash and zinc hydroxide or zinc oxide coating the surface of the fly ash. The fly ash based composite material is a material of a core-shell structure using the coal ash as a core and using the zinc hydroxide or zinc oxide as a case; the fly ash based composite material has good whiteness; the application range is greatly expanded; the antibacterial activity value is high; the durable antibacterial performance of the zinc oxide is good; the fly ash based composite material can be used for preparing an antibacterial coating; the coating stability is high. The raw material cost is low; the waste material reutilization can be realized; the added value of the fly ash can be greatly improved; the application prospects are very good.

The invention discloses a three-dimensional porous lithium metal composite negative electrode material and a preparation method and application thereof. At first, that weave stainless steel mesh is pickled and dry to obtain clean and dry stainless steel mesh current collector; A low-temperature surface nitriding treatment is then carry out in a glow plasma nitriding furnace, wherein that treatmenttemperature is 300-500 DEG C and the treatment time is 0.1-5 hours; Finally, the nitrogen-doped stainless steel mesh and the lithium sheet are mechanically pressed by a tablet press to prepare a three-dimensional porous lithium metal composite anode material. As that preparation method has strong controllability, simple proces, low cost and easy industrialization, the preparation method can be used in the preparation industry of lithium metal battery electrode material, and the cycling stability of the electrode material is remarkably improved.

The present invention provides a high-performance, highly homogeneous, highly stable electronic device by forming an extremely uniform interface between an insulator and an organic semiconductor, as well as an electronic apparatus using the same. The present invention relates to an electronic device which contains, as a component, an organic thin film in which a geometric two-dimensional arrangement is formed regularly by interdigitating skeletal structures of a positive three-pronged shape of triptycene and by adding a first molecule extending out of one plane of a two-dimensional molecular structure of the triptycene skeletal structure. The invention also relates to an electronic apparatus and the like which contains the electronic device in the interior of the electronic apparatus.

The invention discloses a preparation method of a silicon wafer micro-nano turbid transparent composite suede. The method comprises the following steps: forming a micron-sized pitted surface layer onthe surface of a silicon wafer by sand blasting equipment; further manufacturing a nanoscale pitted surface layer on the surface of the micron-sized pitted surface layer, and finally forming a composite suede structure in which the nanoscale pitted surface layer is smooth and light-transmitting after complete turbidity removal and a low-reflection semitransparent turbidity layer is still reservedafter a micron-sized pitted surface layer etching process through an etching process. The technical process is simple, the depths of the micron-sized pitted surface layer and the nano pitted surface layer are stable and controllable, and the forming precision is high; according to the formed micro-nano turbid transparent composite structure, the light receiving area of the crystalline silicon of the solar cell is increased; the influence of the illumination angle is small, the received oblique light beams are large, weak sunlight of morning sunshine and sunset sunshine can be effectively responded, the manufactured solar cell piece can be horizontally placed, tiny nanoscale transparent shallow pits are quite beneficial to absorption of weak reflected light, and the utilization rate of theweak light of red oranges is comprehensively increased.

The invention discloses a deep ultraviolet light-emitting diode structure and a preparation method thereof, and aims to improve the electroluminescent spectral characteristics of the current deep ultraviolet light-emitting diode, especially reduce the full width at half maximum of the spectrum, improve the purity of light and improve the luminous efficiency of the light. Therefore, the effectiveness of application to sterilization and phototherapy is promoted. The light-emitting diode at least comprises a substrate, an AlN layer located on the surface of one side of the substrate, an N-type AlaGa1-aN ohmic contact layer located on the surface of the AlN layer, an AlbGa1-bN/AlN/AlcGa1-cN interface planarization multi-layer structure located on the surface of the N-type AlaGa1-aN ohmic contact layer, an AlxGa1-xN first quantum barrier layer located on the surface of the AlbGa1-bN/AlN/AlcGa1-cN interface planarization multi-layer structure, an AlyGa1-yN/AlxGa1-xN multi-quantum well active layer located on the surface of the AlxGa1-xN first quantum barrier layer, an AlzGa1-zN final quantum barrier layer located on the surface of the AlyGa1-yN/AlxGa1-xN multi-quantum well active layer, a P-type AldGa1-dN electron barrier layer located on the surface of the AlzGa1-zN final quantum barrier layer, and a P-type AleGa1-eN ohmic contact layer located on the surface of the P-type AldGa1-dN electron barrier layer.

The invention discloses a cable for an instrument. The cable comprises a conductor and an insulation layer, wherein the insulation layer wraps the conductor, and the raw material of the insulation layer comprises the constituents based on parts by weight: 120-130 parts of main material, 15-25 parts of jute fiber, 10-20 parts of nanometer silicon dioxide, 30-50 parts of halloysite, 60-80 parts of bentonite, 15-25 parts of calcined clay, 3-5 parts of magnesium oxide, 0.8-1.2 parts of vulcanization accelerator DETU, 0.5-0.8 part of vulcanization accelerator MZ, 1-2 parts of 1,1-di-(tert-butylperoxy)-3,3,5-trimethylcyclohexane, 1.5-2.5 parts of trioctyl(n-octyl n-decyl phthalate), 0.5-1.5 parts of phenyl petroleum sulfonate and 1.8-3.6 parts of anti-aging agent. The cable is extremely excellent in aging resistance, water prevention and flexibility, has extremely good stability, is difficult to break and has extremely excellent tensional resistance, aging resistance and corrosion resistance.