The utility model belongs to
silicon carbide crystal preparation technical field relates to a kind of for controlling the
airflow guide structure of
silicon carbide crystal growth interface, including shell, upper
graphite sheet, middle
graphite sheet and lower
graphite sheet.The utility model utilizes the spherical
surface structure of lower graphite sheet lower part to guide the
vaporization of edge to center convergence and from multiple third through-holes, when passing through middle graphite sheet, utilize the annular structure of middle graphite sheet to make the
vaporization of center fast pass, the
vaporization of edge is blocked by multiple second through-holes and slowly pass, finally make the vaporization uniform through multiple first through-holes, so that the vaporization is crystallized on the surface of
seed crystal uniformly, avoid the concentration of edge vaporization greater than the concentration of center vaporization caused by the temperature of edge
silicon carbide powder higher than the temperature of center
silicon carbide powder, make the
crystal ingot interface more uniform in the initial stage of
crystal growth, improve the stability of
silicon carbide crystal growth process.