43results about How to "High mobility）" patented technology

The present invention provides a Group III nitride compound semiconductor with suppressed generation of threading dislocations. A GaN layer 31 is subjected to etching, so as to form an island-like structure having a shape of, for example, dot, strip, or grid, thereby providing a trench / mesa structure, and a mask 4 is formed at the bottom of the trench such that the upper surface of the mask 4 is positioned below the top surface of the GaN layer 31. A GaN layer 32 is lateral-epitaxially grown with the top surface 31a of the mesa and sidewalls 31b of the trench serving as nuclei, to thereby bury the trench, and then epitaxial growth is effected in the vertical direction. In the upper region of the GaN layer 32 formed above the mask 4 through lateral epitaxial growth, propagation of threading dislocations contained in the GaN layer is 31 can be prevented.

A two-step sc-SWCNT enrichment process involves a first step based on selective dispersion and extraction of semiconducting SWCNT using conjugated polymer followed by a second step based on an adsorptive process in which the product of the first step is exposed to an inorganic absorptive medium to selectively bind predominantly metallic SWCNTs such that what remains dispersed in solution is further enriched in semiconducting SWCNTs. The process is easily scalable for large-diameter semi- conducting single-walled carbon nanotube (sc-SWCNT) enrichment with average diameters in a range, for example, of about 0.6 to 2.2 nm. The first step produces an enriched sc-SWCNT dispersion with a moderated sc-purity (98%) at a high yield, or a high purity (99% and up) at a low yield. The second step can not only enhance the purity of the polymer enriched sc-SWCNTs with a moderate purity, but also further promote the highly purified sample to an ultra-pure level. Therefore, this two-step hybrid process provides sc-SWCNT materials with a super high purity, as well as both a high sc-purity (for example greater than 99%) and a high yield (up to about 20% or higher).

The light-emitting display device comprises first and second thin film transistors. The first thin film transistor includes a first gate electrode; a first oxide semiconductor film; and a first electrode and a second electrode which are electrically connected to the first oxide semiconductor film. The second thin film transistor includes a second gate electrode electrically connected to the second electrode; a second oxide semiconductor film; a third electrode; a light-emitting layer and a fourth electrode over the second oxide semiconductor film. A work function of the second oxide semiconductor film is higher than a work function of the fourth electrode.

A filter for a mass- or mobility-spectrometer that bars gases or vapors of a high-pressure ion source, as well as ions of high mobility and charged droplets, from entering an evacuated mass spectrometer or a mobility spectrometer at a lower pressure than the filter. The buffer gas of the high pressure ion source is blown into the volume of this filter directly or through tubes from where buffer gas and embedded ions are sucked through the aperture of a diaphragm or through an aperture of a capillary mainly from an “extraction volume” filled with a separately supplied clean gas, into which ions of interest are pushed by electric fields formed by electrodes that are substantially rotational symmetric around the “extraction volume” and a substantially flat electrode with respect to an axis of ion extraction and the end of the capillary and the end of a coaxial tube surrounding the capillary.

The present memory device has first and second electrodes, a passive layer between the first and second electrodes and on and in contact with the first electrode, and an active layer between the first and second electrodes and on and in contact with the passive layer and second electrode, for receiving a charged specie from the passive layer. The active layer is a mixture of (i) a first polymer, and (ii) a second polymer for enhancing ion transport, improving the interface and promoting a rapid and substantially uniform distribution of the charged specie in the active layer, i.e., preventing a localized injection of the charged species. These features result in a memory element with improved stability, a more controllable ON-state resistance, improved switching speed and a lower programming voltage.

An offset transistor and a non-offset transistor each including an oxide semiconductor are formed over one substrate. An oxide semiconductor layer, a gate insulator, and first layer wirings which serve as gate wirings are formed. After that, the offset transistor is covered with a resist and impurities are mixed into the oxide semiconductor layer, so that an n-type oxide semiconductor region is formed. Then, second layer wirings are formed. Through the above steps, the offset transistor and the non-offset transistor (e.g., aligned transistor) can be formed.

An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor. The small molecule semiconductor in the semiconducting layer has a crystallite size of less than 100 nanometers. Devices formed from the composition exhibit high mobility and excellent stability.

The invention discloses an all-inorganic perovskite single crystal-based radiation detector, which comprises an all-inorganic perovskite single crystal for converting high energy radiation into an electron-hole pair, and two electrodes for collecting the electron-hole pair respectively arranged above two sides of the all-inorganic perovskite single crystal. The invention also provides a method for preparing the radiation detector by a combination of a solution method, a Bridgman method and a vapor deposition method. The preparation process is simple and convenient to operate. The all-inorganic perovskite single crystal in the radiation detector has the advantages of adjustable forbidden bandgap width, high carrier mobility, good bipolar charge transmission characteristics, and exciton diffusion length of more than 1 mu m. The radiation detector has the advantages of simple structure, reasonable design, excellent stability, and broad application prospect.

A symbol time synchronization method for OFDM systems is disclosed. The invention presents a joint maximum-likelihood (ML) synchronization method for symbol time offset (STO) for OFDM systems. The method is developed in frequency-domain under time-variant multipath channels. By analyzing the received frequency-domain data, a mathematical model for the joint effects of symbol time offset (STO), carrier frequency offset (CFO) and sampling clock frequency offset (SCFO) is derived. The results are used to formulate a log-likelihood function of two consecutive symbols. The joint estimation's method is robust, because it exhibits high performances in high mobility and time-variant multipath fading channels.

Disclosed is a semiconductor device having a driver circuit operable at high speed and a method for manufacturing same. An active matrix liquid crystal display device uses a polysilicon film for its TFT active layer constituting a pixel matrix circuit because of low off current characteristics. On the other hand, a TFT active layer constituting driver circuits and a signal processing circuit uses a poly silicon germanium film because of high speed operation characteristics.

Disclosed is a process for purifying monomers of Formula (II): wherein R1 and R2 are independently selected from alkyl, substituted alkyl, aryl, substituted aryl, alkoxy, substituted alkoxy, and halogen; and R′ is selected from hydrogen, alkyl, substituted alkyl, aryl, substituted aryl, alkoxy, substituted alkoxy, and halogen. After the monomer is synthesized, it is purified by column chromatography using neutral alumina and hexane as an eluent. The resulting product can also be further recrystallized using isopropanol, hexane, heptane, or toluene. Polymers formed from the purified monomer exhibit higher mobility and increased reproducibility of the mobility.

The inventions disclosed, described, and / or claimed herein relate to copolymers comprising copolymers comprising electron accepting A subunits that comprise thiazolothiazole, benzobisthiazole, or benzobisoxazoles rings, and electron donating subunits that comprise certain heterocyclic groups. The copolymers are useful for manufacturing organic electronic devices, including transistors and solar cells. The invention also relates to certain synthetic precursors of the copolymers. Methods for making the copolymers and the derivative electronic devices are also described.

To provide an organic thin film transistor including a pair of electrodes for allowing a current to flow through an organic semiconductor layer made of an organic semiconductor material, and a third electrode, wherein the organic semiconductor material is composed mainly of an arylamine polymer having a weight-average molecular weight (Mw) of 20,000 or more.

A thin film transistor has a semiconducting layer comprising a polythiophene and carbon nanotubes. The semiconducting layer exhibits high mobility and high current on / off ratio.

Provided are a solar cell that can be manufactured by non-vacuum process and can have more excellent photoelectric conversion efficiency and a manufacturing method therefor as well as such a semiconductor device and a manufacturing method therefor. A solar cell, includes at least a first semiconductor layer (140) and a second semiconductor layer (130). The first semiconductor layer (140) includes metal oxide particles of 1 nm or more and 500 nm or less in average particle size and a compound having relative permittivity of 2 or more and 1,000 or less. For instance, the content of the organic compound in the first semiconductor layer (140) is 10 mass % or more and 90 mass % or less.

Provided is a thin film transistor that has high mobility and excellent stress resistance and is good typically in adaptability to wet etching process. The thin film transistor includes a substrate, and, disposed on the substrate in the following sequence, a gate electrode, a gate insulator film, oxide semiconductor layers, source-drain electrodes, and a passivation film that protects the source-drain electrodes. The oxide semiconductor layers have a first oxide semiconductor layer including In, Ga, Zn, Sn, and O, and a second oxide semiconductor layer including In, Ga, Sn, and O. The second oxide semiconductor layer is disposed on the gate insulator film. The first oxide semiconductor layer is disposed between the second oxide semiconductor layer and the passivation film. The atomic ratios in contents of the individual metal elements to all the metal elements constituting the first and the second oxide semiconductor layers are controlled to predetermined ratios.

An electronic device material comprising at least an electronic device substrate and a silicon oxynitride film disposed on the substrate is provided. The silicon oxynitride film is characterized by containing nitrogen atoms in a large amount in the vicinity of the oxynitride film surface when the nitrogen content distribution in the thickness direction of the silicon oxynitride film is examined by SIMS (secondary ion mass spectrometry) analysis. By virtue of this constitution, an electronic device material comprising an oxynitride film having an excellent effect of preventing penetration of boron and having excellent gate leak properties can be obtained.

Dithienobenzodithiophenes of general formula (I) in which R1 to R6 are each independently selected from a) H, b) halogen, c) —CN, d) —NO2, e) —OH, f) a C1-20 alkyl group, g) a C2-20 alkenyl group, h) a C2-20 alkynyl group, i) a C1-20 alkoxy group, j) a C1-20 alkylthio group, k) a C1-20 haloalkyl group, I) a —Y—C3-10 cycloalkyl group, m) a —Y—C6-14 aryl group, n) a —Y-3-12 membered cyclo-heteroalkyl group, or o) a —Y-5-14 membered heteroaryl group, wherein each of the C1-20 alkyl group, the C2-20 alkenyl group, the C2-20 alkynyl group, the C3-10 cycloalkyl group, the C6-14 aryl group, the 3-12 membered cyc-loheteroalkyl group, and the 5-14 membered heteroaryl group is optionally substituted with 1-4 R7 groups, wherein R1 and R3 and R2 and R4 may also together form an aliphatic cyclic moiety, Y is independently selected from divalent a C1-6 alkyl group, a divalent C1-6 haloalkyl group, or a covalent bond; and m is independently selected from 0, 1, or 2. The invention also relates to the use of the dithienobenzodithiophenes according to any of claims 1 to 4 as semiconductors or charge transport materials, as thin-film transistors (TFTs), or in semiconductor components for organic light-emitting diodes (OLEDs), for photovoltaic components or in sensors, as an electrode material in batteries, as optical waveguides or for electrophotography applications.

A thin-film transistor (TFT) with dual-layer source and drain electrodes is provided. Each source and drain electrode comprises a first layer and a second layer. The first layer has a work function which differs from the energy level of the semiconductor by at least 0.5 eV and the second layer has a work function matching the energy level of the semiconductor. The semiconductor has a short channel length.

The invention discloses a planetary type triangular crawler running and driving device. The planetary type triangular crawler running and driving device is mainly used for vehicles which perform scout, transportation or combat along with soldiers under the environment with complex terrain, many obstacles and dangerous circumstances. The planetary type triangular crawler running and driving deviceis mainly composed of a rocker arm, a triangular supporting frame, gears, a driving motor, transmission devices, hydraulic cylinders, driving wheels and a crawler. The rocker arm is fixed to movable devices such as a vehicle body and supported, the driving motor transmits power to the driving wheels through the gears and the transmission devices, and the driving wheels mesh with the crawler to drive the integrity to move forward. According to the planetary type triangular crawler running and driving device, the triangular supporting frame and the rocker arm are connected through bearings and under a free rotating state, when the crawler meets an obstacle, the triangular supporting frame can overturn freely, the crawler is tightly attached to the obstacle to maintain the ground gripping force or overturn the obstacle, and the whole running device has the high terrain adapting capacity; and meanwhile, when the crawler is broken and fractured, the planetary type triangular crawler runningand driving device can still run under a wheel state due to the fact that the driving wheels have power.

The invention relates to a heat-energy-free novel integrated efficient polycarboxylic acid water reducer and a preparation method therefor. The water reducer is obtained by polymerizing a polymerizable organic acid small monomer with a carboxylic acid group and a polymerizable polyether TPEG large monomer with a long chain at normal temperature. The water reducer is simple in reaction, free of heat energy consumption, short in reaction time and safe and pollution-free in production process. The water reducing rate can reach 45-50%. By adopting he water reducer, the doping amount of mineral admixtures in concrete can be properly improved, the cost of building materials is lowered, and the performance of concrete is improved. The water reducer is small in doping amount, strong in anti-clay ability and high in comprehensive cost performance, and is widely applied to preparing concrete with super-durability.

The present invention provides a semiconductor device, a single-crystal semiconductor thin film-including substrate, and production methods thereof, each allowing single-crystal semiconductor thin film-including single-crystal semiconductor elements produced by being transferred onto a low heat resistant insulating substrate to have enhanced transistor characteristics and a reduced wiring resistance.The present invention is a production method of a semiconductor device including single-crystal semiconductor thin film-including single-crystal semiconductor elements on an insulating substrate,the production method including a heat treatment step of subjecting a single-crystal semiconductor thin film to a heat treatment at 650° C. or higher,the single-crystal semiconductor thin film including at least part of each one of single-crystal semiconductor elements and boded to an intermediate substrate with a heat-resistant temperature higher than that of the insulating substrate.

An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface. Then the semiconductor layer is irradiated with continuous wave laser light for melting and crystallization or recrystallization, through which a region where the concentration of the impurity is constant is formed in the semiconductor layer. The continuous wave laser light irradiation may bring the semiconductor layer to the crystalline phase from the amorphous phase as long as the impurity element is re-distributed. The impurity is segregated through this process to newly create a high concentration region. However, this region is removed and no problem arises.

Provided is a field effect transistor having an organic semiconductor layer, in which crystal grains having a maximum diameter of 10 μm or more account for 25% or more of the surface area of the organic semiconductor layer. The organic semiconductor layer preferably contains 7 to 200 crystal grains having a maximum diameter of 10 μm or more per 0.01 mm2. The organic semiconductor layer preferably contains a porphyrin crystal.

A semiconductor device with a high-quality epitaxial layer and a method of manufacturing the same. The semiconductor device may include: a substrate; a fin-shaped first semiconductor layer spaced apart from the substrate; a second semiconductor layer at least partially surrounding a periphery of the first semiconductor layer; an isolation layer formed on the substrate, exposing at least a part of the second semiconductor layer, wherein the exposed part of the second semiconductor layer extends in a fin shape; and a gate stack formed on the isolation layer and intersecting the second semiconductor layer.

The present invention provides a high-performance, highly homogeneous, highly stable electronic device by forming an extremely uniform interface between an insulator and an organic semiconductor, as well as an electronic apparatus using the same. The present invention relates to an electronic device which contains, as a component, an organic thin film in which a geometric two-dimensional arrangement is formed regularly by interdigitating skeletal structures of a positive three-pronged shape of triptycene and by adding a first molecule extending out of one plane of a two-dimensional molecular structure of the triptycene skeletal structure. The invention also relates to an electronic apparatus and the like which contains the electronic device in the interior of the electronic apparatus.

The invention discloses a semi-fluoroalkyl containing side chain substituted pyrrolo pyrroledione polymer, and particularly relates to the semi-fluoroalkyl containing side chain substituted pyrrolo pyrroledione polymer as well as a preparation method and an application of the semi-fluoroalkyl containing side chain substituted pyrrolo pyrroledione polymer. The provided synthesis route has the advantages of simplicity, high efficiency, low synthesis cost, good universality and repeatability, and the like, and can be popularized and applied to the synthesis of pyrrolo pyrroledione polymers of other various substituent groups. The migration rate of OTFTs (Organic Thin Film Transistors) prepared by taking the polymer PC10DPPBT as an organic semiconductor layer is as high as 0.0082 cm<2> / V.s, and the excellent application prospect of the polymer material in the OTFTs is fully shown.

The invention discloses a method for realizing call forwarding and information notice on a WiMAX (Worldwide Interoperability for Microwave Access) mobile terminal, which comprises the following steps: a WiMAX server broadcasts calling handshaking information to a WiMAX network, and waits for the response and connecting of the corresponding WiMAX mobile terminal; and the WiMAX server extracts a call forwarding number and an email address which are set by a user from a database if the WiMAX server cannot receive the response of the corresponding WiMAX mobile terminal, calls the call forwarding number which is set by the user, and sends an email to the email address which is set by the user. By using the method, a system that the call forwarding and the information notice can be implemented through the WiMAX network, a GSM network and an Internet network is realized, and the combined use of multimodal forwarding and notices can reduce the calling loss effectively.

A semiconductor composition for producing a semiconducting layer with consistently high mobility is disclosed. The semiconductor composition includes a diketopyrrolopyrrole-thiophene copolymer and a non-aromatic halogenated hydrocarbon solvent. The copolymer has a structure disclosed within. Preferably, the non-aromatic halogenated hydrocarbon solvent contains at least 2 carbon atoms and at least 3 halogen atoms.

An electronic device material comprising at least an electronic device substrate and a silicon oxynitride film disposed on the substrate is provided. The silicon oxynitride film is characterized by containing nitrogen atoms in a large amount in the vicinity of the oxynitride film surface when the nitrogen content distribution in the thickness direction of the silicon oxynitride film is examined by SIMS (secondary ion mass spectrometry) analysis. By virtue of this constitution, an electronic device material comprising an oxynitride film having an excellent effect of preventing penetration of boron and having excellent gate leak properties can be obtained.