Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Spectrum selective photoelectric detector and preparation method thereof

A photodetector and selective technology, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of poor spectral selectivity and achieve the effect of improving resolution and high spectral selectivity of visible photodetectors

Active Publication Date: 2012-08-29
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
View PDF5 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This structure avoids the introduction of "filter", but is limited by the wide half-maximum width (above 100 nm) of the metal structure extinction peak, and its spectral selectivity is poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Spectrum selective photoelectric detector and preparation method thereof
  • Spectrum selective photoelectric detector and preparation method thereof
  • Spectrum selective photoelectric detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0035] figure 1 Shown is the structural diagram of the first embodiment of the spectrally selective photodetector. Where x, y and z represent the coordinate axes x-axis, y-axis and z-axis respectively.

[0036] figure 2 Shown is a cross-sectional structure diagram of the first embodiment of the spectrally selective photodetector. Where x, y and z represent the coordinate axes x-axis, y-axis and z-axis respectively.

[0037] The present invention provides a spectrally selective photodetector, including a substrate 101, an N-type doped semiconductor layer 102, a plasmonic structure layer, and tin-doped indium oxide (Indium Tin Oxides, ITO for short) sequentially arranged on the substrate 101. ) layer 104, the plasmonic structure layer includes a plurality of dielectric structural units 103, each dielectric structural unit 103 includes a strip-shaped main absorption window 105 and a pair of strip-shaped absorption adjustment windows 106 with the same structural size, the stri...

no. 2 Embodiment approach

[0054] This specific embodiment provides a method for preparing a spectrally selective photodetector as described above, comprising the steps of:

[0055] 1) Provide base 101;

[0056] 2) growing an N-type doped semiconductor layer 102 on the exposed surface of the substrate 101;

[0057] 3) sequentially growing an adhesion layer and a plasmonic structure layer on the exposed surface of the N-type doped semiconductor layer 102 and patterning the plasmonic structure layer to form a plurality of dielectric structural units 103;

[0058] 4) growing an insulating medium on the exposed surface of the plasmonic structure layer to isolate the strip-shaped absorption adjustment window 106 and the strip-shaped main absorption window 105, and using chemical mechanical polishing to polish the insulating medium until the dielectric structural unit 103 is exposed;

[0059] 5) Growing an ITO layer 104 on the exposed surface of the plasmonic structure layer.

[0060] As an optional impleme...

Embodiment 1

[0068] image 3 Shown is the horizontal interface structure of the plasmonic structure layer of the embodiment of a spectrally selective photodetector described above.

[0069] This embodiment provides a spectrally selective photodetector, which includes a substrate, an N-type doped semiconductor layer, a plasmon structure layer / adhesion layer, and an ITO layer. The plasmonic structure layer / adhesion layer is placed on the exposed surface of the N-type semiconductor layer, and the ITO layer is placed on the exposed surface of the plasmonic structure layer / adhesive layer.

[0070] The plasmonic structure layer / adhesion layer means that the adhesion layer and the plasmonic structure layer are sequentially disposed on the N-type doped semiconductor layer in a direction away from the N-type doped semiconductor layer.

[0071] The plasmonic structure layer includes a plurality of dielectric structural units arranged periodically, and each dielectric structural unit includes a stri...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a spectrum selective photoelectric detector and a preparation method thereof, which comprises a substrate, and a plasmon structure layer and a tin indium oxide layer which are sequentially arranged on the substrate, the plasmon structure layer comprises a plurality of medium structure units, each medium structure unit comprises a strip type main absorbing window and one pair or multiple pairs of strip type absorbing adjustment windows, and the strip type absorbing adjustment windows are positioned on one side or two sides of the strip type main absorbing window. The invention also provides a preparation method for the spectrum selective photoelectric detector, which comprises the following steps that: 1) the substrate is provided; 2) the plasmon structure layer is grown on the substrate and is graphed to form the medium structure unit; and 3) the tin indium oxide layer is grown on the plasmon structure layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a spectrally selective photodetector and a preparation method thereof. Background technique [0002] A photodetector is a device that detects photons. Photon detection technology has broad and important application prospects in both military and civilian fields. For example, in the civilian field, it can be used in fire monitoring, optical communication, environmental monitoring, medical care, etc.; , ultraviolet / infrared composite guidance and missile detection have a wide range of applications. [0003] The working process of the photodetector includes the following three steps: (1) incident light generates carriers; (2) carrier transport and multiplication by some possible current gain mechanism; (3) interaction between current and external circuit The role is to provide an output signal. In step (1), the incident light needs to generate photogenerated...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/101H01L31/0216H01L31/18
Inventor 张传杰王建峰黄增立徐科
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com