ZnO quantum dot-based deep UV sensor and preparation method thereof

Abstract

The invention relates to a ZnO quantum dot-based deep UV sensor and a preparation method thereof. A superfine ZnO quantum dot network structure serves as an active photoelectric response layer; the ZnO quantum dot-based deep UV sensor is prepared after the preparation of ZnO quantum dots. In the prior art, the switching of photocurrent is very slow due to oxygen adsorption and desorption generating on the surface of ZnO, and an effective Schottky-barrier is difficult to be designed in a device. The novel ZnO quantum dot-based deep UV sensor is designed through a simple and low-cost self-assembling process has the advantages that the problems in the prior art are solved; the spectrum selectivity is high; the optical switch action is stable; the photocurrent responsiveness is high; the response speed is high; the photocurrent switching characteristic is remarkable, fast and stable; the photocurrent on-off ratio is larger than 103; both the photocurrent rising time and decaying time are shorter than 1s; the response speed of the UV sensor is increased.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a ZnO quantum dot-based deep ultraviolet sensor and a preparation method. Background technique [0002] Ultraviolet (UV) sensor devices have a wide range of demands in the industrial and scientific fields, such as the monitoring of high-temperature flames, missile plumes, ambient light detection, optical switches and optical communications, etc., have direct application prospects. Zinc oxide (ZnO) is a typical wide bandgap semiconductor (E g ~3.4eV), which has better exciton binding energy (E b ~60meV), is one of the ideal materials for developing UV detectors. In recent years, one-dimensional nanobuilding blocks such as ZnO nanowires, nanorods, and nanoribbons have been widely used to design UV detectors due to the natural electron transport channels and large specific surface area of ​​one-dimensional nanomaterials. However, in one-dimensional nano-UV detectors with ohmic...

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Problems solved by technology

However, designing an efficient Schottky barrier in devices remains a daunting task

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