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Method for producing 541 nano narrow band-pass photoelectric detector

A photodetector, nano-narrowband technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of high level of counterfeiting, can not fully meet the anti-counterfeiting needs of the fifth edition of RMB, reduce surface reflection loss, and improve photoelectric conversion. Efficiency, effects of improving stability and reliability

Inactive Publication Date: 2009-04-08
BEIJING UNIV OF POSTS & TELECOMM
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Problems solved by technology

[0002] The fifth edition of renminbi has basically replaced the fourth edition of renminbi, but counterfeit money has emerged, and the level of counterfeiting is getting higher and higher. The technologies used in existing financial instruments, such as magnetism, watermarks, ultraviolet light-induced fluorescence, and color-changing inks, cannot fully meet the needs of the fifth edition. Anti-counterfeiting needs of RMB

Method used

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  • Method for producing 541 nano narrow band-pass photoelectric detector
  • Method for producing 541 nano narrow band-pass photoelectric detector
  • Method for producing 541 nano narrow band-pass photoelectric detector

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specific Embodiment

[0042] Part 1, Fabrication of Silicon Photodiode Chip

[0043] Use N-type, (100) crystal plane, single-sided polishing, resistivity about 4Ωcm, 450 micron thickness, 4-inch dislocation-free silicon epitaxial wafer as the substrate, RCA cleaning with FSI automatic cleaning machine and then drying, 50 per piece A batch is inserted into the quartz boat, pushed into the oxidation furnace and oxidized with chlorine at 1050°C for 120 minutes, and the growth thickness is 7000 ±300 After coming out of the furnace, use a glue coater to spin-coat the negative glue, and perform photolithography on the P-zone window on the photolithography machine. The window area is 3.68×3.68 mm, remove the glue, wash and dry, insert a quartz boat, and push it into the oxidation furnace at 900 ° C. Under dry oxygen oxidation for 30 minutes, the growth thickness is 250 ±50 Implant boron ions on silicon wafers on an ion implanter with an implant energy of 60KeV and an implant dose of 6E14 / cm 2 , ti...

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Abstract

This invention relates to a method for processing 541nm narrow band-pass photo-detector including the following steps: feeding a substrate of N type silicon epitaxial plate into a calcar to grow an oxidation layer to be injected with B ions, sending silicon plates into a LPCVD oven to grow Si3N4 layer, etching zone P leading hole and pressure weld point window, evaporating Al to be counter-etched and alloyed, thinning the back to evaporate Au to be alloyed, scribing it to process 541nm peak value wavelength narrow band-pass filter plates with the ITO film, which is ohm-contacted with a metal tube cap then to be packaged.

Description

technical field [0001] The invention provides a method for making a 541 nanometer narrow bandpass photodetector. technical background [0002] The fifth edition of renminbi has basically replaced the fourth edition of renminbi, but counterfeit money has emerged, and the level of counterfeiting is getting higher and higher. The technologies used in existing financial instruments, such as magnetism, watermarks, ultraviolet light-induced fluorescence, and color-changing inks, cannot fully meet the needs of the fifth edition. RMB anti-counterfeiting needs. [0003] The fifth edition of RMB has a colorless fluorescent anti-counterfeiting identification area hidden in a specific position of the banknote. Using 980-985 nm wavelength and 20-80 mW semiconductor near-infrared laser light source to irradiate the position can generate excitation light with a peak frequency of 541 nm, a half-width of 10-15 nm, and an intensity of 2-4 lux. A photodetector is placed on one side of the ba...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 郭辉江建国黄建明
Owner BEIJING UNIV OF POSTS & TELECOMM
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