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Zno quantum dot based deep ultraviolet sensor and preparation method

A technology of quantum dots and sensors, which is applied in the field of ZnO quantum dot-based deep ultraviolet sensors and preparation, achieves the effects of simple production device, simple technical process and low cost

Active Publication Date: 2017-05-31
YANGZHOU UNIV
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Problems solved by technology

However, designing an efficient Schottky barrier in devices remains a daunting task

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  • Zno quantum dot based deep ultraviolet sensor and preparation method
  • Zno quantum dot based deep ultraviolet sensor and preparation method
  • Zno quantum dot based deep ultraviolet sensor and preparation method

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Embodiment Construction

[0021] Technical idea of ​​the present invention is:

[0022] Using the ZnO quantum dot network as a structural module to construct a UV detection device, it is hoped that the junction barrier between quantum dots can be used to improve the speed of UV photoelectric response. In addition, ZnO quantum dots have two other advantages as a building block: 1. Ultra-small quantum dots have a strong quantum size effect, and their band gap is greatly broadened, which can further narrow the wavelength of the response spectrum and improve the spectral selection of detection , and because the deeper the ultraviolet radiation has the greater harm to the biological system, the deep ultraviolet detection is more meaningful; 2. The quantum dot has a large absorption coefficient and a high specific surface area, which can further improve the light absorption of the device Active area for efficiency and photoelectric response.

[0023] The positive side is that the specific preparation scheme...

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Abstract

The invention relates to a ZnO quantum dot-based deep ultraviolet sensor and a preparation method. In the present invention, the superfine ZnO quantum dot network structure is used as the active layer of photoelectric response, and the process is through the preparation of the ZnO quantum dots and then to the preparation process of the ZnO quantum dot-based deep ultraviolet sensor. The invention solves the defects that the switch of photocurrent based on the oxygen adsorption and desorption on the surface of ZnO is very slow and it is difficult to design an effective Schottky barrier in the device. The present invention adopts a simple and low-cost self-assembly process to design a new deep ultraviolet detection device based on ZnO quantum dots, which exhibits high spectral selectivity, stable optical switching behavior, high photocurrent responsivity and fast Response speed, with remarkable, fast and stable photocurrent switching characteristics: the photocurrent switch ratio is greater than 103, and the photocurrent rise and decay times are less than 1s, which improves the response speed of the UV detector.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a ZnO quantum dot-based deep ultraviolet sensor and a preparation method. Background technique [0002] Ultraviolet (UV) sensor devices have a wide range of demands in the industrial and scientific fields, such as the monitoring of high-temperature flames, missile plumes, ambient light detection, optical switches and optical communications, etc., have direct application prospects. Zinc oxide (ZnO) is a typical wide bandgap semiconductor (E g ~3.4eV), which has better exciton binding energy (E b ~60meV), is one of the ideal materials for developing UV detectors. In recent years, one-dimensional nanobuilding blocks such as ZnO nanowires, nanorods, and nanoribbons have been widely used to design UV detectors due to the natural electron transport channels and large specific surface area of ​​one-dimensional nanomaterials. However, in one-dimensional nano-UV detectors with ohmic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 许小勇庄申栋冯兵李鹤周悦羚周钢胡经国
Owner YANGZHOU UNIV
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