Sensing chip

A technology for sensing chips and nanostructures, applied in measurement devices, material analysis through optical means, instruments, etc., can solve problems such as insufficient sensitivity

Inactive Publication Date: 2017-01-18
IND TECH RES INST
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with the current LSPR chip and ELISA method, its sensitivity is still insufficient

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sensing chip
  • Sensing chip
  • Sensing chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Formation of gold / alumina / gold nanostructures (MIM) on silicon oxide substrates such as Figure 5A As shown, and a single-layer gold nanostructure was formed on another silicon oxide substrate as Figure 5B Shown, and compare the distribution of the hot spots 61 of the two structures. Figure 5A In the nanostructure, the thickness of the bottom metal layer (gold) is 10nm, the thickness of the middle dielectric layer (alumina) is 20nm, and the thickness of the top metal layer (gold) is 40nm. Figure 5A The width of the nanostructure is 200nm, and the arrangement period is 650nm. Figure 5B The thickness of the monolayer gold nanostructure is 70 nm. Figure 5B The width of the nanostructure is 200nm, and the arrangement period is 650nm.

[0045] Figure 5B The hot spot of the single-layer metal nanostructure is mainly located at the junction tip of the silicon oxide substrate and the gold nanostructure. Figure 5A In addition to the distribution of the hot spot of th...

Embodiment 2

[0049] Get the MIM nanostructure of embodiment 1, adjust its period and simulate the surface plasmon resonance spectrum, such as Figure 7A shown. The simulation results show that when the period is larger, the full width at half maximum of the resonance peak is smaller. This is because when the period is larger, the surface plasmon resonance mode (LSPR mode) of the structural unit and the diffraction of the periodic structure are caused. The two conditions of Rayleigh anomaly mode are close to each other and are coupled, such as Figure 7B shown. Depend on Figure 7B It can be seen that the optimal period of the above-mentioned nanostructure is about 650 nm.

Embodiment 3

[0051] The spectral changes of the nanostructures in the two environments of air (n=1) and water (n=1.33) are as follows: Figure 8 As shown, it can be seen from the figure that the spectrum has two characteristic peaks (mode1, mode2), and the sensitivity of mode1 to the change of the environmental refractive index is higher than that of mode2. Figure 9 The thickness of the top metal layer (15nm) and bottom metal layer (15nm) of the nanostructure is fixed in air, and the thickness of the middle dielectric layer of the nanostructure is changed to confirm the influence of the thickness of the middle dielectric layer on the characteristic spectrum. It can be seen from the simulation results that the thicker the dielectric layer is, the closer the distance between the two characteristic spectra will be, and they will even overlap in the end. Conversely, when the thickness of the dielectric layer is thinner, the spectral separation is caused by the strong surface plasmon coupling ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a sensing chip. The sensing chip comprises a substrate, and a plurality of nano structures; the nano structures are arranged on the substrate periodically; each of the nano structures comprises a bottom metal layer arranged on the substrate, a middle dielectric layer arranged on the bottom metal layer, and a top metal layer arranged on the middle dielectric layer; and the area of each bottom metal layer is larger than that of a corresponding top metal layer.

Description

technical field [0001] The present invention relates to sensing chips, and in particular to the manner in which their nanostructures are formed. Background technique [0002] In biomedical testing, whether it is food safety or cancer screening, enzyme immunoassay (Enzyme-linked immunosorbent assay, ELISA) is currently the main method. Although the current ELISA technology has the advantages of high sensitivity, the reagents (ELISA kits) used are expensive, the detection steps are cumbersome and time-consuming, and the target analyte needs to be attached to a biological label (such as a fluorescent molecule) or an enzyme for presentation. Fluorescent molecules will not only interfere with the activity of target molecules, but most fluorescent molecules will also suffer from photobleaching or blinking, which makes ELISA easy to produce errors when measuring low concentrations. [0003] The chip based on the principle of localized surface plasmon resonance (LSPR) can achieve t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/552
Inventor 林鼎晸陈怡萍陈品诚
Owner IND TECH RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products