Precise vertical temperature-difference gradient condensation single crystal growth device and method thereof

A gradient condensation and crystal growth technology, applied in the directions of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of crystal growth defects, inability to precisely control temperature changes, large temperature gradient, etc., to achieve crystal quality and yield. The effect of increased rate and more precise control of melting temperature
CN1865527AInactive Publication Date: 2006-11-22长治虹源科技晶片技术有限公司
0 Cites 35 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
长治虹源科技晶片技术有限公司
Publication Date
2006-11-22
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
Patent Text Reader

Abstract

The invention discloses a growing device and method of precise vertical differential temperature gradient condensate monocrystal, which is characterized by the following: the heating element of heating device distributes evenly around the peripheral of copple, which is started from copple conversing point; the heating element attaches and distributes evenly along copple cone until covering the mouth position of copple, which makes temperature detecting couple touches quartz container wall through heating element. The invention improves eh quality and production rate of crystal, which is fit for III-V or II-IV composition semiconductor material.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to a high-quality single crystal growth preparation method, more specifically, the present invention is used for III-V or II-IV compound semiconductor materials, such as large-diameter gallium arsenide, indium phosphide, indium arsenide, phosphide A vertical temperature gradient condensation single crystal growth preparation method for gallium, indium antimonide, cadmium selenide, zinc telluride, germanium and silicon, etc. is disclosed. Background technique

[0002] The common VGF (Vertical Temperature Gradient Condensation) crystal growth method is to package the PBN (hot-pressed boron nitride) crucible containing polycrystalline materials in a quartz vessel, and then vertically put it into multiple temperature zones (generally there are three temperature zones, Four temperature zones, six temperature zones, etc.) VGF furnace growth. Ordinary VGF crystal growth furnace see figure 1 shown. The quartz vessel is a contai...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More