Precise vertical temperature-difference gradient condensation single crystal growth device and method thereof

A gradient condensation and crystal growth technology, applied in the directions of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of crystal growth defects, inability to precisely control temperature changes, large temperature gradient, etc., to achieve crystal quality and yield. The effect of increased rate and more precise control of melting temperature

Inactive Publication Date: 2006-11-22
长治虹源科技晶片技术有限公司
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Problems solved by technology

[0003] The main problem of this method is: along the vertical direction of the crystal growth crucible, the temperature gradient amplitude is relatively large, so that the difference between the upper limit temperature and the lower limit temperature of the temperature control range in the temperature range during the single crystal growth process is relatively large, which is n

Method used

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  • Precise vertical temperature-difference gradient condensation single crystal growth device and method thereof
  • Precise vertical temperature-difference gradient condensation single crystal growth device and method thereof

Examples

Experimental program
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Effect test

Embodiment

[0018] Embodiment 1: Growth of an undoped 4-inch gallium arsenide single crystal

[0019] Add 5.5 kg of gallium arsenide polycrystalline raw materials, control temperature zone I at 1220°C, temperature zone II at 1225°C, and temperature zone III and IV at 1260°C. The crystal growth period (heating, melting, growth, annealing treatment, etc.) is five days. Check the crystal after taking out the single crystal, the length is 100mm, and there is no visible crystal defect; the EDP value after KOH corrosion for 5 minutes at 400°C is 2000 / cm 2 About, compared with the crystal EPD of the usual VGF growth method (about 5000 / cm 2 ) is 60% lower. The single crystals are of very good quality.

[0020] Example 2: Iron-doped 4-inch indium phosphide single crystal growth

[0021] Add 4.8 kg of indium phosphide polycrystalline reaction material containing a small amount of high-purity iron, and add a small amount of red phosphorus to protect the reaction atmosphere. The temperature zone...

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Abstract

The invention discloses a growing device and method of precise vertical differential temperature gradient condensate monocrystal, which is characterized by the following: the heating element of heating device distributes evenly around the peripheral of copple, which is started from copple conversing point; the heating element attaches and distributes evenly along copple cone until covering the mouth position of copple, which makes temperature detecting couple touches quartz container wall through heating element. The invention improves eh quality and production rate of crystal, which is fit for III-V or II-IV composition semiconductor material.

Description

technical field [0001] The present invention relates to a high-quality single crystal growth preparation method, more specifically, the present invention is used for III-V or II-IV compound semiconductor materials, such as large-diameter gallium arsenide, indium phosphide, indium arsenide, phosphide A vertical temperature gradient condensation single crystal growth preparation method for gallium, indium antimonide, cadmium selenide, zinc telluride, germanium and silicon, etc. is disclosed. Background technique [0002] The common VGF (Vertical Temperature Gradient Condensation) crystal growth method is to package the PBN (hot-pressed boron nitride) crucible containing polycrystalline materials in a quartz vessel, and then vertically put it into multiple temperature zones (generally there are three temperature zones, Four temperature zones, six temperature zones, etc.) VGF furnace growth. Ordinary VGF crystal growth furnace see figure 1 shown. The quartz vessel is a contai...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B29/40C30B29/48
Inventor 罗建国
Owner 长治虹源科技晶片技术有限公司
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