Precise vertical temperature-difference gradient condensation single crystal growth device and method thereof

Abstract

The invention discloses a growing device and method of precise vertical differential temperature gradient condensate monocrystal, which is characterized by the following: the heating element of heating device distributes evenly around the peripheral of copple, which is started from copple conversing point; the heating element attaches and distributes evenly along copple cone until covering the mouth position of copple, which makes temperature detecting couple touches quartz container wall through heating element. The invention improves eh quality and production rate of crystal, which is fit for III-V or II-IV composition semiconductor material.

Description

technical field [0001] The present invention relates to a high-quality single crystal growth preparation method, more specifically, the present invention is used for III-V or II-IV compound semiconductor materials, such as large-diameter gallium arsenide, indium phosphide, indium arsenide, phosphide A vertical temperature gradient condensation single crystal growth preparation method for gallium, indium antimonide, cadmium selenide, zinc telluride, germanium and silicon, etc. is disclosed. Background technique [0002] The common VGF (Vertical Temperature Gradient Condensation) crystal growth method is to package the PBN (hot-pressed boron nitride) crucible containing polycrystalline materials in a quartz vessel, and then vertically put it into multiple temperature zones (generally there are three temperature zones, Four temperature zones, six temperature zones, etc.) VGF furnace growth. Ordinary VGF crystal growth furnace see figure 1 shown. The quartz vessel is a contai...

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Problems solved by technology

[0003] The main problem of this method is: along the vertical direction of the crystal growth crucible, the temperature gradient amplitude is relatively large, so that the difference between the upper limit temperature and the lower limit temperature of the temperature control range in the temperature range during the single crystal growth process is relatively large, which is not conducive to obtaining high-quality Single crystal, especially: in the region where the seed crystal and the PBN crucible conical transition, because the heating element is far away from the melt, the temperature change in these regions cannot be precisely controlled, and it is very easy to cause crystal growth defects (polycrystal, twins, crystals, etc.) dislocation, etc.)

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