CZ method silicon single crystal growth furnace quartz crucible carbon protection crucible and manufacturing process thereof

Abstract

The invention relates to a CZ method silicon single crystal growth furnace quartz crucible carbon protection crucible and a manufacturing process thereof. The CZ method silicon single crystal growth furnace quartz crucible carbon protection crucible comprises an upper crucible edge, a lower crucible edge and a crucible support, wherein the upper crucible edge and the lower crucible edge comprise green bodies and matrix carbon, the surface is provided with a silicon carbide coating, each green body is formed by the superposition of two-dimensional carbon fiber fabrics or is formed by a quasi-three-dimensional punched carbon fiber felt body, and the weight is not lower than 40 percent of weight of the protection crucible; the matrix carbon comprises carbon resin and chemical vapor depositioncarbon, wherein the content of the chemical vapor deposition carbon is not higher than 30 percent of total weight of the product; the density of materials of the upper crucible edge and the lower crucible edge is higher than or equal to 1.3g / cm <3>; holes with the diameters ranging from 5 to 30 mm are uniformly distributed on the upper crucible edge and the lower crucible edge, the walls of the holes and the inner surfaces of the crucible edges are provided with silicon carbide coatings, and the thickness ranges from 10 to 100 mu m; and the crucible support comprises high strength and high purity graphite and surface deposited carbon coatings, the density thereof is higher than or equal to 1.7g / cm <3>, and the thickness of the surface deposited carbon coatings ranges from 10 to 100 mu m.

Description

technical field [0001] The invention relates to a protective crucible of a CZ method silicon single crystal growth furnace and a manufacturing process thereof, in particular to a protective crucible of a CZ method silicon single crystal growth furnace combined with a carbon-carbon composite material and high-strength graphite and a manufacturing process thereof. Background technique [0002] About 85% of semiconductor silicon single crystals are manufactured by the Czochralski method (abbreviated as CZ method). The CZ method silicon single crystal growth process is to put polycrystalline silicon into a quartz crucible, heat and melt, then slightly cool down the molten silicon, give a certain degree of supercooling, and combine a silicon single crystal (called a seed crystal) with a specific crystal orientation with the molten silicon. Bulk silicon contact, by adjusting the temperature of the melt and the upward lifting speed of the seed crystal, when the seed crystal shoulde...

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Problems solved by technology

During use, graphite petals are easily deformed, and the supporting effect gradually decreases; impurities in graphite will contaminate silicon crystals; graphite is brittle, and micro-cracks will occur, which will affect the thermal conductivity and cause instability in the production process; the wall thickness of the graphite crucible , less heat from the heater is conducted to the quartz crucible, resulting in heat loss, slower response speed, and increased energy consumption

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