CZ method silicon single crystal growth furnace quartz crucible carbon protection crucible and manufacturing process thereof

A quartz crucible and silicon single crystal technology, which is applied in the direction of single crystal growth, crystal growth, chemical instruments and methods, etc., can solve the problems of increased energy consumption, slow response speed, and contamination of silicon crystals

Inactive Publication Date: 2010-02-10
HUNAN NANFANG BOYUN NOVEL MATERIAL
View PDF0 Cites 31 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During use, graphite petals are easily deformed, and the supporting effect gradually decreases; impurities in graphite will contaminate silicon crystals; graphite is brittle, and micro-cracks will occur, which will affect the thermal conducti

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • CZ method silicon single crystal growth furnace quartz crucible carbon protection crucible and manufacturing process thereof
  • CZ method silicon single crystal growth furnace quartz crucible carbon protection crucible and manufacturing process thereof
  • CZ method silicon single crystal growth furnace quartz crucible carbon protection crucible and manufacturing process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The embodiment of the quartz crucible and carbon protective crucible of the CZ method silicon single crystal growth furnace of the present invention is composed of the crucible side 2 and the crucible support 4, the wall thickness of the crucible side is 10 mm, and the diameter and height are compatible with the quartz crucible; the material for preparing the crucible side 2 It is a carbon fiber green body reinforced carbon matrix composite material; the carbon fiber green body reinforcement phase is composed of a quasi-three-dimensional needle-punched carbon fiber felt, and its weight material is 60% of the total weight of the crucible side; the carbon matrix is ​​made of resin carbon and chemical vapor deposition Carbon composition, wherein the content of chemical vapor deposited carbon is 25% of the total weight of the crucible side; the material density of the upper crucible side is 1.5g / cm 3 The thickness of the silicon carbide coating on the inner surface of the cr...

Embodiment 2

[0028] The difference from Embodiment 1 is that the crucible side is composed of the upper crucible side 21 and the lower crucible side 22, and the crucible side is processed with uniformly arranged through holes with a diameter of 15 mm. The green body of the crucible side is made of laminated two-dimensional carbon fiber fabrics, and the weight of the green body is 55% of the total weight of the crucible side; the matrix is ​​composed of resin carbon and chemical vapor deposition carbon, and the content of the chemical vapor deposition carbon is 50% of the total weight of the crucible side. 20%. The material density of the upper and lower crucible sides is 1.5g / cm 3 ; The inner surface of the upper and lower crucible sides and the wall of the through hole are coated with silicon carbide, the thickness is 20μm; the density of the crucible support is 1.7g / cm 3 , the thickness of the carbon coating on the surface is 20 μm. The rest are the same as embodiment 1.

[0029] The ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Densityaaaaaaaaaa
Thicknessaaaaaaaaaa
Densityaaaaaaaaaa
Login to view more

Abstract

The invention relates to a CZ method silicon single crystal growth furnace quartz crucible carbon protection crucible and a manufacturing process thereof. The CZ method silicon single crystal growth furnace quartz crucible carbon protection crucible comprises an upper crucible edge, a lower crucible edge and a crucible support, wherein the upper crucible edge and the lower crucible edge comprise green bodies and matrix carbon, the surface is provided with a silicon carbide coating, each green body is formed by the superposition of two-dimensional carbon fiber fabrics or is formed by a quasi-three-dimensional punched carbon fiber felt body, and the weight is not lower than 40 percent of weight of the protection crucible; the matrix carbon comprises carbon resin and chemical vapor depositioncarbon, wherein the content of the chemical vapor deposition carbon is not higher than 30 percent of total weight of the product; the density of materials of the upper crucible edge and the lower crucible edge is higher than or equal to 1.3g/cm <3>; holes with the diameters ranging from 5 to 30 mm are uniformly distributed on the upper crucible edge and the lower crucible edge, the walls of the holes and the inner surfaces of the crucible edges are provided with silicon carbide coatings, and the thickness ranges from 10 to 100 mu m; and the crucible support comprises high strength and high purity graphite and surface deposited carbon coatings, the density thereof is higher than or equal to 1.7g/cm <3>, and the thickness of the surface deposited carbon coatings ranges from 10 to 100 mu m.

Description

technical field [0001] The invention relates to a protective crucible of a CZ method silicon single crystal growth furnace and a manufacturing process thereof, in particular to a protective crucible of a CZ method silicon single crystal growth furnace combined with a carbon-carbon composite material and high-strength graphite and a manufacturing process thereof. Background technique [0002] About 85% of semiconductor silicon single crystals are manufactured by the Czochralski method (abbreviated as CZ method). The CZ method silicon single crystal growth process is to put polycrystalline silicon into a quartz crucible, heat and melt, then slightly cool down the molten silicon, give a certain degree of supercooling, and combine a silicon single crystal (called a seed crystal) with a specific crystal orientation with the molten silicon. Bulk silicon contact, by adjusting the temperature of the melt and the upward lifting speed of the seed crystal, when the seed crystal shoulde...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B15/10C04B35/83
Inventor 蒋建纯萧志英张弛
Owner HUNAN NANFANG BOYUN NOVEL MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap