Czochralski single crystal silicon diameter measurement method

A Czochralski single crystal silicon, diameter measurement technology, applied in single crystal growth, chemical instruments and methods, self-melting liquid pulling method, etc., can solve problems such as large measurement errors, aperture image distortion, and errors

Inactive Publication Date: 2011-05-18
ZHEJIANG COWIN ELECTRONICS
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Problems solved by technology

[0003] 1. Because the coated glass of the observation window on the single crystal furnace often peels off and stains, it will interfere with the results of image preprocessing, especially the interference points near the aperture, which will cause a large measurement error to the traditional measurement algorithm , it is difficult to remove, only through frequent cleaning or replacement of coated glass
[0004] 2. The aperture image during the crystal gro

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  • Czochralski single crystal silicon diameter measurement method
  • Czochralski single crystal silicon diameter measurement method
  • Czochralski single crystal silicon diameter measurement method

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Embodiment Construction

[0041]The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0042] figure 1 It is the overall flow chart of the implementation of the present invention. First, the image is sampled, and then the ROI region of interest is set, and the edge detection and binarization of the ROI region are performed to obtain a single-sided image of the single crystal. According to the clipping between the camera and the liquid surface of the single crystal The angle is mapped from an ellipse to a circle, the aperture point is fitted with Bresenham's sub-pixel circle, and the diameter of the circle is average-filtered to obtain the optimal diameter of the aperture image.

[0043] Specific steps are as follows:

[0044] 1. The resolution of the general industrial analog camera is 720*576. Due to the large difference in the size of the crystals in the isodiameter and seeding stages, two lenses with different focal lengths ...

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Abstract

The invention discloses a Czochralski single crystal silicon diameter measurement method, which comprises the following steps of: synchronously acquiring single crystal growth images by using a camera, performing pre-processing and edge detection on the acquired images of each frame, performing sub-pixel optimal approximation and fit of a circle on the images of each frame by adopting a midpoint Bresenham circle drawing algorithm, and performing mean filter on the basis of a fit arc to acquire the accurate diameter of single crystal. The method can perform the sub-pixel optimal approximation of the circle by adopting the midpoint Bresenham circle drawing algorithm and can accurately calculate the diameter of the single crystal by using the common analog industrial camera so as to achieve the measurement effect of the high-resolution industrial camera.

Description

technical field [0001] The invention belongs to the technical field of on-line real-time measurement of single crystal diameter in Czochralski single crystal method. Background technique [0002] At present, the CCD camera scanning system is the mainstream technology for measuring the diameter of large-diameter Czochralski single crystals. The non-high-definition dual-CCD video camera measurement system using ordinary lenses is the most widely used Czochralski single-crystal CCD video camera measurement system at present. Due to the use of low-resolution image sensors, the dual-CCD camera measurement system has high requirements for image detection algorithms. Currently, the commonly used algorithm processes mainly include image preprocessing, edge detection, arc fitting, and diameter measurement. The Chinese invention patent with the patent number of 200610105331.7 disclosed on August 1, 2007 a method for measuring the diameter of Czochralski single crystal silicon rods ba...

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Application Information

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IPC IPC(8): C30B15/26
Inventor 郭兵健徐一俊黄笑容万喜增陈功蒋委达
Owner ZHEJIANG COWIN ELECTRONICS
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