Polycrystalline synthesis and single-crystal growth method for germanium zinc phosphide

A technology of germanium zinc phosphide and growth method, applied in the direction of single crystal growth, single crystal growth, polycrystalline material growth, etc., can solve the problems of difficult to discharge impurities, low synthesis rate, etc., to ensure consistency, high synthesis rate, high purity effect

Inactive Publication Date: 2008-08-06
HARBIN INST OF TECH
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  • Application Information

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Problems solved by technology

[0005] In order to solve the problem of low synthesis rate in the current synthesis method of germanium zinc phosphide polycrystal, and the problem that impurities are not easily discharged i

Method used

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  • Polycrystalline synthesis and single-crystal growth method for germanium zinc phosphide

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specific Embodiment approach 1

[0014] Specific embodiment one: the method for the polycrystalline synthesis of the zinc germanium phosphide of the present embodiment is carried out according to the following steps: one, select the zinc, germanium, phosphorus that the purity is more than 99.999% to be 1: 1: 2~2.005 by molar ratio The ratio is quantitative, put the reactants into the synthesis boat, place the synthesis boat in the quartz tube to vacuum seal, then put the quartz tube into the horizontal synthesis furnace, make the synthesis boat containing phosphorus in the low temperature area of ​​the horizontal synthesis furnace, place The synthesis boat of zinc and germanium is located in the high-temperature zone of the horizontal synthesis furnace; 2. Raise the temperature so that the temperature in the low-temperature zone is 40-600°C, and the temperature in the high-temperature zone is 900-1080°C, keep the temperature for more than 3 hours, and then cool down to room temperature; that is, phosphating Ge...

specific Embodiment approach 2

[0015] Embodiment 2: The difference between this embodiment and Embodiment 1 is that in step 2, the temperature is raised so that the temperature in the low-temperature zone is 440-560° C., and the temperature in the high-temperature zone is 930-1050° C. Other steps and parameters are the same as those in Embodiment 1.

specific Embodiment approach 3

[0016] Embodiment 3: The difference between this embodiment and Embodiment 1 is that in step 2, the temperature is raised so that the temperature in the low-temperature zone is 480-520°C, and the temperature in the high-temperature zone is 980-1000°C. Other steps and parameters are the same as those in Embodiment 1.

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Abstract

A method for synthesizing poly-crystal and growing single-crystal of zinc germanium phosphide relates to a method for synthesizing and the growing the zinc germanium phosphide. The method solves the problem of low synthesizing rate of the current method for synthesizing the zinc germanium phosphide poly-crystal, and the problem of uneasy to exclude foreign matter of the method for growing the zinc germanium phosphide single-crystal. The synthesis of the zinc germanium phosphide poly-crystal of the invention comprises the following steps: firstly, defining the quantity, secondly, increasing the temperature, namely obtaining the zinc germanium phosphide poly-crystal material; the growth of the zinc germanium phosphide single-crystal protocaryon of the invention has the following steps: firstly, defining the quantity, secondly, increasing the temperature, thirdly, decreasing the copple and reducing the temperature, namely obtaining the zinc germanium phosphide single-crystal, the growth of the zinc germanium phosphide single-crystal with seed crystal of the invention has the following steps: firstly, defining the quantity, secondly, increasing the temperature, thirdly, decreasing the copple and reducing the temperature, namely obtaining the zinc germanium phosphide single-crystal. The method of the invention has the advantages that the synthesizing rate of the poly-crystal synthesis is high, the growth of the single-crystal is easy to exclude the foreign matter, and the direction of the crystal is accordant.

Description

technical field [0001] The invention relates to a method for synthesizing and growing zinc germanium phosphide crystals. Background technique [0002] Zinc germanium phosphide, the chemical formula is ZnGeP 2 , its single crystal is a nonlinear optical crystal with superior performance in the mid-to-far infrared band: high nonlinear coefficient, d 36 Reach 75pm / V; wide light transmission band: 0.7-13μm, can achieve phase matching in a wide range of wavelengths, CO 2 Laser, Nd:YAG(Nd:Y 3 Al 5 o 12 ) laser, Ti gem (Ti:Al 2 o 3 ) laser, Ho:Tm:LYF (Ho:Tm:YLiF 4 ) Lasers can be used as pump sources; high thermal conductivity, low thermal lens effect, not easy to cause damage to crystals and optical components; high optical damage threshold. [0003] Due to the excellent performance of germanium zinc phosphide single crystal, using it as a nonlinear dielectric material for optical parametric oscillation, optical parametric amplification, second harmonic, fourth harmonic, e...

Claims

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Application Information

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IPC IPC(8): C30B29/10C30B1/10
Inventor 杨春晖夏士兴王猛
Owner HARBIN INST OF TECH
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