87 results about "Zinc phosphide" patented technology

On the premise of deep hydrodesulfurization, the main problem in diesel fuel's hydrotreatment is to rid the refractory sulfide and hydrogenate polycyclic aromatic hydrocarbon. Loaded nickel phosphide catalyst demonstrates higher hydrodesulfurization activity and better activity stability. However, the traditional nickel phosphide catalyst is prepared by temperature programming of nickel phosphide, so that dispersion degree of active components is low. In the invention, through solid-phase reaction between phosphorous acid ions and nickel ions, bulk phase and loaded nickel phosphide catalyst with higher active component dispersion degree and fine catalytic activity are obtained at low temperature. The invention is applicable to diesel oil hydroprocessing.

A method for synthesizing poly-crystal and growing single-crystal of zinc germanium phosphide relates to a method for synthesizing and the growing the zinc germanium phosphide. The method solves the problem of low synthesizing rate of the current method for synthesizing the zinc germanium phosphide poly-crystal, and the problem of uneasy to exclude foreign matter of the method for growing the zinc germanium phosphide single-crystal. The synthesis of the zinc germanium phosphide poly-crystal of the invention comprises the following steps: firstly, defining the quantity, secondly, increasing the temperature, namely obtaining the zinc germanium phosphide poly-crystal material; the growth of the zinc germanium phosphide single-crystal protocaryon of the invention has the following steps: firstly, defining the quantity, secondly, increasing the temperature, thirdly, decreasing the copple and reducing the temperature, namely obtaining the zinc germanium phosphide single-crystal, the growth of the zinc germanium phosphide single-crystal with seed crystal of the invention has the following steps: firstly, defining the quantity, secondly, increasing the temperature, thirdly, decreasing the copple and reducing the temperature, namely obtaining the zinc germanium phosphide single-crystal. The method of the invention has the advantages that the synthesizing rate of the poly-crystal synthesis is high, the growth of the single-crystal is easy to exclude the foreign matter, and the direction of the crystal is accordant.

The invention provides a novel method for preparing nickel phosphide (Ni12P5) by the low-temperature solvothermal method. The method of the invention is characterized by dissolving anhydrous nickel chloride as a nickel source and sodium hypophosphite as a phosphorus source in a high-boiling-point organic solvent at the room temperature, stirring the materials until the organic solvent is transparent, sealing the organic solvent in a high-pressure kettle and heating up to 140-240 DEG C and reacting for certain time to obtain Ni12P5. The method of the invention is characterized by using a high-boiling point organic substance as the solvent, the reaction conditions are simple and mild and the generated Ni12P5 is the nano-particle with the size being 50nm to 200nm and the specific surface area being larger. The method is favorable for hydrodesulfurization, selective hydrogenation and other catalytic hydrogenation reactions, thus having wider application range.

The invention discloses a method for preparing tetrahedral light-emitting indium phosphide/zinc sulfide core-casing quantum dots. The method comprises the following steps: preparing high-boiling point tris(dialiphatic amido) phosphine, preparing InP quantum dot cores, preparing InP/ZnS core-casing quantum dots and separating the InP/ZnS core-casing quantum dots. Through the use of the high-boiling point tris(dialiphatic amido) phosphine as a phosphorus source, the price is low, the chemical structure is stable, the reaction is mild and safe, and gas is not produced. All reaction precursors are common chemical reagents and low in toxin and safe to store and use. The luminescent color of the InP/ZnS core-casing quantum dots can be precisely controlled simultaneously by the reaction temperature, the ratio of indium halide to the tris(dialiphatic amido) phosphine, the type of the halide and the reaction time, and high fluorescence quantum yield can be ensured.

The disclosure provides a semiconductor laser based on an indium phosphide-base coupled ridge array. The semiconductor laser is formed by processing an indium phosphide-base epitaxial wafer substrateand comprises a quantum well active layer located in the middle of the semiconductor laser for emitting laser light; a N-region structural layer located below the quantum well active layer for providing electrons and restrictions on carriers and light fields; and a P-region structural layer located above the quantum well active layer for providing holes and restrictions on the carriers and the light fields, wherein the P-region structural layer comprises an coupled ridge array consisting of M ridge waveguides, wherein M is greater or equal to 2, the coupled ridge array enables active region output light fields underneath the adjacent ridge waveguides to achieve coherent coupling and enhances the limitation of the ridge waveguide on the light field in the active region, and the laser is prevented from lasing in a multi-transverse mode, so that the output beam quality is higher.

The principles of the present invention are used to reduce the conduction band offset between chalcogenide emitter and pnictide absorber films. Alternatively stated, the present invention provides strategies to more closely match the electron affinity characteristics between the absorber and emitter components. The resultant photovoltaic devices have the potential to have higher efficiency and higher open circuit voltage. The resistance of the resultant junctions would be lower with reduced current leakage. In illustrative modes of practice, the present invention incorporates one or more tuning agents into the emitter layer in order to adjust the electron affinity characteristics, thereby reducing the conduction band offset between the emitter and the absorber. In the case of an n-type emitter such as ZnS or a tertiary compound such as zinc sulfide selenide (optionally doped with Al) or the like, an exemplary tuning agent is Mg when the absorber is a p-type pnictide material such as zinc phosphide or an alloy of zinc phosphide incorporating at least one additional metal in addition to Zn and optionally at least one non-metal in addition to phosphorus. Consequently, photovolotaic devices incorporating such films would demonstrate improved electronic performance.

The invention provides nickel phosphide, a preparation method thereof and a method for producing hydrogen through water electrolysis. The preparation method of the nickel phosphide comprises the following steps: firstly, dissolving a nickel source compound, a phosphorus source compound and acetate into water, so as to obtain a dissolving liquid; secondly, performing electrolytic deposition treatment on the dissolving liquid, so as to obtain the nickel phosphide. The preparation method is simple and practicable, mild in condition, does not need severe conditions of high temperature and high pressure, simple in equipment and operation, low in cost, safe and environmentally friendly, does not produce side products, and is suitable for mass production.

The invention discloses a preparation method of high-purity zinc phosphide, which comprises the following steps of: 1) quartz tube pretreatment; 2) dosing; 3) tube sealing; 4) high-temperature synthesis; and 5) product treatment. According to the invention, high-purity phosphorus and high-purity zinc are directly combined to produce high-purity zinc phosphide, the main reaction process is carried out after the temperature reaches the melting point of zinc, the reaction is actually a steam reaction, and the method is an element direct synthesis method; the requirements for the form of raw materials are not very strict; the raw material is not processed, and the requirement for high purity is met; the pressure in a tube is controlled through temperature control operations such as slow heating, constant temperature, slow cooling and the like; the phosphorus steam pressure in the quartz tube is successfully controlled through length allocation of a heating area and a condensation area for synthesizing a quartz tube, and safe synthesis of a large amount of zinc phosphide is realized; and relatively high yield of a product is realized by controlling the length of the condensation area and the heating area, and the product is applied to the application fields of photoelectric device manufacturing, diffusion sources, nano materials and the like.

The invention discloses a preparation method for a nickel phosphide-nitrogen doped graphite oxide foil composite nano material. Graphite foil, HNO3, H2SO4, ammonium fluoride, thiourea, nickel nitrateand ultrapure water are used as raw materials; and the method is realized by the following steps: graphite oxide foil doped by nitrogen and sulfur atoms is prepared; a hydrothermal synthesis reactionis performed; and washing is performed, and drying is performed. The method disclosed by the invention adopts a hydrothermal method as a preparation process, the raw materials are simple and easy to obtain, the composite material is obtained through the hydrothermal and phosphating processes, the experiment process is simple, the operation is convenient, the large-scale production is easy to realize, and the product can be recovered by 100% during use; the obtained nickel phosphide-nitrogen doped graphite oxide foil has excellent flexibility, a nitrogen element is not only doped on the graphite foil, but also can enter crystal lattices of nickel phosphide, the composite nano material has a very good catalytic effect on electrocatalytic hydrogen evolution, and in the catalytic process, theproduct has good stability and good product uniformity; and in addition, the material is expected to have a good application in aspects of flexible batteries, flexible sensors and the like.

The invention discloses a preparation method of a nickel phosphide microsphere with a multilevel structure, and relates to a preparation method of nickel phosphide. The method aims to solve the technical problem that the existing nickel phosphide is low in tap density. The method comprises the following steps of 1, preparing a precursor by using nickel acetate and urea; 2, putting the precursor into a porcelain boat, and then putting sodium hypophosphite into another porcelain boat, putting the two porcelain boats into a quartz tube together, and continuously pumping argon into the quartz tubefor protection, wherein the porcelain boat containing sodium hypophosphite is placed on the upstream of the air flow, and then heating the quartz tube to 300-400 DEG C, and carrying out heat preservation for 4-6 hours to obtain the nickel phosphide microsphere with the multilevel structure. The nickel phosphide microsphere disclosed by the invention is composed of a nickel phosphide nanosheet with a secondary structure, and the specific surface area of the nickel phosphide microsphere can be improved by utilizing the multilevel structure of the nickel phosphide microsphere, the contact area with an electrolyte is enlarged, the tap density is high, and the volume specific capacity is higher. The preparation method is simple and mild in conditions. The method can be used for manufacturing anegative electrode of a lithium ion battery.

A point rail with the hardened layer on its working surface is disclosed. A technology for hardening its working surface by laser includes such steps as removing oily dirt and rust, baking, coating zinc phosphide paint for blackening it, and using CO2 laser device to harden it. Its advantages are high effect and productivity and easy control.

The invention relates to a preparation method of a Ni-P/nickel phosphide-carbon cloth three-dimensional self-supporting hydrogen evolution electrode material. The invention belongs to the technical field of hydrogen electrode material preparation. The preparation method comprises the following steps: performing hydrothermal reaction on carbon cloth subjected to acid impregnation modification treatment to grow nickel hydroxide; nickel hydroxide is subjected to phosphating treatment, a nickel phosphide-carbon cloth three-dimensional self-supporting material is obtained, then a nickel-phosphorusalloy is electrically deposited on nickel phosphide-carbon cloth, and then the nickel-phosphorus/nickel phosphide-carbon cloth three-dimensional self-supporting electrode material which does not needadditional bonding and is excellent in electro-catalytic hydrogen evolution performance is prepared. The preparation method has the advantages that the technical process is simple, the cost is low, industrial application is easy, the prepared electrode material is rich and intercommunicated in internal pore channels, the conductivity is excellent, the specific surface area is large, the number ofelectrocatalytic active sites is large, and the prepared nickel phosphorus/nickel phosphide-carbon cloth three-dimensional self-supporting electrode material has a good application prospect in the fields of hydrogen energy development and application.

The invention provides an InP (indium phosphide) wafer thinning and polishing method and a chemical corrosion device. The thinning and polishing method comprises the following steps of S1, physical grinding: putting an InP wafer on a grinding disc, physically grinding, and thinning the InP wafer from 300-500mu m to 180-240mu m; S2, chemical corrosion: putting the physically ground InP wafer into the chemical corrosion device, and chemically corroding in concentrated hydrochloric acid; S3, chemical and mechanical polishing: putting the chemically corroded InP wafer on nylon lint cloth, and chemically and mechanically polishing. The thinning and polishing method has the advantages that the high-efficiency thinning and polishing method combining physical grinding and chemical corrosion is proposed; the problems of low rate, more surface scratches, easiness in cracking in the thinning process, and the like in the existing InP wafer thinning and polishing method are solved.

The invention belongs to the technical field of longhorn beetle control and specifically discloses a biological control method of longhorn beetles on trees. The method comprises following steps: applying longhorn beetle larva control agent in the larva stage; applying longhorn beetle pupa control agent in the pupa stage; applying longhorn beetle imago control agent in the imago eclosion hole stage; in this way, the control of longhorn beetles on trees is completed; the longhorn beetle larva control agent is prepared from beauveria bassiana spore liquid, Sichuan azedarach extract, ethanol, and emulsifier; the longhorn beetle pupa control agent is prepared from beauveria bassiana spore liquid, adonis aestivalis extract and ethanol; the longhorn beetle imago control agent is prepared from beauveria bassiana spore liquid, hydrogen peroxide, ethanol and adonis aestivalis extract. According to the method of the invention, beauveria bassiana spore liquid is adopted as biological source for controlling longhorn beetles and the application of toxic chemical pesticides such as zinc phosphide and aluminum phosphide is avoided to reduce environment pollution and protect the ecological environment.

The invention discloses a normal-temperature thick-film zinc phosphide phosphating solution and an experimental method for determining component proportions. The normal-temperature thick-film zinc phosphide phosphating solution comprises 270g/L of Zn(H2PO4), 100g/L of Zn(NO3)2, 0.6g/L of NaNO2, 6g/L of Ni(NO3)2, 10g/L of Ce(NO3)3.6(H2O), 1.5g/L of citric acid, and 1ml/L of an OP emulsifier, wherein the time is 20 minutes; the experimental method for determining component proportions of the normal-temperature thick-film zinc phosphide phosphating solution comprises the following steps: preparing a solution; preparing a phosphating film; and testing performances. Due to the normal-temperature thick-film zinc phosphide phosphating solution comprising the components, the formed phosphating film is dark grey and free of hanging ash; the film is even and continuous and has complete coverage; the relationship between film weight and film thickness is about 1 to 1; the average film weight exceeds 18.13g/L; the obtained phosphating film is a heavy film and is mainly used for preventing stored spare parts from being corroded; and the phosphating film is fine in crystals, small in porosity, good in corrosion resistance, and excellent in film corrosion resistance.

The invention relates to a corrosion liquid and corrosion method for identifying twin crystals on the surface of indium phosphide, and belongs to the field of semiconductor materials. The corrosion liquid for identifying the twin crystals on the surface of the indium phosphide is prepared from, by volume, 30-70% of hydrochloric acid, 0-35% of hydrogen peroxide and 20-70% of acetic acid. The corrosion method for identifying the twin crystals on the surface of the indium phosphide comprises the following steps of (1) soaking an indium phosphide wafer with alcohol; (2) washing the surface of theindium phosphide wafer with deionized water; (3) putting the indium phosphide wafer into the corrosion liquid for soaking; (4) washing the surface of the indium phosphide wafer with deionized water, and drying the indium phosphide wafer; (5) observing the surface of the indium phosphide wafer under a fluorescent lamp and marking twin crystal distribution. The corrosion liquid and the corrosion method are used for identifying the twin crystals on the surface of the indium phosphide, the stability and repeatability are high, and the corrosion speed is controllable.

The invention discloses a preparation method of InP/ZnS (indium phosphide/zinc sulfide) core-shell structure quantum dots. The preparation method comprises a preparation method of InP-series core-shell quantum dots and a synthesis method of the InP/ZnS core-shell structure quantum dots; the preparation method of InP-series core-shell quantum dots is used for preparation of a phosphorus source; the synthesis method is used for preparing an indium precursor with indium iodide as a quantum dot, and the InP/ZnS core-shell structure quantum dots are obtained with P4 as the phosphorus source, dodecanethiol as an S source, 1-octodecene as a stabilizer, oleylamine as a solvent reactant and a ligand as well as zinc oleate as a zinc source of a coated shell structure; centrifugal separation and purification are performed after the reaction is performed; pure InP/ZnS core-shell structure quantum dots are dispersed in octane again; the purified quantum dots are assembled into a QLED (quantum dot light-emitting diode) light emitting device. The preparation method has the advantages as follows: the yield of organic phase synthesized quantum dots is high, the fluorescent yield of a film is high, the quantum dots have uniformly distributed sizes, luminescent spectra are symmetric and narrow, and the cost is greatly reduced by use of the cheap phosphorus source.

The invention provides a preparation method of a supported nickel phosphide catalyst for catalyzing hydrodeoxygenation of phenol and a derivative thereof. The catalyst is supported nickel phosphide. The preparation method comprises the following steps: 1, taking nickel nitrate hexahydrate and dissolving nickel nitrate hexahydrate in deionized water to form a solution; 2, adding a carrier, and performing continuous stirring and heating; 3, weighing urea and adding urea into the obtained solution, and adding concentrated nitric acid; 4, dropwise adding the solution obtained in the step 3 into the suspension solution in the step 2, performing heating after the drop addition is completed, and continuously carrying out a reaction; 5, performing vacuum filtration, performing washing with deionized water until a filtrate is neutral, and performing drying in an oven overnight to obtain a gray-black solid; 6, preparing an acetic acid-sodium acetate buffer solution, then adding sodium hypophosphite and performing continuous stirring and heating, and slowly adding a precursor compound; and 7, performing vacuum filtration after a reaction, performing washing with deionized water until a filtrate is neutral, performing drying in an oven overnight, performing heat treatment in a chemical atmosphere, and then performing cooling annealing to obtain the supported nickel phosphide catalyst. Thecatalyst obtained by the method has good dispersity, small particle size and good HDO activity.

The invention discloses a blue light cadmium-free quantum dot, a preparation method thereof and a quantum dot light-emitting device. The preparation method of the cadmium-free quantum dot comprises the following steps that S1, an indium precursor, a first ligand and a solvent are mixed to prepare an indium-first ligand solution, the first ligand is a long-chain carboxylic acid ligand with the carbon number being 10-18, and the ratio of the amount of substance of carboxylate radicals of the first ligand to the amount of substance of indium ions of the indium precursor is (1: 2)-(5: 2); S2, short-chain zinc salt and a second ligand are added into the indium-first ligand solution to form a cation-mixed ligand solution, and at least part of the short-chain zinc salt and the second ligand are bonded through coordination bonds; S3, a phosphorus precursor is added into the cation-mixed ligand solution to react to obtain a solution containing indium zinc phosphide quantum dots. The InZnP quantum dot core with small size and few defects is prepared by introducing the short-chain zinc salt in the nucleation process of the quantum dot, and the introduction of the Zn element also optimizes theenergy band structure of the quantum dot so that the quantum dot with the luminescence range of 470-490nm is obtained.