Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor laser based on an indium phosphide-base coupled ridge array and preparation method thereof

An indium phosphide-based laser technology, which is applied to the structure of semiconductor lasers, lasers, and optical waveguide semiconductors, can solve the problems of beam quality degradation and enlarging lasers, and achieve simple processing, high quality, and short-circuit prevention.

Inactive Publication Date: 2018-08-03
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF8 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, increasing the ridge width of the laser will also bring about undesirable negative effects while increasing the output power, including the decline in beam quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor laser based on an indium phosphide-base coupled ridge array and preparation method thereof
  • Semiconductor laser based on an indium phosphide-base coupled ridge array and preparation method thereof
  • Semiconductor laser based on an indium phosphide-base coupled ridge array and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0056] The present disclosure also provides a method for manufacturing a semiconductor laser based on an indium phosphide-based coupled ridge array. The semiconductor laser is processed on an indium-phosphide-based epitaxial wafer, figure 2 It is a schematic flow chart of the preparation method, such as figure 2 Shown, described preparation method comprises the following steps:

[0057] Step A: Process the coupling ridge array 29 on the P-region structural layer 20, including:

[0058] Sub-step A1: InP-based epitaxial wafer (such as Figure 5 As shown), the upper side of the P region structure layer is made with a photoresist with a coupling ridge array pattern, and the thickness of the photoresist is 0.5 μm-5 μm, such as Image 6 shown; and

[0059] Sub-step A2: using the photoresist completed in sub-step A1 as a mask, etch away the part of the epitaxial wafer that is not protected by the photoresist, and the etching depth is 200nm-3μm, such as Figure 7 shown.

[0060...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Corrosion depthaaaaaaaaaa
Login to View More

Abstract

The disclosure provides a semiconductor laser based on an indium phosphide-base coupled ridge array. The semiconductor laser is formed by processing an indium phosphide-base epitaxial wafer substrateand comprises a quantum well active layer located in the middle of the semiconductor laser for emitting laser light; a N-region structural layer located below the quantum well active layer for providing electrons and restrictions on carriers and light fields; and a P-region structural layer located above the quantum well active layer for providing holes and restrictions on the carriers and the light fields, wherein the P-region structural layer comprises an coupled ridge array consisting of M ridge waveguides, wherein M is greater or equal to 2, the coupled ridge array enables active region output light fields underneath the adjacent ridge waveguides to achieve coherent coupling and enhances the limitation of the ridge waveguide on the light field in the active region, and the laser is prevented from lasing in a multi-transverse mode, so that the output beam quality is higher.

Description

technical field [0001] The disclosure relates to the technical field of semiconductor optoelectronics, in particular to a semiconductor laser based on an indium phosphide-based coupling ridge array and a preparation method thereof. Background technique [0002] Indium phosphide-based semiconductor lasers have broad market application prospects due to their low cost, good material quality, compatibility with the mature preparation process of lasers used in traditional communications, and easy integration with other devices. At present, the commercial semiconductor lasers on the market are mainly indium phosphide-based semiconductor lasers. [0003] In order to meet the market's increasing demand for the overall performance of semiconductor lasers, laser devices must have high output power and good beam quality at the same time, so that they can be better shaped and utilized in subsequent practical applications. As a main product in the commercial market, the performance of i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01S5/22
CPCH01S5/2205
Inventor 杨涛张中恺许锋
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com